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Wyszukujesz frazę "Baranowski, T." wg kryterium: Autor

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    Wyświetlanie 1-8 z 8
    Tytuł:
    Photoreflectance Measurements of InGaAs/GaAs Quantum Wells
    Autorzy:
    Tomaszewicz, T.
    Korona, K. P.
    Bożek, R.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952324.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Bd
    73.20.Dx
    78.66.Fd
    Opis:
    Samples with InGaAs/GaAs quantum wells were grown by metallo-organic chemical vapour deposition in order to detect and analyze GaSb islands deposited on the surface. Results of photoreflectance measurements of quantum wells are reported. The correspondence between broadening of quantum well transition lines and GaSb structures has been observed.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 965-968
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Positron Annihilation Lifetime Spectroscopy and Dielectric Measurements of Natural Kaolinite and Kaolinite Intercalated by Potassium Acetate
    Autorzy:
    Leluk, K.
    Orzechowski, K.
    Jerie, K.
    Baranowski, A.
    Słonka, T.
    Głowiński, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047141.pdf
    Data publikacji:
    2006-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    91.60.-x
    77.22.-d
    78.70.Bj
    Opis:
    Intercalation of clay minerals consists in inserting of guest molecules into interlayer area. It results in expanding the interlayer distance and changes of physical and chemical properties of the material. Dielectric spectroscopy, positron annihilation lifetime experiments, X-ray, and thermoanalysis were jointly applied to investigate the structural changes accompanying intercalation.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 5; 621-629
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Electrical Properties of High Temperature Annealed Heteroepitaxial GaN:Mg Layers
    Autorzy:
    Wojdak, M.
    Baranowski, J. M.
    Suchanek, B.
    Pakuła, K.
    Jun, J.
    Suski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968449.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    73.61.Ey
    78.55.Cr
    Opis:
    In this paper we present for the first time luminescence and electrical measurements of GaN:Mg heteroepitaxial layers annealed at very high temperatures up to 1500°C and at high pressures of nitrogen up to 16 kbar. The presence of high nitrogen pressure prevents GaN from thermal decomposition. It was found that annealing in the presence of additional Mg atmosphere leads to a high quality p-type epitaxial layer of the hole concentration equal to 2×10$\text{}^{17}$ cm$\text{}^{-3}$ and mobility 16 cm$\text{}^{2}$/(V s). However, annealing at high temperatures without additional magnesium causes conversion to n-type. It is also shown that in the high temperature annealed GaN:Mg epilayers the donor-acceptor luminescence is the dominant recombination channel.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 1059-1062
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Positron Annihilation Studies of Styrene-N-X-Phenylmaleimides
    Autorzy:
    Baranowski, A.
    Dębowska, M.
    Jerie, K.
    Rudzińska-Girulska, J.
    Pawełka, Z.
    Sikorski, R. T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933467.pdf
    Data publikacji:
    1995-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    78.70.Βj
    81.20.Sh
    82.30.Hk
    Opis:
    Results of angular correlation of annihilation radiation and positron annihilation lifetime measurements are presented for five styrene copolymers: poly(co-styrene-phenylmaleimide) and its three derivatives with chlorine as well as for one with the OH group substituted in the benzene ring. It occurs that the chlorine substituted in three different positions in the benzene ring poly(co-styrene-o (or -m, -p)-chlorophenylmaleimide) inhibits the formation of the positronium to different extent. The greatest effect is observed in case of the chlorine atoms substituted in the benzene ring at ortho-position towards the nitrogen atom. In addition, electric dipole moments were measured for N-X-phenylmaleimide units, to check whether their magnitude influences the positron annihilation parameters. On the basis of the present results no correlation between the positron annihilation parameters and the electric dipole moments of the units was noticed.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 1; 51-57
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Positron Annihilation in Chloropolystyrenes
    Autorzy:
    Baranowski, A.
    Dębowska, M.
    Jerie, K.
    Mirkiewicz, G.
    Rudzińska-Girulska, J.
    Sikorski, R. T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1928863.pdf
    Data publikacji:
    1993-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    78.70.Bj
    81.20.Sh
    82.30.Hk
    Opis:
    Results of angular correlation of annihilation radiation and positron annihilation lifetime measurements are presented for atactic polystyrene and chloropolystyrenes. The inhibition of positronium formation follows the chlorine introduction as the decrease in intensities of the narrow component in angular correlation of annihilation radiation curves and of the longest-lived component in positron annihilation lifetime spectra prove. In general, the chlorine "activity" towards positrons seems to depend on its position in the polymer structure. The annihilation rate distribution as well as the radius and volume distributions of free-volume sites where positronium is assumed to be formed obtained with the use of CONTIN program for the raw sample in the 2nd series are given additionally.
    Źródło:
    Acta Physica Polonica A; 1993, 83, 3; 239-249
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Adaptive Modulation Amplitude in 2D Spectral-Spatial EPR Imaging
    Autorzy:
    Czechowski, T.
    Samolej, A.
    Baranowski, M.
    Boś-Liedke, A.
    Chlewicki, W.
    Jurga, J.
    Tadyszak, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030422.pdf
    Data publikacji:
    2018-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    76.30.-v
    42.30.Wb
    75.20.-g
    42.30.Va
    Opis:
    A study concerning the image quality in Electron Paramagnetic Resonance Imaging (EPRI) in 2D spectral-spatial (2D SSI) experiments is presented. The aim of the measurements is to improve the signal to noise ratio (SNR) of the projections by applying a more consciously selected modulation amplitude parameter. Data is gathered by applying three constant and one adaptive modulation amplitude. The three fixed modulation amplitudes values are leading to undermodulated (0.01 G), partially overmodulated (0.15 G) and fully overmodulated (0.65 G) projections. The study demonstrates the advantages of the adaptive method, which involves selecting different and dependent on cosine function modulation amplitudes for each projection. The study is performed on a phantom containing four tubes of LiPc and TCNQ, characterized by a different peak to peak linewidth and spin concentration.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 3; 710-712
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers
    Autorzy:
    Leszczyński, M.
    Teisseyre, H.
    Suski, T.
    Grzegory, I.
    Boćkowski, M.
    Jun, J.
    Pałosz, B.
    Porowski, S.
    Pakuła, K.
    Baranowski, J. M.
    Barski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952040.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ji
    61.72.Vv
    Opis:
    Thermal expansion of gallium nitride was measured using high resolution X-ray diffraction. The following samples were examined: (i) single monocrystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers. The main factor influencing both, the lattice parameters and the thermal expansion coefficient, are free electrons related to the nitrogen vacancies. The origin of an increase in the lattice constants by free electrons is discussed in terms of the deformation potential of the conduction-band minimum. An increase of the thermal expansion by free electrons is explained by a decrease of elastic constants.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 887-890
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Resistivity GaN Single Crystalline Substrates
    Autorzy:
    Porowski, S.
    Boćkowski, M.
    Łucznik, B.
    Grzegory, I.
    Wróblewski, M.
    Teisseyre, H.
    Leszczyński, M.
    Litwin-Staszewska, E.
    Suski, T.
    Trautman, P.
    Pakuła, K.
    Baranowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968415.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.80.Ey
    Opis:
    High resistivity 10$\text{}^{4}$-10$\text{}^{6}$ Ω cm (300 K) GaN single crystals were obtained by solution growth under high N$\text{}_{2}$ pressure from melted Ga with 0.1-0.5at.% of Mg. Properties of these crystals are compared with properties of conductive crystals grown by a similar method from pure Ga melt. In particular, it is shown that Mg-doped GaN crystals have better structural quality in terms of FWHM of X-ray rocking curve and low angle boundaries. Temperature dependence of electrical resistivity suggests hopping mechanism of conductivity. It is also shown that strain free GaN homoepitaxial layers can be grown on the Mg-doped GaN substrates.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 958-962
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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