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    Wyświetlanie 1-8 z 8
    Tytuł:
    Mixed State in t-U-J-V Model
    Autorzy:
    Tobijaszewska, B.
    Bak, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1810406.pdf
    Data publikacji:
    2009-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.20.-z
    74.20.Rp
    74.25.Dw
    71.10.Fd
    71.27.+a
    Opis:
    The t-U-J-V model in the U → ∞ limit is treated by renormalized mean-field theory for arbitrary electron density. Superconductivity of s+id symmetry is found in the large parts of the phase diagram. Calculations also show a possibility of phase separation.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 1; 135-137
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of Si(111) Implanted with As Ions by X-Ray Diffraction and Grazing Incidence Methods
    Autorzy:
    Pełka, J. B.
    Górecka, J.
    Auleytner, J.
    Domagała, J.
    Bąk-Misiuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964119.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    68.55.Jk
    Opis:
    The Si(111) wafer cut from a bulk single crystal obtained by the Czochralski method was implanted with 5×10$\text{}^{16}$ I cm$\text{}^{-2}$ of As ions of energy 80 keV. The dose applied was chosen above the amorphization limit of the silicon substrate. Two samples, implanted and a reference, were studied by grazing incidence X-ray reflectometry and X-ray diffraction methods using a high resolution Philips MRD system equipped with a Cu source and a channel-cut monochromator. The obtained spectra were compared with distributions of ion range and defect production calculated with TRIM program [1], as well as with theoretical models of reflectivity [2, 3]. The results of grazing incidence X-ray reflectometry reflectivity of the implanted sample show well-pronounced oscillations, which can be associated with a layer about 50 nm thick, approximately comparable to the thickness of the defected layer estimated from the TRIM method. Theoretical calculations of reflectivity clearly indicate an occurrence of a Si layer of electron density lower about 10-15% comparing to the unimplanted Si sample. This can be due to the vacancy production during ion implantation. A comparison of the spectra with a density distribution profile concluded from the TRIM calculations shows large discrepancies. The results indicate the applicability of grazing incidence X-ray reflectometry method in a study of amorphization processes in implanted layers.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 905-910
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Changes of GaP: N Defect Structure under Hydrostatic Pressure
    Autorzy:
    Bąk-Misiuk, J.
    Domagała, J.
    Kozankiewicz, B.
    Misiuk, A.
    Adamczewska, J.
    Skibska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1924323.pdf
    Data publikacji:
    1993-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    65.70.+y
    Opis:
    The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c$\text{}_{N}$, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c$\text{}_{N}$ > 10$\text{}^{20}$ at. cm$\text{}^{-3}$. The model explaining the hydrostatic pressure induced defect structure changes is proposed.
    Źródło:
    Acta Physica Polonica A; 1993, 83, 1; 87-93
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure
    Autorzy:
    Misiuk, A.
    Bąk-Misiuk, J.
    Bryja, L.
    Kątcki, J.
    Ratajczak, J.
    Jun, J.
    Surma, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030659.pdf
    Data publikacji:
    2002-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.-i
    61.72.Yx
    81.40.Vw
    Opis:
    Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O$\text{}^{+}$ dose, D, within the 6×10$\text{}^{17}$-2×10$\text{}^{18}$ cm$\text{}^{-2}$ range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10$\text{}^{17}$ cm$\text{}^{-2}$). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 5; 719-727
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry
    Autorzy:
    Misiuk, A.
    Härtwig, J.
    Prieur, E.
    Ohler, M.
    Bąk-Misiuk, J.
    Domagała, J.
    Surma, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964154.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Yx
    81.40.Vw
    61.10.-i
    Opis:
    The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 987-991
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    PVT-Grown Single Crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe as Substrates for Epitaxy
    Autorzy:
    Mycielski, A.
    Szadkowski, A.
    Łusakowska, E.
    Kowalczyk, L.
    Domagała, J.
    Bąk-Misiuk, J.
    Wilamowski, Z.
    Witkowska, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991957.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.10.Bk
    Opis:
    The process of growth of single crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe by physical vapour transport has been optimized and the twin-free single crystals with a very good crystal structure and low density of dislocations are grown as substrates for MBE and other techniques of epitaxy. Characterization of the crystals is described.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 441-445
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure
    Autorzy:
    Misiuk, A.
    Wierzchowski, W.
    Wieteska, K.
    Londos, C.
    Andrianakis, A.
    Bak-Misiuk, J.
    Yang, D.
    Surma, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1539028.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    61.72.-y
    61.72.Ff
    61.72.uf
    62.50.-p
    Opis:
    Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × $10^{14} cm^{-3}$ (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 344-347
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment
    Autorzy:
    Wieteska, K.
    Misiuk, A.
    Prujszczyk, M.
    Wierzchowski, W.
    Surma, B.
    Bąk-Misiuk, J.
    Romanowski, P.
    Shalimov, A.
    Capan, I.
    Yang, D.
    Graeff, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812256.pdf
    Data publikacji:
    2008-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.c-
    61.72.-y
    61.82.-d
    Opis:
    Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content $(c_O)$ up to $1.1×10^{18} cm^{-3}$, admixed with N or Ge (Si-N, c_N ≤ $1.2×10^{15} cm^{-3}$, or Si-Ge, $c_{Ge} ≈ 7×10^{17} cm^{-3}$, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 2; 439-446
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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