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Wyświetlanie 1-2 z 2
Tytuł:
Defect Recovery in α-Fe e$\text{}^{-}$-irradiated at 300 K
Autorzy:
Dai, G. H.
Li, X. H.
Moser, P.
Moya, G.
Van Duysen, J. C.
Powiązania:
https://bibliotekanauki.pl/articles/1928989.pdf
Data publikacji:
1993-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.70.Bv
61.80.Fe
78.70.Bj
Opis:
Defect annealing recovery has been studied, by measuring positron lifetime spectra, in high-purity α-iron irradiated at 300 K with 3 MeV electrons to a fluency of 7 × 10$\text{}^{19}$ cm$\text{}^{-2}$. Vacancy clusters containing 6-10 single vacancies were observed immediately after irradiation during which they were possibly forming (the so-called "irradiation annealing"). With increasing temperature, the agglomerates continually grow in size at the expense of their concentration, giving rise to the formation of microvoids (> 15 vacancies). Also present were other types of defects, probably immobile vacancies trapped by impurity (e.g. carbon) atoms and dislocation/loops generated presumably from collapse of voids during the relatively high dose irradiation and/or the annealing. The immobile vacancies eventually became movable at around 350 K, supplying the growing clusters and thus leading to a stabilization in their concentration till around 500 K. Between 500 and 700 K, microvoids gradually evaporated, but the dislocation-associated defects were able to survive annealing at temperatures as high as 700 K. The void size and concentration and their evolution have been evaluated on the basis of both the to date theoretical and experimental studies. The temperature dependence was also, observed of positron trapping into vacancy agglomerates of various sizes.Za
Źródło:
Acta Physica Polonica A; 1993, 83, 3; 277-286
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Contactless Electroreflectance Study of Temperature Dependence of Fundamental Band Gap of ZnSe
Autorzy:
Krystek, W.
Malikova, L.
Pollak, F. H.
Tamargo, M. C.
Dai, N.
Zeng, L.
Cavus, A.
Powiązania:
https://bibliotekanauki.pl/articles/1934065.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.40.Fy
78.20.Wc
78.20.-e
Opis:
We report a systematic study of the temperature variation of the energy [E$\text{}_{0}$(T)] and broadening parameter [Γ$\text{}_{0}$(T)] of the fundamental band gap of ZnSe in the range 27 K < T < 370 K using contactless electroreflectance. The obtained values of E$\text{}_{0}$(T) and Γ$\text{}_{0}$(T) have been fit to various semi-empirical expressions to obtain information about the exciton-phonon coupling in this system. The experimentally determined E$\text{}_{0}$(T) also is of significance for technological applications since it can be used to determine the operating temperature of ZnSe-based devices such as quantum well lasers.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 1013-1017
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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