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Wyszukujesz frazę "Choi, J. H." wg kryterium: Autor

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    Wyświetlanie 1-7 z 7
    Tytuł:
    Development of Carbon Nanotube Based Reflection Type X-ray Source
    Autorzy:
    Choi, H.
    Kim, J.
    Lee, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807922.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.47.Lx
    75.47.Gk
    73.50.Fq
    Opis:
    X-ray imaging technology is a useful and leading medical diagnostic tool for health care professionals to diagnose disease in human body. Carbon nanotube based X-ray source, which we have developed in this study, could be also useful and supply integrated diagnostic X-ray imaging tool in diagnosis. Conventionally, thermionic type of tungsten filament X-ray tube is widely employed in the field of biomedical and industrial application fields. However, intrinsic problems, such as poor emission efficiency, low imaging resolution, and high electrical energy consumption etc., may cause the limitation of using the X-ray tube. To fulfill the current market requirement, specifically for medical diagnostic field, we have developed rather a portable and compact carbon nanotube based X-ray device in which microfocus high imaging resolution can be feasible.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 1078-1080
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication of Antireflection Structures as a Protective Layer of Solar Cells with Nanoporous Silica Films and Nanoimprinted Moth-Eye Structure
    Autorzy:
    Kim, K.
    Han, J.
    Jang, J.
    Choi, C.
    Choi, S.
    Kim, C.
    Kye, H.
    Cheong, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492625.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.46.-w
    68.37.-d
    68.55.-a
    78.20.-e
    Opis:
    The antireflection structures are fabricated by sol-gel process as a protective layer of solar cells and by hot embossing process with anodized aluminum oxide membrane template on polycarbonate film. The optical properties and morphology of the antireflection structures are analyzed by UV-visible spectroscopy and field emission scanning electron microscopy, respectively. The total conversion efficiency of a polycrystalline Si solar cell module with the protective layer, sol-gel-derived nanoporous antireflection structure, is increased by 2.6% and 5.7% for one-side antireflection coated prismatic matt glass and both-side antireflection coated prismatic matt glass, respectively.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-047-A-049
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Variable-Focus Fluid Lens Using an Electromagnetic Actuator
    Autorzy:
    Lee, J.
    Park, K.
    Choi, J.
    Kim, H.
    Kong, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399681.pdf
    Data publikacji:
    2013-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.85.+j
    42.79.Bh
    Opis:
    A variable-focus fluid lens controlled by an electromagnetic actuator and its characteristics are presented in this paper. The repulsive force between an NdFeB magnet and a solenoid through electromagnetic induction causes deflections in the elastomeric membranes integrated in the lens resulting in a focal-length change. The controllability of the focal length of the fabricated lens with an aperture size of 2 mm was approximately from infinity to 15 mm (with input current of 100 mA). The actuator including the solenoid was carefully designed to avoid thermal crosstalk of the lens fluid and magnet from the electromagnetic induction of the solenoid. The settling time to form a convex shape of the lens membrane was approximately 2.5 ms at an input current of 20 mA.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 2; 202-204
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence Studies of Aluminum Nitride Nanowires
    Autorzy:
    Yang, J.
    Na, H.
    Kim, H.
    Kebede, M.
    Choi, R.
    Jeong, J.
    Lee, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505466.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.-b
    78.55.-m
    Opis:
    We report the production of AlN nanowires by the thermal heating method, for exploring their photoluminescence properties. The room-temperature photoluminescence properties were investigated with different annealing environment. While broad emissions with peaks at around 2.45 and 2.95 eV were obtained from both unannealed and annealed samples, the additional 2.1 eV peak was found from the annealed samples. We have suggested the possible emission mechanisms based on the assumption that both 2.45 eV peak and 2.1 eV peak are ascribed to the nitrogen vacancies. Annealing in N_2 environment exhibited lower intensities of 2.45 eV peak and 2.1 eV peak in comparison to those in Ar environment, presumably due to the suppression of nitrogen vacancies.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 125-127
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots
    Autorzy:
    Kim, G.
    Jeon, S.
    Cho, M.
    Choi, H.
    Kim, D.
    Kim, M.
    Kwon, Y.
    Choe, J.
    Kim, J.
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1535820.pdf
    Data publikacji:
    2010-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    68.37.Ps
    78.55.Cr
    78.67.Hc
    Opis:
    The influence of InAs coverage on the formation of self-assembled quantum dots grown by molecular-beam epitaxy was investigated by atomic force microscopy and photoluminescence measurements. As the InAs coverage increased from 2.0 to 3.0 monolayers, the quantum dot density decreased from 1.1 × $10^{11}$ to 1.36 × $10^{10} cm^{-2}$. This result could be attributed to the coalescence of neighboring small InAs quantum dots resulting in the formation of much larger InAs quantum dots with lower quantum dot density. Atomic force microscopy results revealed that as the InAs quantum dot coverage increased, the transition of size distribution of InAs quantum dots from single-modal to multimodal occurred. The temperature-dependent photoluminescence spectra showed that the photoluminescence spectra red shifted and the photoluminescence peak intensity decreased as the InAs coverage increased. The thermal activation energy was strongly dependent on the InAs coverage, and for InAs quantum dots with 3.0 ML thick InAs coverage, this energy was estimated to be 147 meV.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 4; 673-676
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors
    Autorzy:
    Kim, D.
    Kim, G.
    Jeon, S.
    Cho, M.
    Choi, H.
    Kim, M.
    Lee, D.
    Kim, J.
    Eom, G.
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1537752.pdf
    Data publikacji:
    2010-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    78.55.Cr
    81.05.Ea
    Opis:
    Multi-stacked InAs QDs embedded in ten periods of GaAs/$In_{0.1}Ga_{0.9}As$ strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/$In_{0.1}Ga_{0.9}As$ strained layers, the PL intensity is enhanced about 4.7 times and a narrower FWHM of 26 meV is observed compared to those of the conventional multi-stacked QDs. The PL spectra of the InAs QDs show blue-shifts of about 50 meV with increasing annealing temperature up to 850°C. At annealing temperature of 600°C, the FWHM of the PL peak is reduced to 16 meV and PL intensity is enhanced compared to those of the as-grown sample, which indicates improvement of size uniformity and crystal quality of the QDs.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 6; 941-944
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer
    Autorzy:
    Kim, M.
    Jin, S.
    Choi, H.
    Kim, G.
    Yim, K.
    Kim, S.
    Nam, G.
    Yoon, H.
    Kim, Y.
    Lee, D.
    Kim, Jin
    Kim, Jong
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505152.pdf
    Data publikacji:
    2011-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    81.15.Gh
    Opis:
    A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × $10^{19} cm^{-3}$ was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 6; 875-879
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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