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Wyszukujesz frazę "Domagała, J. Z." wg kryterium: Autor

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    Tytuł:
    Magnetic Properties of Short Period InGaMnAs/InGaAs Superlattices
    Autorzy:
    Sadowski, J.
    Mathieu, R.
    Svedlindh, P.
    Kanski, J.
    Karlsteen, M.
    Świątek, K.
    Domagała, J. Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035614.pdf
    Data publikacji:
    2002
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.75.+a
    75.50.Pp
    75.25.+z
    Opis:
    We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12Å or 24Å). The non-magnetic InGaAs spacer layers are 12Å thick. The composition (In content) in InGaMnAs and InGaAs was chosen in such a way that magnetic layers were: deep potential wells, high potential barriers, or shallow potential wells. For superlattices with 8 monolayer thick InGaMnAs magnetic layers and 4 monolayer thick InGaAs non-magnetic spacers the temperatures of paramagnetic-to-ferromagnetic phase transition do not depend on the band offsets between InGaMnAs and InGaAs adjusted by the In content.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 4-5; 687-694
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Solid Phase Epitaxy of Ferromagnetic MnAs Layer and Quantum Dots on Annealed GaMnAs
    Autorzy:
    Sadowski, J.
    Kanski, J.
    Adell, M.
    Domagała, J. Z.
    Janik, E.
    Łusakowska, E.
    Brucas, R.
    Hanson, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044534.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.10.Jt
    81.15.Hi
    68.65.Hb
    68.37.Ps
    Opis:
    We show that post growth annealing of GaMnAs under As capping at temperatures in the range of 180-210ºC leads to significant surface modifications. Depending on GaMnAs layer thickness and composition, we obtain either a smooth continuous reacted (MnAs) surface layer or 3D islands (quantum dots). The surface modifications are due to a solid phase epitaxial process, in which Mn interstitials diffusing to the GaMnAs surface are bound with the As.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 851-858
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth and Properties of ZnMnTe Nanowires
    Autorzy:
    Zaleszczyk, W.
    Janik, E.
    Presz, A.
    Szuszkiewicz, W.
    Morhange, J. F.
    Dłużewski, P.
    Kret, S.
    Kirmse, H.
    Neumann, W.
    Dynowska, E.
    Domagała, J. Z.
    Caliebe, W.
    Aleszkiewicz, M.
    Pacuski, W.
    Golnik, A.
    Kossacki, P.
    Baczewski, L. T.
    Petroutchik, A.
    Karczewski, G.
    Wojtowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047697.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.46.Df
    68.65.La
    78.55.Et
    78.67.Bf
    81.15.Hi
    Opis:
    Catalytically enhanced growth of ZnMnTe diluted magnetic semiconductor nanowires by molecular beam epitaxy is reported. The growth is based on the vapor-liquid-solid mechanism and was performed on (001) and (011)-oriented GaAs substrates from elemental sources. X-ray diffractometry, scanning and transmission electron microscopy, atomic force microscopy, photoluminescence spectroscopy, and Raman scattering were performed to determine the structure of nanowires, their chemical composition, and morphology. These studies revealed that the obtained ZnMnTe nanowires possess zinc-blende structure, have an average diameter of about 30 nm, typical length between 1 and 2μm and that Mn$\text{}^{2+}$ ions were incorporated into substitutional sites of the ZnTe crystal lattice.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 351-356
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spatially Resolved X-ray Diffraction Technique for Crystallographic Quality Inspection of Semiconductor Microstructures
    Autorzy:
    Domagala, J.
    Czyzak, A.
    Zytkiewicz, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811925.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    61.72.Ff
    68.55.ag
    Opis:
    Spatially resolved X-ray diffraction is introduced and applied for micro-imaging of strain in GaAs and GaSb layers grown by epitaxial lateral overgrowth on GaAs substrates. We show that laterally overgrown parts of the layers (wings) are tilted towards the underlying mask. By spatially resolved X-ray diffraction mapping the direction of the tilt and distribution of tilt magnitude across the width of each layer can be readily determined. This allows measuring of the shape of the lattice planes in individual epitaxial stripes. In GaSb/GaAs heteroepitaxial laterally overgrown layers local mosaicity in the wing area was found. By spatially resolved X-ray diffraction the size of microblocks and their relative misorientation were analyzed. Finally, microscopic curvature of lattice planes confined between two neighboring slip bands in thermally strained Si wafers is measured. All these examples show advantages of spatially resolved X-ray diffraction over a standard X-ray diffraction when applied for analysis of crystalline microstructures.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1101-1107
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Rocking Curve Imaging Studies of Laterally Overgrown GaAs and GaSb Epitaxial Layers
    Autorzy:
    Wierzbicka, A.
    Lübbert, D.
    Domagała, J.
    Zytkiewicz, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791425.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    68.55.ag
    81.15.Lm
    Opis:
    X-ray rocking curve imaging technique was used to study crystallographic perfection of laterally overgrown epitaxial structures. We focus on rocking curve imaging studies of Si-doped GaAs and GaSb laterally overgrown layers grown by liquid phase epitaxy on $SiO_{2}$ masked GaAs and GaSb/GaAs substrates, respectively. High spatial resolution offered by rocking curve imaging technique allows studying the effect of laterally overgrown epitaxial wing tilt towards the mask. Distribution of tilt magnitude over the area of laterally overgrown epitaxial stripes is easily determined. In heteroepitaxial GaSb/GaAs laterally overgrown epitaxial structures local mosaicity in the wing area was detected. Since individual grains are clearly visible on rocking curve imaging maps, their size and relative misorientation can be determined.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 976-978
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-Ray and Electron-Optical Characterization of ZnSe(Co) Crystal with Natural Face
    Autorzy:
    Auleytner, J.
    Domagała, J.
    Gołacki, Z.
    Pawłowska, M.
    Pełka, J.
    Regiński, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929340.pdf
    Data publikacji:
    1993-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.-i
    61.14.Hg
    61.16.Bg
    Opis:
    Using complementary X-ray and electron-optical methods, a ZnSe(Co) crystal with natural face was investigated. X-ray diffraction methods such as double-crystal X-ray reflection topography, double-crystal diffractometry for rocking curve measurements, precise lattice constant measurements by the Bond technique were used for crystal structure characterization and X-ray fluorescence method for studies of chemical composition along the crystal. The scanning electron microscopic image of the crystal surface and reflection diffraction of the high-energy electrons enriched the crystal structure characterization. It was shown that X-ray characterization and reflection high-energy electron diffraction can be regarded as very important complementary tools for non-destructive investigation of the ZnSe(Co) crystal surface layers.
    Źródło:
    Acta Physica Polonica A; 1993, 83, 6; 759-768
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Anisotropic Lattice Misfit Relaxation in AlGaAs Semi-Bulk Layers Grown on GaAs Substrates by Liquid Phase Electroepitaxy
    Autorzy:
    Żytkiewicz, Z. R.
    Domagała, J.
    Bąk-Misiuk, J.
    Dobosz, D.
    Leszczyński, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968459.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.60.Bs
    68.55.Ln
    Opis:
    Experimental evidence for unidirectional microcracking in semi-bulk AlGaAs layers grown on (001) GaAs substrates is presented. The asymmetrical microcracking leads to anisotropic lattice misfit relaxation in the AlGaAs/GaAs structure and is explained in terms of higher mobility of [-110]-oriented α-type dislocations than that of β-type dislocations oriented in [110] direction.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 1092-1096
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    PVT-Grown Single Crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe as Substrates for Epitaxy
    Autorzy:
    Mycielski, A.
    Szadkowski, A.
    Łusakowska, E.
    Kowalczyk, L.
    Domagała, J.
    Bąk-Misiuk, J.
    Wilamowski, Z.
    Witkowska, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991957.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.10.Bk
    Opis:
    The process of growth of single crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe by physical vapour transport has been optimized and the twin-free single crystals with a very good crystal structure and low density of dislocations are grown as substrates for MBE and other techniques of epitaxy. Characterization of the crystals is described.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 441-445
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Doping on Ga$\text{}_{1-x}$Al$\text{}_{x}$As Structural Properties
    Autorzy:
    Bąk-Misiuk, J.
    Domagała, J.
    Paszkowicz, W.
    Trela, J.
    Żytkiewicz, Z. R.
    Leszczyński, M.
    Regiński, K.
    Muszalski, J.
    Härtwig, J.
    Ohler, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964092.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Ea
    81.40.-z
    68.55.Ln
    61.10.Nz
    Opis:
    The microstructure of Ga$\text{}_{1-x}$Al$\text{}_{x}$As layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 911-915
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Technology of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors
    Autorzy:
    Guziewicz, M.
    Slysz, W.
    Borysiewicz, M.
    Kruszka, R.
    Sidor, Z.
    Juchniewicz, M.
    Golaszewska, K.
    Domagala, J.
    Rzodkiewicz, W.
    Ratajczak, J.
    Bar, J.
    Wegrzecki, M.
    Sobolewski, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492719.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.62.Bf
    74.78.-w
    81.15.Cd
    81.15.Jj
    Opis:
    We report fabrication and characterization of ultrathin NbN and NbTiN films designed for superconducting photodetectors. Our NbN and NbTiN films were deposited on $Al_2O_3$ and Si single-crystal wafers by a high-temperature, reactive magnetron sputtering method and, subsequently, annealed at 1000°C. The best, 18 nm thick NbN films deposited on sapphire exhibited the critical temperature of 15.0 K and the critical current density as high as ≈ 8 × $10^6$ A/$cm^2$ at 4.8 K.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-076-A-079
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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