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    Wyświetlanie 1-4 z 4
    Tytuł:
    Synthesis and Characterization of a Water-Soluble Ionic Polyacetylene Derivative
    Autorzy:
    Gal, Y.
    Jin, S.
    Park, J.
    Lim, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398739.pdf
    Data publikacji:
    2016-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.80.L
    73.61.P
    78.20.C
    78.30.J
    Opis:
    A new water-soluble ionic polyacetylene was synthesized by the acid-catalyzed polymerization of 2-ethynylpyridine using acrylic acid. The polymerization proceeded well to give a high yield of polymer. The acetylenic C ≡ C bond stretching (2110 cm¯¹) and acetylenic ≡ C-H bond stretching (3293 cm¯¹) peaks of 2-ethynylpyridine monomer were not seen in the FT-IR spectrum of polymer. The electro-optical and electrical properties of the ionic polyacetylene were measured and discussed. The resulting polymer showed strong maximum at 513 nm in the UV-Visible absorption, which is corresponding to photon energy of 2.42 eV. The energy gap width of polymer was estimated to be of 2.08 eV. It was observed that the electrochemical process of polymer is reproducible in the potential range of -1.80 to 1.60 V vs Ag/AgNO₃. HOMO and LUMO levels of polymer were 4.85 eV and 2.77 eV, respectively.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 4; 642-646
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer
    Autorzy:
    Kim, M.
    Jin, S.
    Choi, H.
    Kim, G.
    Yim, K.
    Kim, S.
    Nam, G.
    Yoon, H.
    Kim, Y.
    Lee, D.
    Kim, Jin
    Kim, Jong
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505152.pdf
    Data publikacji:
    2011-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    81.15.Gh
    Opis:
    A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × $10^{19} cm^{-3}$ was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 6; 875-879
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO Nanorods on Nanofibrous ZnO Seed Layers by Hydrothermal Method and Their Annealing Effects
    Autorzy:
    Yim, K.
    Jeon, S.
    Kim, M.
    Kim, S.
    Nam, G.
    Lee, D.
    Kim, Jin
    Kim, Jong
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1491348.pdf
    Data publikacji:
    2012-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.15.Lm
    78.55.Et
    Opis:
    ZnO nanorods were grown by using the hydrothermal method on p-type Si (100) substrates with nanofibrous ZnO seed layers. Before the ZnO nanorods growth, nanofibrous ZnO seed layers were spin-coated onto the Si substrates. The structural and optical properties of ZnO nanorods were characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. The fibrous ZnO nanorods is possible due to the surface morphology of the nanofibrous ZnO seed layers. To investigate annealing effects of the ZnO nanorods, the post-annealing process was carried out at various temperatures ranging from 300 to 700C under argon conditions. The structural and optical properties of the ZnO nanorods were also affected by the post-annealing treatment.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 1; 214-216
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method
    Autorzy:
    Kim, M.
    Yim, K.
    Kim, S.
    Nam, G.
    Lee, D.
    Kim, Jin
    Kim, Jong
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1491351.pdf
    Data publikacji:
    2012-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.20.Fw
    78.66.Hf
    Opis:
    Indium-doped ZnO thin films were deposited by sol-gel spin-coating method with various In content. The effects of In content on the structural and optical properties of the indium-doped ZnO thin films were investigated by scanning electron microscopy, X-ray diffraction, and UV-visible spectroscopy. The particle-like surface morphology and the crystallinity of the indium-doped ZnO thin films were affected by change in the In content, especially at the In content of 3 at.%. The values of direct band gap were decreased with increase in the In content. The width of localized states in the optical band gap of the indium-doped ZnO thin films were changed with In content and the Urbach energy $(E_{U})$ was changed inversely with optical band gap of the indium-doped ZnO thin films.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 1; 217-220
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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