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    Wyświetlanie 1-3 z 3
    Tytuł:
    Formation of Cr ohmic contact on graphitized 6H-SiC(0001) surface
    Autorzy:
    Grodzicki, M
    Mazur, P
    Wasielewski, R
    Ciszewski, A
    Powiązania:
    https://bibliotekanauki.pl/articles/173424.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    silicon carbide
    chromium
    electric contacts
    graphitization
    Opis:
    Ohmic electrical contacts were formed at room temperature on n-type, Si-oriented 6H-SiC substrates, with Cr layers vapor-deposited under ultra-high vacuum conditions on the samples being graphitized prior to the deposition. The contacts reveal a very good linearity of the local I–V characteristics. This method of ohmic contact formation does not require the use of samples with high doping concentration and the application of high-temperature annealing during the processing of contacts. Results of characterization of the contacts and of the in situ graphitization process of the SiC substrates, obtained by X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and atomic force microscopy (AFM) with conducting tip, are given in this paper.
    Źródło:
    Optica Applicata; 2013, 43, 1; 91-98
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Extended T-type inverter
    Autorzy:
    Rąbkowski, J.
    Kopacz, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1193496.pdf
    Data publikacji:
    2018
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    multilevel inverter
    T-type inverter
    boost converter
    silicon carbide
    Opis:
    This paper presents a new concept for a power electronic converter – the extended T-type (eT) inverter, which is a combination of a three-phase inverter and a three-level direct current (dc)/dc converter. The novel converter shows better performance than a comparable system composed of two converters: a T-type inverter and a boost converter. At first, the three-level dc/dc converter is able to boost the input voltage but also affects the neutral point potential. The operation principles of the eT inverter are explained and a simulation study of the SiC-based 6 kVA system is presented in this paper. Presented results show a serious reduction of the DC-link capacitors and the input inductor. Furthermore, suitable SiC power semiconductor devices are selected and power losses are estimated using Saber software in reference to a comparative T-type inverter. According to the simulations, the 50 kHz/6 kVA inverter feed from the low voltage (250 V) shows <2.5% of power losses in the suggested SiC metal oxide–semiconductor field-effect transistors (MOSFETs) and Schottky diodes. Finally, a 6 kVA laboratory model was designed, built and tested. Conducted measurements show that despite low capacitance (2 × 30 μF/450 V), the neutral point potential is balanced, and the observed efficiency of the inverter is around 96%.
    Źródło:
    Power Electronics and Drives; 2018, 3, 38; 55-64
    2451-0262
    2543-4292
    Pojawia się w:
    Power Electronics and Drives
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Towards a viable method of reusing silicon carbide. Physicochemical analyses in the studies on the industrial application of the material
    Autorzy:
    Niemczyk-Wojdyla, Anna
    Fornalczyk, Agnieszka
    Willner, Joanna
    Zawisz, Rafał
    Powiązania:
    https://bibliotekanauki.pl/articles/2032847.pdf
    Data publikacji:
    2021
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    silicon carbide
    X-ray spectroscopy
    Acheson process
    węglik krzemu
    spektroskopia rentgenowska
    proces Achesona
    Opis:
    The paper presents an investigation on the feasibility of recovery of the highly valuable silicon carbide (SiC) from the slurry waste generated from silicon wafer production in the photovoltaic and semiconductor industry. Compared to the other techniques of recycling, a facile and low-cost method of waste treatment via heat drying followed by low-energy mixing in a shaker mixer was proposed. As the result of the treatment, the slurry waste was converted into a powdered form with dominant content of SiC. Separated SiC material was characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray powder diffraction, and sieve analysis. In addition, analyses of the bulk density, moisture content and melting test were carried out. As was confirmed by the physicochemical analyses, the dominant sieve fraction was in the range of 0.1-0.06 mm, the purity level was a minimum 99% mass of SiC, the moisture content - 0.3%, the bulk density - 1.3 g/cm3. The physicochemical characteristics of the material were crucial for understanding the material performance, assessment of the material quality and determining the perspective directions of the industrial application. The studies revealed that the material exhibited a high application potential as abrasive, especially in abrasive grinding and waterjet cutting.
    Źródło:
    Environment Protection Engineering; 2021, 47, 4; 43-52
    0324-8828
    Pojawia się w:
    Environment Protection Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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