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    Wyświetlanie 1-11 z 11
    Tytuł:
    Ion Beam Sputtering Monitored by Optical Spectroscopy
    Autorzy:
    El Fqih, M.
    Fournier, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808025.pdf
    Data publikacji:
    2009-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    79.20.Rf
    Opis:
    Optical spectroscopy gives a simple means to follow the evolution of the surface composition during ion beam sputtering. This is illustrated by three examples: air oxidised metals (Al and Cu), various CuAl alloys and the $Cu_{98}Be_2$ alloy. Several time scales are distinguished, corresponding to different processes: the elimination of surface contaminants, the removal of the corroded layer. The implications for the use of ion beam optical spectroscopy in surface analysis are discussed.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 5; 901-904
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Depth Profile Analysis of Phosphorus Implanted SiC Structures
    Autorzy:
    Konarski, P.
    Król, K.
    Miśnik, M.
    Sochacki, M.
    Szmidt, J.
    Turek, M.
    Żuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402214.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    68.55.Ln
    82.80.Ms
    85.40.Ry
    Opis:
    Secondary ion mass spectrometry depth profile analyses were performed on two sets of 4H-SiC(0001) substrate samples implanted with phosphorus. Both sets were processed under the same conditions. We implanted the samples with 100 keV (10¹¹-10¹⁴ cm¯²) phosphorus ions through the thin chemical vapor deposition deposited silicon dioxide stopping mask in order to obtain an ultra-shallow implantation profile. After phosphorus implantation, secondary ion mass spectrometry depth profile analysis was performed on the first set of samples and the second set was subjected to thermal oxidation procedure at 1200°C in order to create a dielectric layer. The aim of the oxidation process was formation of the silicon dioxide layer enriched with phosphorus: the element, which is considered to be suitable for trap density reduction. Ion implantation parameters as well as oxidation and chemical etching procedures were examined for the proper incorporation of phosphorus into the subsurface structure of the silicon oxide. Secondary ion mass spectrometry depth profile analysis was performed with Physical Electronics 06-350E sputter ion gun and QMA-410 Balzers quadrupole mass analyser. The analytical parameters such as: 1.7 keV Ar⁺ ion beam digitally scanned over 3×3 mm² area and ion erosion rate of 1.4 nm/min and sampling rate of 0.3 nm, were suitable for samples oxidized after ion implantation.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 864-866
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Channelling of H$\text{}^{0}$ and H$\text{}^{+}$ in Si Single Crystal
    Autorzy:
    Moneta, M.
    Gront, K.
    Gwizdałła, T.
    Czerbniak, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035636.pdf
    Data publikacji:
    2002-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.85.+p
    68.49.Sf
    61.80.Lj
    Opis:
    The differences in the Rutherford backscattering angular spectra measured for 100 keV hydrogen atoms H$\text{}^{0}$ and protons H$\text{}^{+}$ backscattered from Si crystal are reported and analysed. It was shown that the H$\text{}^{0}$ atom beam is better channelled in the pure crystal and is much more sensitive to the crystal surface coverage, particularly Au layer than the H$\text{}^{+}$ ion beam. The deep crystal regions seem to strengthen this differences.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 6; 759-766
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ion Beam Analysis of Hydrogen-Treated Ti/TiN Protective Nanomultilayers
    Autorzy:
    Kakuee, O.
    Fathollahi, V.
    Lamehi-Rachti, M.
    Oliaiy, P.
    Seyedi, H.
    Safa, S.
    Mojtahedzadeh Larijani, M.
    Moazzami, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1419781.pdf
    Data publikacji:
    2012-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.43.-h
    68.49.-h
    81.15.Jj
    25.45.-z
    Opis:
    Ti/TiN multilayer films with a few multilayer periods and a total sub-μm thickness were deposited on AISI 304 stainless steel substrates by ion coating deposition technique. To investigate the effect of hydrogen treatment on the corrosion behavior of the multilayers, some of the samples were hydrogen treated after deposition of the first and/or the second Ti interlayer. $\text{}^{14}N(d,\alpha_1) \text{}^{12}C$ nuclear reaction and the Rutherford backscattering spectrometry were used to obtain the atomic composition profiles and thickness of Ti/TiN layers. Nuclear reaction analysis confirmed the presence of two separable TiN layers of comparable thickness on the surface and in depth of the two-period multilayers. These techniques were used to determine the thickness of individual Ti and TiN layers and revealed that the stoichiometry of TiN layers was approximately Ti:N=1:1. Hydrogen depth profile in the prepared samples was obtained by elastic recoil detection analysis. It was found that a remarkable volume of hydrogen was uptaken by the Ti layer in the hydrogen treated samples. The TiN (200) diffraction peak in the X-ray diffraction pattern was observed with different intensities depending on the sample preparation parameters. The corrosion behavior of the multilayers was studied by means of potentiodynamic polarization in 0.5 M NaCl solutions. It was found that the hydrogen treatment of Ti interlayer could potentially improve the corrosion properties of the Ti/TiN layers.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 1; 132-137
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Anisotropy of the Magnetocaloric Effect in the $Ni_{49.6}Mn_{27.6}Ga_{22.8}$ Single Crystal
    Autorzy:
    Wroblewski, R.
    Sielicki, K.
    Leonowicz, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402315.pdf
    Data publikacji:
    2015-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    65.40.gd
    75.30.Gw
    75.30.Sg
    Opis:
    The magnetocaloric effect anisotropy in the $Ni_{49.6}Mn_{27.6}Ga_{22.8}$ single crystal was investigated. In the examined alloy the structural phase transition and magnetic transition occur at room temperature and around 370 K, respectively. The magnetic entropy change, at those two temperatures, was determined on the basis of isothermal and isofield curves, recorded at fields up to 1200 kA/m (1.5 T) with temperature steps of 2.5 and 5 K. Although the calculated values of magnetic entropy change are relatively small, ≈0.7 J/(kg K), an anisotropy of the magnetocaloric effect is observed with a magnetic field applied along the main crystallographic directions of the single crystal. The magnetic entropy change at the structural phase transition depends on the orientation. The weakest magnetocaloric effect occurs when the field is applied along [1 0 0] direction whereas the highest magnetocaloric effect value is reached along [0 0 1] direction, which is an easy magnetization axis. Such behaviour can be explained with the high magnetocrystalline anisotropy of the martensitic phase. The magnetic entropy change value, at the structural phase transition, obtained for the polycrystalline specimen, is close to that for the [0 0 1] single crystal direction.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 1; 54-55
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Analysis of Thin Films by Time-of-Flight Low Energy Ion Scattering
    Autorzy:
    Průša, S.
    Kolíbal, M.
    Bábor, P.
    Mach, J.
    Šikola, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047292.pdf
    Data publikacji:
    2007-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    81.05.Cy
    68.55.-a
    81.15.Ef
    Opis:
    In the paper the design and application of a time-of-flight low energy ion scattering instrument built into an UHV complex deposition and analytical apparatus is described. A special attention is aimed at demonstrating the ability of time-of-flight low energy ion scattering to analyse near-to-surface layers of thin films prepared both ex situ and in situ. It is shown that the broadening of peaks in time-of-flight low energy ion scattering spectra can be attributed to multiple scattering and inelastic losses of ions in deeper layers. As a result of that, the peak width of ultrathin films depends on their thickness.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 3; 335-341
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural Evolution of Near-Surface Layers in NiTi Alloy Caused by an Ion Implantation
    Autorzy:
    Swiatek, Z.
    Michalec, M.
    Levintant-Zayonts, N.
    Bonarski, J.
    Budziak, A.
    Bonchyk, O.
    Savitskij, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503940.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.-a
    68.49.Uv
    Opis:
    The results of X-ray diffraction studies on structural changes in the near-surface layers in the NiTi alloy caused by nitrogen-ion implantation with the energy E = 50 keV and the fluence D = $10^{18} cm^{-2}$ are presented. X-ray diffractometry, using the Philips diffractometer type X'Pert in the Bragg-Brentano geometry, was used to identify the phase composition of NiTi alloy. For layer by layer analysis of structural changes in the near-surface layers, the D8 Discover Bruker diffractometer with polycapilar beam optics was used. The ion-implanted NiTi alloy in the near-surface layer exhibits five phases: the dominating austenite phase, two martensitic phases and a small amount of the $Ni_4Ti_3$ and NTi phases. Along with the decreasing thickness of the near-surface layer investigated in material an increasing fraction of the $Ni_4Ti_3$ and NTi phases was observed. With the thickness of this layer about 340 nm, besides still existing the austenite, $Ni_4Ti_3$ and NTi phases, only one martensitic phase is present in the alloy. Further decrease of the thickness of the near-surface layer to about 170 nm leads to the increasing fraction of the $Ni_4Ti_3$ and NTi phases.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 75-78
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN
    Autorzy:
    Borysiewicz, M.
    Kamińska, E.
    Piotrowska, A.
    Pasternak, I.
    Jakieła, R.
    Dynowska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811915.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    68.49.Sf
    68.55.ag
    81.40.Ef
    Opis:
    Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1061-1066
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Inelastic X-Ray Scattering Studies of Phonon Dispersion in PbTe and (Pb,Cd)Te Solid Solution
    Autorzy:
    Kuna, R.
    Minikayev, R.
    Trzyna, M.
    Gas, K.
    Bosak, A.
    Szczerbakow, A.
    Petit, S.
    Łażewski, J.
    Szuszkiewicz, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398584.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    63.20.D-
    68.43.-h
    68.49.Sf
    Opis:
    PbTe and its solid solution (Pb,Cd)Te containing 2% of CdTe and PbTe grown by self-selecting vapour growth technique were investigated by inelastic X-ray scattering using synchrotron radiation. The ID28 beamline at ESRF with the incident photon energy of 17794 eV and the energy resolution of 3 meV was applied for that purpose. The measurements were performed at room temperature along [001]-type high symmetry direction in the Brillouin zone. In spite of a very low energy of phonon branches they can be determined by inelastic X-ray scattering with a high accuracy. The transversal acoustic phonon dispersion obtained by inelastic X-ray scattering corresponds well to those resulting from inelastic neutron scattering measurements and ab initio calculations. Apart from expected structures corresponding to the bulk phonons an additional scattering related to the crystal surface properties was observed in the inelastic X-ray scattering spectra. The analysis performed with the use of secondary ion mass spectroscopy technique demonstrated a presence of a thin oxide layer at sample surfaces.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1251-1254
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of Ti, V and Their Oxides-Based Thin Films in the Search for Hydrogen Storage Materials
    Autorzy:
    Tarnawski, Z.
    Zakrzewska, K.
    Kim-Ngan, N.-T.
    Krupska, M.
    Sowa, S.
    Drogowska, K.
    Havela, L.
    Balogh, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1401913.pdf
    Data publikacji:
    2015-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Cd
    68.49.-h
    61.05.C-
    68.60.-p
    Opis:
    Thin film series consisting of Ti, V, TiO₂ and V₂O₅ layer with different layer geometries, sequences and thicknesses have been prepared by the sputtering technique. The hydrogen depth profile of selected films upon hydrogen charging at 1 bar and/or hydrogenation at pressure up to 102 bar was determined by using secondary ion mass spectrometry and nuclear reaction analysis using a N-15 beam. The highest hydrogen storage with a concentration up to 50 at.% was found in the pure Ti and Ti-contained layer, while it amounts to around 30% in the metallic Ti-V-Ni layer. Hydrogen can diffuse through the TiO₂ layer without accumulation, but can be stored in the VO₂ layer in some cases. Hydrogen can remove the preferential Ti orientation in the films and induce a complete transition of V₂O₅ into VO₂ in the films.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 3; 431-439
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering
    Autorzy:
    Borysiewicz, M. A.
    Pasternak, I.
    Dynowska, E.
    Jakieła, R.
    Kolkovski, V.
    Dużyńska, A.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048109.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.15.Cd
    61.05.cp
    68.37.Hk
    68.37.Ps
    68.49.Sf
    78.55.Et
    Opis:
    ZnO (0001) layers on sapphire (0001) substrates were fabricated by means of high temperature high vacuum magnetron sputtering. The layers were deposited onto a thin MgO buffer and a low temperature ZnO nucleation layer, which is a technology commonly used in MBE ZnO growth. This paper reports on using this technology in the sputtering regime.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 686-688
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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