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Wyświetlanie 1-7 z 7
Tytuł:
Effect of Lutetium Co-Doping on the Main Dosimetric Peak of YAP:Mn²⁺ Thermoluminescent Detectors
Autorzy:
Zhydachevskyy, Ya.
Głowacki, M.
Martynyuk, N.
Ubizskii, S.
Berkowski, M.
Suchocki, A.
Powiązania:
https://bibliotekanauki.pl/articles/1030950.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Hx
Opis:
An effect of lutetium co-doping on photoluminescent and thermoluminescent properties of the Mn²⁺-doped (Lu-Y)AP crystals (with Lu content from 0 to 20% with respect to Y) grown by the Czochralski technique has been studied. It was found that the maximum of the thermoluminescent peak at 200°C is shifted towards higher temperatures at Lu content more than 5%. At the same time the position of the second thermoluminescent peak near 350°C remains unchanged. The observed changes in the thermoluminescent peak position are discussed in terms of the point defects of the material.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 973-976
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Czochralski Growth and Optical Properties οf $(Lu_{x}Gd_{1-x})_2SiO_5$ Solid Solution Crystals Single Doped with $Sm^{3+}$ and $~Dy^{3+}$
Autorzy:
Ryba-Romanowski, W.
Strzęp, A.
Głowacki, M.
Lisiecki, R.
Solarz, P.
Domagala, J.
Powiązania:
https://bibliotekanauki.pl/articles/1399472.pdf
Data publikacji:
2013-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Rz
42.70.Hj
78.40.-q
78.55.Fv
Opis:
Solid solution crystals $(Lu_{x}Gd_{1-x})_2SiO_5$ single doped with $Sm^{3+}$ and $Dy^{3+}$ were grown by the Czochralski method. Segregation coefficients Lu/Gd, melting temperatures and structures of solid solution crystals were determined for 0.15 ≤ x ≤ 0.8. It was found that for x ≥ 0.17 the crystals belong to the monoclinic system within a space group C2/c and their melting temperature diminishes monotonously from 1990C to 1780C when x decreases from 0.8 to 0.15. Disparity of ionic radii of $Lu^{3+}$ and $Gd^{3+}$ induces structural disorder that brings about an inhomogeneous broadening of spectral lines in absorption and emission spectra of incorporated luminescent $Sm^{3+}$ and $Dy^{3+}$ ions. Optical properties of obtained crystals were determined based on results of measurement of absorption and emission spectra and luminescence decay curves. Spectroscopic investigation revealed that $Sm^{3+}$ doped crystals show intense emission distributed in the visible-near infrared region with the most intense band centred at 605 nm and characterized by a branching ratio of 0.43. Emission spectrum of $Dy^{3+}$ doped crystals is dominated by a band centred at 575 nm and characterized by a branching ratio of 0.58. It has been concluded that the systems under study are potential laser materials able to generate visible emission upon GaN/InGaN laser diode pumping.
Źródło:
Acta Physica Polonica A; 2013, 124, 2; 321-328
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence and thermoluminescence of the oxygen-deficient YAG, YAP, and YAM phosphors
Autorzy:
Zhydachevskyy, Ya.
Kamińska, I.
Glowacki, M.
Kilian, A.
Ubizskii, S.
Bilski, P.
Berkowski, M.
Fronc, K.
Elbaum, D.
Suchocki, A.
Powiązania:
https://bibliotekanauki.pl/articles/1052780.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Hx
Opis:
Photoluminescence and thermoluminescence of the oxygen-deficient Y₃Al₅O₁₂ (YAG), YAlO₃ (YAP) and Y₄Al₂O₉ (YAM) ceramics has been studied. Corresponding ceramic samples prepared by the same way however in oxidizing conditions (in air) were studied for comparison. The observed luminescent properties of the materials are related to the F-type centers created on the basis of oxygen vacancies, antisite (Y_{Al}) defects and uncontrolled Tb³⁺ impurity ions.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 977-980
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence, Reflectivity and Raman Investigations of Nanocrystallites in Luminescent Porous Silicon
Autorzy:
Bała, W.
Głowacki, G.
Łukasiak, Z.
Drozdowski, M.
Kozielski, M.
Nossarzewska-Orłowska, E.
Brzozowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1876076.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
78.66.-w
Opis:
Raman scattering, reflectivity and photoluminescence measurements of the porous silicon layers prepared on (001) p/p$\text{}^{+}$ silicon epitaxial wafers by anodization method are presented. We have studied dependence of the frequency shift and halfwidth of LO mode in Raman spectra and shift of the luminescence peak in photoluminescence spectra vs. anodization conditions.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 445-448
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Analysis of Zn$\text{}_{1-x}$Mg$\text{}_{x}$Se Layers Grown on GaAs and ZnTe Substrates
Autorzy:
Renucci, M. A.
Frandon, J.
Głowacki, G.
Gapiński, A.
Rozpłoch, F.
Bała, W.
Powiązania:
https://bibliotekanauki.pl/articles/1952686.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.-j
Opis:
A study of the Raman scattering in Zn$\text{}_{1-x}$Mg$\text{}_{x}$Se (0 ≤ x ≤ 0.4) epilayers grown by molecular beam epitaxy on (100) GaAs and (111)$\text{}_{Zn}$ ZnTe substrates has been performed. Two kinds of longitudinal optical phonon modes (LO$\text{}_{Zn-Se}$ and LO$\text{}_{Mg-Se}$) were observed under excitation of the Ar$\text{}^{+}$ and Kr$\text{}^{+}$ laser lines at room temperature, whose frequencies and intensities depend characteristically on the Mg content.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1065-1069
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
D.C. Conductivity of Polymer Composites with (BEDT-TTF)$\text{}_{2}$I$\text{}_{3}$ Superconductor
Autorzy:
Ulański, J.
Jeszka, J. K.
Polanowski, P.
Głowacki, I.
Kryszewski, M.
Staerk, D.
Helberg, H.
Powiązania:
https://bibliotekanauki.pl/articles/1933406.pdf
Data publikacji:
1995-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ph
81.20.Ti
Opis:
Electrical properties of conducting reticulate doped polymeric films containing BEDT-TTF iodide crystalline network were investigated. Conditions of preparation of this kind of films i.e. time of doping by iodine vapours and time and temperature of annealing and their influence on transformation of the BEDT-TTF iodide crystallites into superconducting phase are discussed.
Źródło:
Acta Physica Polonica A; 1995, 87, 4-5; 899-903
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Superconducting and Microstructural Properties of (Mg+2B)+MgB$\text{}_{2}$/Cu Wires Obtained by High Gas Pressure Technology
Autorzy:
Kario, A.
Morawski, A.
Głowacki, B. A.
Łada, T.
Smaga, M.
Diduszko, R.
Kolesnikov, D.
Zaleski, A. J.
Kondrat, A.
Gajda, D.
Powiązania:
https://bibliotekanauki.pl/articles/2047331.pdf
Data publikacji:
2007-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.71.Mn
Opis:
In order to improve the overall critical current characteristics of Cu sheathed in situ MgB$\text{}_{2}$ wires a special architecture of the wire, and processing parameters were used. The study presents the influence of the ex situ MgB$\text{}_{2}$ chemical barrier between ex situ core and Cu, suppressing the reaction of Cu with Mg. Wires, doped with 10 at.% SiC of 18 nm average grain size, were fabricated from MgH$\text{}_{2}$ and B or from Mg and B powders, using the powder-in-tube method. The methods of rotary swaging or drawing were used as the alternating wire-forming processes. The samples were annealed under high Ar gas pressure (hot isostatic pressing) at 750ºC and 1.0 GPa for 15 and 30 min. A significant difference in Cu distribution across the wires for a long and short time of sintering was observed. The formation of microstructure in the powder-in-tube process and the relationship between the microstructure and critical current density J$\text{}_{c}$ values, are discussed in this paper.
Źródło:
Acta Physica Polonica A; 2007, 111, 5; 693-703
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-7 z 7

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