Autor: Jakubowski, K. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Silicon everywhere
Autorzy:: Jakubowski, K. J.
Powiązania:: https://bibliotekanauki.pl/articles/308053.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: krzem
krzemionka
kwarc
struktura
silicon
silica
quartz
geo-chemical structure
Opis:: The paper discusses the ubiquity of silicon and its compounds in the geo-chemical structure of the Earth. The dominant role of mineral oxidized compounds of silicon as the building material of the primordial magma, metamorphic and sedimentary rocks is also shown. The reader's attention is also attracted to the numerous varieties of silicon compounds valued for their intrinsic beauty. Finally, methods of silicon production for electronics purposes are briefly addressed.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 3-6
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: A model of partially-depleted SOI MOSFETs in the subthreshold range
Autorzy:: Tomaszewski, D.
Łukasiak, L.
Jakubowski, A.
Domański, K.
Powiązania:: https://bibliotekanauki.pl/articles/308425.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI MOSFET
subthreshold range
floating body
transconductance
Opis:: A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusion-based conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the "pinch-off" region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 61-64
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Piezoresistive sensors for atomic force microscopy - numerical simulations by means of virtual wafer fab
Autorzy:: Dębski, T.
Barth, W.
Rangelow, I.W.
Domański, K.
Tomaszewski, D.
Grabiec, P.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/307644.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: atomic force microscopy (AFM)
piezoresistive sensors
technology simulation
technology characterization
Opis:: An important element in microelectronics is the comparison of the modelling and measurements results of the real semiconductor devices. Our paper describes the final results of numerical simulation of a micromechanical process sequence of the atomic force microscopy (AFM) sensors. They were obtained using the virtual wafer fab (VWF) software, which is used in the Institute of Electron Technology (IET). The technology mentioned above is used for fabrication of the AFM cantilevers, which has been designed for measurement and characterization of the surface roughness, the texturing, the grain size and the hardness. The simulation are very useful in manufacturing other microcantilever sensors.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 35-39
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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