Temat: subthreshold - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: A model of partially-depleted SOI MOSFETs in the subthreshold range
Autorzy:: Tomaszewski, D.
Łukasiak, L.
Jakubowski, A.
Domański, K.
Powiązania:: https://bibliotekanauki.pl/articles/308425.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI MOSFET
subthreshold range
floating body
transconductance
Opis:: A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusion-based conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the "pinch-off" region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 61-64
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime
Autorzy:: Osthaug, J.
Fjeldly, T.A.
Iniguez, B.
Powiązania:: https://bibliotekanauki.pl/articles/308041.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: sub-100 nm MOSFET
two-dimensional device modeling
conformal mapping
threshold voltage
subthreshold regime
leakage current
Opis:: Closed-form 2D modeling of deep-submicron and sub-100 nm MOSFETs is explored using a conformal mapping technique where the 2D Poisson equation in the depletion regions is separated into a 1D long-channel case and a 2D Laplace equation. The 1D solution defines the boundary potential values for the Laplacian, which in turn provides a 2D correction of the channel potential. The model has been tested for classical MOSFETs with gate lengths in the range 200-250 nm, and for a super-steep retrograde MOSFET with a gate length of 70 nm. With a minimal parameter set, the present modeling reproduces both qualitatively and quantitatively the experimental data obtained for such devices.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 70-79
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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