Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Ivanov, S. V." wg kryterium: Autor

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 18
Tytuł:
Optical Absorption in Periodic InN:In Structures
Autorzy:
Plotnikov, D. S.
Shubina, T. V.
Jmerik, V. N.
Semenov, A. N.
Ivanov, S. V.
Powiązania:
https://bibliotekanauki.pl/articles/2047375.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
71.45.Gm
Opis:
Optical absorption measurements were exploited to study periodic InN:In structures grown by plasma-assisted molecular beam epitaxy with the thickness of the metallic inclusions varied from 2 to 48 monolayers. We demonstrate that the observed higher-energy shift of an effective absorption edge may be due to In depletion of the InN matrix via the coalescence of In into large clusters, accompanied by the respective higher-energy shift of the Mie resonance. The relevant uncertainty in the optical gap of InN is discussed.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 191-196
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Combined (ZnSe/MgS)/ZnCdSe Bragg Reflectors Grown Using ZnS as a Sulphur Source
Autorzy:
Solnyshkov, D. D.
Sorokin, S. V.
Sedova, I. V.
Toropov, A. A.
Ivanov, S. V.
Powiązania:
https://bibliotekanauki.pl/articles/2044540.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.40.Fy
Opis:
We report on MBE growth and study of optical and structural properties of (ZnSe/MgS)/ZnCdSe distributed Bragg reflectors with λ=520 nm and R$\text{}_{max}$=97%. The samples were grown pseudomorphically on GaAs substrate using ZnS as a sulphur source. Scanning electron microscopy, X-ray diffraction, and optical measurements showed good optical and structural characteristics of the Bragg reflectors.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 873-877
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy
Autorzy:
Semenov, A. N.
Solov'ev, V. A.
Meltser, B. Ya.
Lyublinskaya, O. G.
Terent'ev, Ya. V.
Sitnikova, A. A.
Ivanov, S. V.
Powiązania:
https://bibliotekanauki.pl/articles/2044535.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
81.07.Ta
81.15.Hi
81.16.Dn
Opis:
We report on molecular beam epitaxy of InSb insertions in InAs and InAsSb matrices, emitting at wavelengths beyond 4μm. Different growth techniques for deposition of InSb quantum dots in the 1-2 monolayer range of the InSb nominal thickness, namely conventional molecular beam epitaxy and migration enhanced epitaxy, as well as different matrices (InAs and InAsSb) have been employed for increasing the emission wavelength of the InSb/InAs nanostructures. The formation of InSb quantum dots has been studied in situ using reflection high energy electron diffraction and ex situ by using transmission electron microscopy. The peculiarities of In(Ga)AsSb alloys growth and compositional control are also discussed. Bright photoluminescence up to 4.5μm has been observed at 80 K.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 859-865
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cd(Mg)Se Single Layers and CdSe/CdMgSe Heterostructures Grown by Molecular Beam Epitaxy on InAs(001) Substrates
Autorzy:
Kaygorodov, V. A.
Sorokin, V. S.
Sedova, I. V.
Nekrutkina, O. V.
Sorokin, S. V.
Shubina, T. V.
Toropov, A. A.
Ivanov, S. V.
Powiązania:
https://bibliotekanauki.pl/articles/2028799.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
Opis:
We report on molecular beam epitaxy of CdSe/CdMgSe heterostructures on InAs(001) substrates and studies of their optical and structural properties. The CdMgSe energy gap versus composition dependence is determined. The zinc-blende MgSe band-gap energy and optical bowing parameter are estimated to be 4.05 eV and 0.2 eV, respectively. The CdSe quantum wells embedded into CdMgSe barriers demonstrate intense photoluminescence. Effective mass approximation calculations of electron-heavy hole optical transitions in CdSe quantum well are in a good agreement with the experimental data obtained.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 443-450
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy
Autorzy:
Mizerov, A.
Jmerik, V.
Kaibyshev, V.
Komissarova, T.
Masalov, S.
Sitnikova, A.
Ivanov, S.
Powiązania:
https://bibliotekanauki.pl/articles/1811962.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
81.05.Ea
81.15.Hi
Opis:
The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al₂O₃ substrates. Growth kinetics under different growth conditions (substrate temperature, Ga to activated nitrogen flux ratio, etc.) during deposition of GaN(0001) and GaN(0001̅) both by the ammonia-based MBE or plasma-assisted MBE was studied. It was found that atomically smooth surface of 1 μm thick GaN(0001̅) films can be achieved by plasma-assisted MBE at the relatively high substrate temperature $T_S$ ≈ 760°C and Ga to activated nitrogen flux ratio $F_Ga//F_N^\ast$ ≈ 1.8.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1253-1258
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Characterization of ZnO Nanorods Grown by the Ultra-Fast and Low Temperature Hydrothermal Process
Autorzy:
Witkowski, B.
Ivanov, V.
Wachnicki, Ł.
Gierałtowska, S.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1185890.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.-n
61.46.+w
81.10.Dn
77.84.Bw
Opis:
The results of photoluminescence investigations of zinc oxide nanorods are reported. These nanorods grown on undoped silicon substrates were obtained by low temperature and ultra-fast version of a microwave-assisted hydrothermal method. The photoluminescence investigations show very high quality of the obtained material. From photoluminescence studies we conclude the lack of carrier localization effects. The photoluminescence is dominated by band gap edge emission of bound excitonic (donor bound excitons) origin. Thus, the photoluminescence quenching observed at increased temperatures is associated with thermal ionization of shallow donors. From photoluminescence analysis (changes of photoluminescence line width) a strength of exciton-acoustic phonon coupling is evaluated.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1199-1201
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric Polarization of Onsager Fluids. II. Birefringence. 3. Role of Universal Pairwise Interactions
Autorzy:
Prezhdo, V. V.
Tarasova, G. V.
Prezhdo, O. V.
Tyurin, S. A.
Akulova, O. N.
Ivanov, N. I.
Powiązania:
https://bibliotekanauki.pl/articles/1943971.pdf
Data publikacji:
1996-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
31.70.Dk
78.20.Fm
72.80.Jc
Opis:
A comparative analysis of several methods of interpretation of solvent influence on molar Kerr constants of solutes was done. The analysis was based on experimentally determined electro-optical and dielectric properties of binary solutions of organic substances with various polarities, polarizabilities and optical anisotropies. It was found that the role of universal van-der-Waals interactions treated via London-Debye-Keesom potentials was best accounted for by a modified orientational theory of Kerr effect that developed the ansatz of reactive field and local dielectric permittivity. An extrapolation method of determination of gas phase molar Kerr constants of solutes was deduced from the theory.
Źródło:
Acta Physica Polonica A; 1996, 89, 1; 47-59
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric Polarization of Onsager Fluids. I. Dipole Polarization. 3. The Role of Universal Pairwise Interactions
Autorzy:
Prezhdo, V. V.
Tarasova, G. V.
Prezhdo, O. V.
Τyurin, S. A.
Ivanov, N. I.
Kurskaya, T. N.
Powiązania:
https://bibliotekanauki.pl/articles/1933603.pdf
Data publikacji:
1995-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
35.20.My
31.70.Dk
Opis:
A comparative study of the methods of interpretation of solvent influences on electric properties of molecules was conducted based on experimental dielectric properties of dilute solutions of organic substances of various polarity. It was shown that the solvent effect estimated via London-Debye-Keesom pairwise interaction potentials is best accounted for by theories of polarization of condense media which develop the anzatzes of reactive field and local dielectric permittivity.
Źródło:
Acta Physica Polonica A; 1995, 88, 3; 419-434
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mechanism of Radiative Mn$\text{}^{2+}$ Intra-Shell Recombination in Bulk ZnMnS
Autorzy:
Ivanov, V. Yu.
Godlewski, M.
Yatsunenko, S.
Khachapuridze, A.
Li, M. S.
Gołacki, Z.
Powiązania:
https://bibliotekanauki.pl/articles/2027501.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.Fc
76.70.Hb
78.55.Et
Opis:
Origin of a fast component of the photoluminescence decay of Mn$\text{}^{2+}$ intra-shell $\text{}^{4}$T$\text{}_{1}$ → $\text{}^{6}$A$\text{}_{1}$ transition is discussed based on the results of photoluminescence, photoluminescence kinetics and optically detected magnetic resonance experiments performed for bulk ZnMnS samples with about 1% Mn fraction. It is demonstrated that a fast component of the photoluminescence decay, reported previously for quantum dot structure and related to quantum confinement effects, is also observed in bulk samples and is related by us to very efficient spin cross-relaxation effects.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 351-355
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effective Green Semiconductor Lasers with Multiple CdSe/ZnSe QD Active Region for Electron Beam Pumping
Autorzy:
Gronin, S.
Sorokin, S.
Sedova, I.
Kop'ev, P.
Ivanov, S.
Zverev, M.
Gamov, N.
Peregoudov, D.
Studionov, V.
Powiązania:
https://bibliotekanauki.pl/articles/1811929.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.67.Hc
Opis:
The characteristics of ZnSe-based electron beam pumped semiconductor lasers are presented in detail. The laser structures consist of a 0.6 μm thick superlattice waveguide centered with ten equidistantly placed CdSe/ZnSe quantum dot active layers. The maximum light output pulse power of 12 W per facet at room temperature along with an extremely high quantum efficiency of ≈8.5% were obtained at an electron beam pumping energy of 23 keV (the laser wavelength is of 542 nm). The calculations of a spatial distribution of non-equilibrium carrier concentration within the semiconductor structures under electron beam pumping are presented. The possible ways of further improvement of laser efficiency are discussed.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1115-1122
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates
Autorzy:
Miasojedovas, S.
Juršėnas, S.
Kurilčik, G.
Žukauskas, A.
Ivanov, V. Yu.
Godlewski, M.
Leszczyński, M.
Perlin, P.
Suski, T.
Powiązania:
https://bibliotekanauki.pl/articles/2038288.pdf
Data publikacji:
2004-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.45.+h
78.47.+p
78.67.De
Opis:
We report on high-excitation luminescence spectroscopy in In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures
Źródło:
Acta Physica Polonica A; 2004, 106, 2; 273-279
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures
Autorzy:
Ivanov, V.
Godlewski, M.
Miasojedovas, S.
Juršėnas, S.
Kazlauskas, K.
Žukauskas, A.
Skierbiszewski, C.
Siekacz, M.
Leszczyński, M.
Perlin, P.
Suski, T.
Grzegory, I.
Powiązania:
https://bibliotekanauki.pl/articles/1179597.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:
We report on photoluminescence characterization of InGaN based laser structures grown by homoepitaxial radio frequency plasma-assisted molecular beam epitaxy. Owing to Si doped barriers, the structures show a negligible impact of the built-in electric field, which was proved by excitation intensity dependent and quantum well width dependent luminescence experiments. Relatively low variation in band potential due to inhomogeneous distribution of In was quantitatively estimated from the photoluminescence temperature behavior using Monte Carlo simulation of in-plane carrier hopping and optically detected cyclotron resonance experiments. Efficient stimulated emission with a low threshold for optically pumped laser structures was observed.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 225-229
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency
Autorzy:
Shevchenko, E.
Toropov, A.
Nechaev, D.
Jmerik, V.
Shubina, T.
Ivanov, S.
Yagovkina, M.
Pozina, G.
Bergman, J.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1376069.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.De
78.55.Cr
71.35.-y
78.66.-w
Opis:
We report on optical studies of exciton localization and recombination kinetics in two single 2.2 nm thick $Al_{x}Ga_{1-x}N$/$Al_{x+0.1}Ga_{0.9-x}N$ quantum well structures (x=0.55 and 0.6) grown by plasma assisted molecular beam epitaxy on a c-sapphire substrate. Strong localization potential inherent for both the quantum well and barrier regions results in merging of the quantum well and barrier emission spectra into a single broad line centered at 285 nm (x=0.55) and 275 nm (x=0.6). Time-resolved photoluminescence measurements revealed surprising temperature stability of the photoluminescence decay time constant ( ≈ 400 ps) relevant to the recombination of the quantum well localized excitons. This observation implies nearly constant quantum efficiency of the quantum well emission in the whole range from 4.6 to 300 K.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1140-1142
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Origin of Ultrafast Component of Photoluminescence Decay in Nanostructures Doped with Transition Metal or Rare-Earth Ions
Autorzy:
Godlewski, M.
Yatsunenko, S.
Ivanov, V. Yu.
Khachapuridze, A.
Świątek, K.
Goldys, E. M.
Phillips, M. R.
Klar, P. J.
Heimbrodt, W.
Powiązania:
https://bibliotekanauki.pl/articles/2041630.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.Fc
76.70.Hb
78.55.Et
Opis:
Bulk samples, layers, quantum well, and quantum dot structures of II-Mn-VI samples all show coexistence of slow and fast components of Mn$\text{}^{2+}$ photoluminescence decay. Thus, fast photoluminescence decay cannot be related to low dimensionality of a host material. This also means that the model of the so-called quantum confined atom is incorrect. Based on the results of time-resolved photoluminescence and optically detected magnetic resonance investigations we relate the observed lifetime decrease in Mn$\text{}^{2+}$ intra-shell transition to spin dependent magnetic interactions between localized spins of Mn$\text{}^{2+}$ ions and between Mn$\text{}^{2+}$ ions and spins/magnetic moments of free carriers. The latter mechanism is enhanced in nanostructures.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 65-74
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magneto-Optical Studies of Narrow Band-Gap Heterostructures with Type II Quantum Dots InSb in an InAs Matrix
Autorzy:
Mukhin, M.
Terent'ev, Ya.
Golub, L.
Nestoklon, M.
Meltser, B.
Semenov, A.
Solov'ev, V.
Sitnikova, A.
Toropov, A.
Ivanov, S.
Powiązania:
https://bibliotekanauki.pl/articles/1492858.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.75.-c
71.70.Ej
78.55.Cr
78.67.Hc
78.20.Ls
75.40.Mg
Opis:
Magneto-optical properties of type II heterostructures with InSb/InAs quantum dots has been studied at external magnetic field applied in the Faraday geometry. The emission polarization degree can be changed in the range from 100% σ-minus to 10% σ-plus due to excitation intensity and temperature variation. The detailed calculation of the band structure within a tight-binding approximation is presented. The simulation of the experimental data reveals that the oscillator strength of the optical transitions involving electrons with the spin oriented along and opposite to the magnetic field vector differs by approximately 1.8 times in the heterostructures under study.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 868-869
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 18

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies