Temat: annealing - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Post-implantation defects instability under 1 MeV electron irradiation in GaAs
Autorzy:: Warchoł, S.
Rzewuski, H.
Krynicki, J.
Grötzschel, R.
Powiązania:: https://bibliotekanauki.pl/articles/146724.pdf
Data publikacji:: 2000
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: electron annealing
GaAs
implantation
Opis:: The influence of 1 MeV electron irradiation on the stability of post-implantation defects in GaAs has been investigated. The n-type GaAs wafers of <100> orientation were implanted with 150 keV As+ ions below the amorphization threshold at RT using the implantation dose of 2×1013 ions cm–2 at a constant flux of 0.1 žA cm–2. Then the implanted samples were irradiated with a scanned beam of 1 MeV electrons from a Van de Graaff accelerator in a dose range (0.5–5.0)×1017 cm–2 at 320 K. RBS and channeling spectroscopy of 1.7 MeV 4He+ ions were used to determine the depth distribution of defect concentration before and after 1 MeV irradiations. New results of an "oscillatory" behaviour of the damage level as a function of 1 MeV electron fluence are presented.
Źródło:: Nukleonika; 2000, 45, 4; 225-228
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Angular dependence of post-implantation damage recovery under 1 MeV electron irradiation in GaAs
Autorzy:: Warchoł, S.
Rzewuski, H.
Krynicki, J.
Grotzschel, R.
Powiązania:: https://bibliotekanauki.pl/articles/147146.pdf
Data publikacji:: 2002
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: electron annealing
GaAs
implantation
Opis:: The angular dependence of post-implantation defects removal in GaAs irradiated with 1 MeV electrons from a Van de Graaff accelerator has been investigated. The possible way of enhancing defect annealing consists in ionization created by electron irradiation. In this paper new results of a damage level behaviour dependent on 1 MeV electron beam angle irradiation are presented. GaAs single crystals of <100> orientation were implanted with 150 keV As+ ions at RT and then irradiated with a scanning beam of 1 MeV electrons at some selected angles. Rutheford Backscattering Spectroscopy (RBS) of 1.7 MeV 4He+ ions were used to determine the depth distribution of defect concentration before and after electron irradiation. The results relate clearly the ionization intensity created by the electron beam with angle of incidence with respect to the GaAs <100> orientation.
Źródło:: Nukleonika; 2002, 47, 1; 19-21
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Post-recoil thermal annealing study of 177Lu, 169Yb, 175Yb, 166Ho and 153Sm in different organometallic compounds
Autorzy:: Nassan, L.
Achkar, B.
Yassine, T.
Powiązania:: https://bibliotekanauki.pl/articles/146678.pdf
Data publikacji:: 2011
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: thermal annealing
lutetium
ytterbium
holmium
samarium
Opis:: Post-recoil thermal annealing study at different temperatures for different intervals of time of the recoiled isotopes 169Yb, 175Yb, 177Lu, 166Ho, and 153Sm resulting from the nuclear reactions 168Yb(n,gamma)169Yb, 174Yb(n,gamma)175Yb and 176Yb(n,gamma)177Yb → 177Lu, 165Ho(n,gamma)166Ho, 152Sm(n,gamma)153Sm, respectively in different organometallic compounds Yb(OCC(CH3)3CHCOC(CH3)3)3, Ho(OCC(CH3)3CHCOC(CH3)3)3, (C5H5)3Ho, and (C5H5)3Sm were carried out. The thermal annealing behaviors of 177Lu, 169Yb, 175Yb, 166Ho, and 153Sm were found to be different in the compounds under investigation. The differences in the patterns of the obtained isothermal curves were discussed. Depending on the post- -recoil thermal annealing manner the reactions taking place during thermal annealing were suggested.
Źródło:: Nukleonika; 2011, 56, 2; 185-190
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Ion implantation followed by laser/pulsed plasma/ion beam annealing : a new approach to fabrication of superconducting MgB2 thin films
Autorzy:: Piekoszewski, J.
Werner, Z.
Barlak, M.
Kolitsch, A.
Szymczyk, W.
Powiązania:: https://bibliotekanauki.pl/articles/146817.pdf
Data publikacji:: 2008
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: MgB2
superconducting films
pulsed plasma annealing
Opis:: The paper presents a new approach to formation of superconducting MgB2 thin films: ion implantation followed by annealing in an unconventional second step treatment using pulsed laser, plasma, or ion beams. Merits and drawbacks of individual approaches are discussed.
Źródło:: Nukleonika; 2008, 53, 1; 7-10
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: The influence of thermal annealing on structure and oxidation of iron nanowires
Autorzy:: Krajewski, M.
Brzózka, K.
Górka, B.
Lin, W.-S.
Lin, H. -M.
Szumiata, T
Gawroński, M.
Wasik, D.
Powiązania:: https://bibliotekanauki.pl/articles/148838.pdf
Data publikacji:: 2015
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: amorphous iron and iron oxides
iron nanowires
Mössbauer spectroscopy
Raman spectroscopy
thermal annealing
Opis:: Raman spectroscopy as well as Mössbauer spectroscopy were applied in order to study the phase composition of iron nanowires and its changes, caused by annealing in a neutral atmosphere at several temperatures ranging from 200°C to 800°C. As-prepared nanowires were manufactured via a simple chemical reduction in an external magnetic fi eld. Both experimental techniques proved formation of the surface layer covered by crystalline iron oxides, with phase composition dependent on the annealing temperature (Ta). At higher Ta, hematite was the dominant phase in the nanowires.
Źródło:: Nukleonika; 2015, 60, 1; 87-91
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

Artykuł

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