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    Wyświetlanie 1-6 z 6
    Tytuł:
    Signal processing for time resolved photoluminescence spectroscopy
    Autorzy:
    Grodecki, Kacper
    Murawski, Krzysztof
    Rutkowski, Jarosław
    Kowalewski, Andrzej
    Sobieski, Jan
    Powiązania:
    https://bibliotekanauki.pl/articles/1818197.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    epitaxy
    HgCdTe
    photoluminescence
    time-resolved photoluminescence
    Opis:
    Accurate determination of material parameters, such as carrier lifetimes and defect activation energy, is a significant problem in the technology of infrared detectors. Among many different techniques, using the time resolved photoluminescence spectroscopy allows to determine the narrow energy gap materials, as well as their time dynamics. In this technique, it is possible to observe time dynamics of all processes in the measured sample as in a streak camera. In this article, the signal processing for the above technique for Hg1-xCdxTe with a composition x of about 0.3 which plays an extremely important role in the mid-infrared is presented. Machine learning algorithms based on the independent components analysis were used to determine components of the analyzed data series. Two different filtering techniques were investigated. In the article, it is shown how to reduce noise using the independent components analysis and what are the advantages, as well as disadvantages, of selected methods of the independent components analysis filtering. The proposed method might allow to distinguish, based on the analysis of photoluminescence spectra, the location of typical defect levels in HgCdTe described in the literature.
    Źródło:
    Opto-Electronics Review; 2021, 29, 3; 91--96
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Signal processing for time resolved photoluminescence spectroscopy
    Autorzy:
    Grodecki, Kacper
    Murawski, Kkrzysztor
    Rutkowski, Jarosław
    Kowalewski, Andrzej
    Sobieski, Jan
    Powiązania:
    https://bibliotekanauki.pl/articles/1818200.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    epitaxy
    HgCdTe
    photoluminescence
    time-resolved photoluminescence
    Opis:
    Accurate determination of material parameters, such as carrier lifetimes and defect activation energy, is a significant problem in the technology of infrared detectors. Among many different techniques, using the time resolved photoluminescence spectroscopy allows to determine the narrow energy gap materials, as well as their time dynamics. In this technique, it is possible to observe time dynamics of all processes in the measured sample as in a streak camera. In this article, the signal processing for the above technique for Hg1-xCdxTe with a composition x of about 0.3 which plays an extremely important role in the mid-infrared is presented. Machine learning algorithms based on the independent components analysis were used to determine components of the analyzed data series. Two different filtering techniques were investigated. In the article, it is shown how to reduce noise using the independent components analysis and what are the advantages, as well as disadvantages, of selected methods of the independent components analysis filtering. The proposed method might allow to distinguish, based on the analysis of photoluminescence spectra, the location of typical defect levels in HgCdTe described in the literature.
    Źródło:
    Opto-Electronics Review; 2021, 29, 3; 91--96
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural, morphological and photoluminescent properties of annealed ZnO thin layers obtained by the rapid sol-gel spin-coating method
    Autorzy:
    Sypniewska, Małgorzata
    Szczesny, Robert
    Popielarski, Paweł
    Strzałkowski, Karol
    Derkowska-Zielinska, Beata
    Powiązania:
    https://bibliotekanauki.pl/articles/1818231.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    FTIR and Raman spectroscopies
    photoluminescence
    SEM
    XRD
    ZnO thin films
    Opis:
    ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573-873 K. Photoluminescence was carried out in the temperature range of 20-300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.
    Źródło:
    Opto-Electronics Review; 2020, 28, 4; 182--190
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural, morphological and photoluminescent properties of annealed ZnO thin layers obtained by the rapid sol-gel spin-coating method
    Autorzy:
    Sypniewska, Małgorzata
    Szczesny, Robert
    Popielarski, Paweł
    Strzalkowski, Karol
    Derkowska-Zielinska, Beata
    Powiązania:
    https://bibliotekanauki.pl/articles/1818237.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    FTIR and Raman spectroscopies
    photoluminescence
    SEM
    XRD
    ZnO thin films
    Opis:
    ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573-873 K. Photoluminescence was carried out in the temperature range of 20-300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.
    Źródło:
    Opto-Electronics Review; 2020, 28, 4; 182--190
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural, morphological and photoluminescent properties of Nd-coated silicon nanostructures
    Autorzy:
    Mefoued, Amine
    Mahmoudi, Bedra
    Benrekaa, Nasser
    Tiour, Faiza
    Menari, Hamid
    Naitbouda, Abdelyamine
    Manseri, Amar
    Brik, Afaf
    Mezghiche, Salah
    Debbab, Moustafa
    Powiązania:
    https://bibliotekanauki.pl/articles/2204154.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    silicon nanostructures
    silicon nitride
    neodymium
    SEM/EDS
    SIMS
    Raman spectroscopy
    photoluminescence
    Opis:
    The structural, morphological and photoluminescent properties of thermally evaporated neodymium oxide (Nd₂O₃) thin films deposited onto nanostructured silicon (Si-ns) are reported. Si-ns embedded in silicon nitride (SiN) thin films are prepared by plasma-enhanced chemical vapour deposition (PECVD). SiN and Nd₂O₃ thin films uniformity and Si-ns formation are confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The presence of neodymium (Nd), silicon (Si), oxygen (O), and phosphorus (P) is investigated by energy-dispersive spectroscopy (EDS) and secondary ion mass spectrometry (SIMS). Post-annealing SIMS profile indicates an improvement of the homogeneity of activated P distribution in Si bulk. The X-ray diffraction (XRD) combined with Raman spectroscopy and Fourier-transform infrared spectroscopy (FTIR) have been employed to determine amorphous silicon (a-Si), crystalline silicon (c-Si), Nd₂O₃ and SiN phases present in the Nd₂O₃-SiN bilayers with their corresponding chemical bonds. After annealing, a Raman shift toward lower wavenumbers is recorded for the Si peak. XPS data reveal the formation of Nd₂O₃ thin films with Nd-O bonding incorporating trivalent Nd ions (Nd3+). Strong room-temperature photoluminescence is recorded in the visible light range from the Si-ns. Nd-related photoluminescent emission in the near infrared (NIR) range is observed at wavelengths of 1025-1031 nm and 1083 nm, and hence is expected to improve light harvesting of Si-based photovoltaic devices.
    Źródło:
    Opto-Electronics Review; 2023, 31, 1; art. no. e145096
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A probabilistic approach for approximation of optical and opto-electronic properties of an opto-semiconductor wafer under consideration of measuring inaccuracy and model uncertainty
    Autorzy:
    Stroka, Stefan M.
    Heumann, Christian
    Suhrke, Fabian
    Meindl, Kathrin
    Powiązania:
    https://bibliotekanauki.pl/articles/2204192.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    Gaussian process regression
    machine learning
    uncertainty quantification
    photoluminescence
    opto-semiconductor wafer measuring
    Opis:
    This paper presents a probabilistic machine learning approach to approximate wavelength values for unmeasured positions on an opto-semiconductor wafer after epitaxy. Insufficient information about optical and opto-electronic properties may lead to undetected specification violations and, consequently, to yield loss or may cause product quality issues. Collection of information is restricted because physical measuring points are expensive and in practice samples are only drawn from 120 specific positions. The purpose of the study is to reduce the risk of uncertainties caused by sampling and measuring inaccuracy and provide reliable approximations. Therefore, a Gaussian process regression is proposed which can determine a point estimation considering measuring inaccuracy and further quantify estimation uncertainty. For evaluation, the proposed method is compared with radial basis function interpolation using wavelength measurement data of 6-inch InGaN wafers. Approximations of these models are evaluated with the root mean square error. Gaussian process regression with radial basis function kernel reaches a root mean square error of 0.814 nm averaged over all wafers. A slight improvement to 0.798 nm could be achieved by using a more complex kernel combination. However, this also leads to a seven times higher computational time. The method further provides probabilistic intervals based on means and dispersions for approximated positions.
    Źródło:
    Opto-Electronics Review; 2023, 31, 2; art. no. e145863
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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