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Wyszukujesz frazę "IGBT transistor" wg kryterium: Wszystkie pola


Wyświetlanie 1-3 z 3
Tytuł:
Compact nanosecond pulse generator based on IGBT and spark gap cooperation
Autorzy:
Achour, Y.
Starzyński, J.
Łasica, A.
Powiązania:
https://bibliotekanauki.pl/articles/202157.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
pulsed power
nanosecond generator
Isolated Gate Bipolar Transistor (IGBT)
spark gap
avalanche mode Bipolar Junction Transistor
Opis:
The present paper describes a new architecture of a high-voltage solid-state pulse generator. This generator combines the two types of energy storage systems: inductive and capacitive, and consequently operates two types of switches: opening and closing. For the opening switch, an isolated gate bipolar transistor (IGBT) was chosen due to its interesting characteristics in terms of controllability and robustness. For the closing switch, two solutions were tested: spark-gap (SG) for a powerful low-cost solution and avalanche mode bipolar junction transistor (BJT) for a fully semiconductor structure. The new architecture has several advantages: simple structure and driving system, high and stable controllable repetition rate that can reach 1 kHz, short rising time of a few nanoseconds, high gain and efficiency, and low cost. The paper starts with the mathematical analysis of the generator operation followed by numerical simulation of the device. Finally add a comma the results were confirmed by the experimental test with a prototype generator. Additionally, a comparative study was carried out for the classical SG versus the avalanche mode BJT working as a closing switch.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 2; 377-388
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs
Autorzy:
Górecki, K.
Górecki, P.
Powiązania:
https://bibliotekanauki.pl/articles/220969.pdf
Data publikacji:
2015
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
IGBT
thermal resistance
measurements
transistor
semiconductor devices
Opis:
In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations.
Źródło:
Metrology and Measurement Systems; 2015, 22, 3; 455-464
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of the Averaged Model of the Diode-transistor Switch for Modelling Characteristics of a Boost Converter with an IGBT
Autorzy:
Górecki, Paweł
Powiązania:
https://bibliotekanauki.pl/articles/226814.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
DC-DC converter
IGBT
boost converter
averaged model
diode-transistor switch
modelling
SPICE
Opis:
DC-DC converters are popular switch-mode electronic circuits used in power supply systems of many electronic devices. Designing such converters requires reliable computation methods and models of components contained in these converters, allowing for accurate and fast computations of their characteristics. In the paper, a new averaged model of a diode-transistor switch containing an IGBT is proposed. The form of the developed model is presented. Its accuracy is verified by comparing the computed characteristics of the boost converter with the characteristics computed in SPICE using a transient analysis and literature models of a diode and an IGBT. The obtained results of computations proved the usefulness of the proposed model.
Źródło:
International Journal of Electronics and Telecommunications; 2020, 66, 3; 555-560
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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