Autor: Kudła, D. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Photoelectric measurements of the local values of the effective contact potential difference in the MOS structure
Autorzy:: Kudła, A.
Przewłocki, H.
Brzezińska, D.
Borowicz, L.
Powiązania:: https://bibliotekanauki.pl/articles/308842.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MIS structure
photoelectrical methods
internal photoemission
contact potential difference
Opis:: We have shown that using focused UV laser beam in photoelectric methods it is possible to measure local phi MS values over the gate area of a single MOS structure. The phi MS distribution is such that its values are highest far away from the gate edges regions, lower in the vicinity of gate edges and still lower in the vicinity of gate corners. Examples of measurement results and description of the measurement system are presented. The dependence of the phi MS value on the exposure time and the power density of UV light is discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 112-114
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Variability of the local phi MS values over the gate area of MOS devices
Autorzy:: Przewłocki, H. M.
Kudła, A.
Brzezińska, D.
Massoud, H. Z.
Powiązania:: https://bibliotekanauki.pl/articles/308803.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MOS structure
photoelectric measurements
electrical parameters
mechanical stress
Opis:: The local value distributions of the effective contact potential difference (ECPD or the phi MS factor) over the gate area of Al-SiO2-Si structures were investigated for the first time. A modification of the photoelectric phi MS measurement method was developed, which allows determination of local values of this parameter in different parts of metaloxide-semiconductor (MOS) structures. It was found that the phi MS distribution was such, that its values were highest far away from the gate edge regions (e.g., in the middle of a square gate), lower in the vicinity of gate edges and still lower in the vicinity of gate corners. These results were confirmed by several independent photoelectric and electrical measurement methods. A model is proposed of this distribution in which the experimentally determined phi MS (x; y) distributions, found previously, are attributed to mechanical stress distributions in MOS structures. Model equations are derived and used to calculate phi MS (x; y) distributions for various structures. Results of these calculations remain in agreement with experimentally obtained distributions. Comparison of various characteristics calculated using the model with the results of photoelectric and electrical measurements of a wide range of Al-SiO2-Si structures support the validity of the model.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 34-44
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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