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Wyszukujesz frazę "Choi, S." wg kryterium: Autor


Wyświetlanie 1-6 z 6
Tytuł:
Nondestructive Evaluation of Shoes Bonded Area Defect Composed of EVA Materials
Autorzy:
Choi, S.
Kim, J.
Powiązania:
https://bibliotekanauki.pl/articles/1399864.pdf
Data publikacji:
2013-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.70.Cv
81.70.Fy
81.05.Lg
87.63.Hg
Opis:
The accurate detection of product defects in the assembly line is crucial to any industry. To achieve accurate detection, extensive studies have been conducted, in particular, on the nondestructive inspection technique. Shoe manufacturers, however, have yet to adopt a reliable defect-detection technique for their total inspection system. The deterioration of strength, one of the most common defects found in the shoe manufacturing process, is caused by the delamination in the bonding stage. Inadequate bonding between midsole and insole, the most serious of identified defects, has so far been detected only by cutting a sample shoe and examining it for its strength. For this study, the researcher tested the validity of some nondestructive techniques employed in inspecting shoes, particularly the infrared thermography technique and non contact air coupled ultrasonic testing, which are used to examine the bonded part of shoes made from ethylene vinyl acetate (EVA), the most common material used in manufacturing shoes. The study has thus confirmed the feasibility of applying a total inspection and nondestructive inspection technique to shoe inspection.
Źródło:
Acta Physica Polonica A; 2013, 123, 2; 333-336
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication of Antireflection Structures as a Protective Layer of Solar Cells with Nanoporous Silica Films and Nanoimprinted Moth-Eye Structure
Autorzy:
Kim, K.
Han, J.
Jang, J.
Choi, C.
Choi, S.
Kim, C.
Kye, H.
Cheong, I.
Powiązania:
https://bibliotekanauki.pl/articles/1492625.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.46.-w
68.37.-d
68.55.-a
78.20.-e
Opis:
The antireflection structures are fabricated by sol-gel process as a protective layer of solar cells and by hot embossing process with anodized aluminum oxide membrane template on polycarbonate film. The optical properties and morphology of the antireflection structures are analyzed by UV-visible spectroscopy and field emission scanning electron microscopy, respectively. The total conversion efficiency of a polycrystalline Si solar cell module with the protective layer, sol-gel-derived nanoporous antireflection structure, is increased by 2.6% and 5.7% for one-side antireflection coated prismatic matt glass and both-side antireflection coated prismatic matt glass, respectively.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-047-A-049
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Variable-Focus Fluid Lens Using an Electromagnetic Actuator
Autorzy:
Lee, J.
Park, K.
Choi, J.
Kim, H.
Kong, S.
Powiązania:
https://bibliotekanauki.pl/articles/1399681.pdf
Data publikacji:
2013-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.85.+j
42.79.Bh
Opis:
A variable-focus fluid lens controlled by an electromagnetic actuator and its characteristics are presented in this paper. The repulsive force between an NdFeB magnet and a solenoid through electromagnetic induction causes deflections in the elastomeric membranes integrated in the lens resulting in a focal-length change. The controllability of the focal length of the fabricated lens with an aperture size of 2 mm was approximately from infinity to 15 mm (with input current of 100 mA). The actuator including the solenoid was carefully designed to avoid thermal crosstalk of the lens fluid and magnet from the electromagnetic induction of the solenoid. The settling time to form a convex shape of the lens membrane was approximately 2.5 ms at an input current of 20 mA.
Źródło:
Acta Physica Polonica A; 2013, 123, 2; 202-204
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots
Autorzy:
Kim, G.
Jeon, S.
Cho, M.
Choi, H.
Kim, D.
Kim, M.
Kwon, Y.
Choe, J.
Kim, J.
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1535820.pdf
Data publikacji:
2010-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
68.37.Ps
78.55.Cr
78.67.Hc
Opis:
The influence of InAs coverage on the formation of self-assembled quantum dots grown by molecular-beam epitaxy was investigated by atomic force microscopy and photoluminescence measurements. As the InAs coverage increased from 2.0 to 3.0 monolayers, the quantum dot density decreased from 1.1 × $10^{11}$ to 1.36 × $10^{10} cm^{-2}$. This result could be attributed to the coalescence of neighboring small InAs quantum dots resulting in the formation of much larger InAs quantum dots with lower quantum dot density. Atomic force microscopy results revealed that as the InAs quantum dot coverage increased, the transition of size distribution of InAs quantum dots from single-modal to multimodal occurred. The temperature-dependent photoluminescence spectra showed that the photoluminescence spectra red shifted and the photoluminescence peak intensity decreased as the InAs coverage increased. The thermal activation energy was strongly dependent on the InAs coverage, and for InAs quantum dots with 3.0 ML thick InAs coverage, this energy was estimated to be 147 meV.
Źródło:
Acta Physica Polonica A; 2010, 118, 4; 673-676
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors
Autorzy:
Kim, D.
Kim, G.
Jeon, S.
Cho, M.
Choi, H.
Kim, M.
Lee, D.
Kim, J.
Eom, G.
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1537752.pdf
Data publikacji:
2010-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Cr
81.05.Ea
Opis:
Multi-stacked InAs QDs embedded in ten periods of GaAs/$In_{0.1}Ga_{0.9}As$ strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/$In_{0.1}Ga_{0.9}As$ strained layers, the PL intensity is enhanced about 4.7 times and a narrower FWHM of 26 meV is observed compared to those of the conventional multi-stacked QDs. The PL spectra of the InAs QDs show blue-shifts of about 50 meV with increasing annealing temperature up to 850°C. At annealing temperature of 600°C, the FWHM of the PL peak is reduced to 16 meV and PL intensity is enhanced compared to those of the as-grown sample, which indicates improvement of size uniformity and crystal quality of the QDs.
Źródło:
Acta Physica Polonica A; 2010, 117, 6; 941-944
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer
Autorzy:
Kim, M.
Jin, S.
Choi, H.
Kim, G.
Yim, K.
Kim, S.
Nam, G.
Yoon, H.
Kim, Y.
Lee, D.
Kim, Jin
Kim, Jong
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1505152.pdf
Data publikacji:
2011-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
81.15.Gh
Opis:
A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × $10^{19} cm^{-3}$ was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
Źródło:
Acta Physica Polonica A; 2011, 119, 6; 875-879
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-6 z 6

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