Temat: Si - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Electron mobility and drain current in strained-Si MOSFET
Autorzy:: Walczak, J.
Majkusiak, B.
Powiązania:: https://bibliotekanauki.pl/articles/308631.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: electron mobility
strained-Si MOSFET
Opis:: Electron mobility and drain current in a strained-Si MOSFET have been calculated and compared with the mobility and drain current obtained for the relaxed material. In the first step, our mobility model has been calibrated to the "universal mobility" according to the available experimental data for unstrained Si MOSFETS. Then, employing the mobility parameters derived in the calibration process, electron mobility and the drain current have been calculated for strained-Si MOSFETs.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 84-87
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: On possibility to extend the operation temperature range of SOI sensors with polysilicon piezoresistors
Autorzy:: Druzhinin, A.
Lavitska, E.
Maryamova, I.
Kogut, I.
Khoverko, Y.
Powiązania:: https://bibliotekanauki.pl/articles/307642.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI
mechanical sensors
poly-Si piezoresistor
ZMR
Opis:: The aim of this work was to study the possibilities of developing mechanical sensors with poly-Si piezoresistors on insulating substrate for operation in different temperature ranges (low, elevated and high temperatures). Laser recrystallization is used as a technological tool to adjust the electrical and piezoresistive parameters of the polysilicon layer. For this purpose a set of studies including numerical simulation and experimental work has been carried out. The main three directions of the studies are considered: problems of thermal stabilization of the pressure sensor performance at elevated and high temperatures; problem of sensor operation at cryogenic temperatures; development of a multifunctional pressure-temperature sensor.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 40-45
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Impact of Crosstalk into High Resistivity Silicon Substrate on the RF Performance of SOI MOSFET
Autorzy:: Ali, K. B.
Neve, C. R.
Gharsallah, A.
Raskin, J. P.
Powiązania:: https://bibliotekanauki.pl/articles/308378.pdf
Data publikacji:: 2010
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: crosstalk
high resistivity Si
mixing products
passivation layer
polysilicon
Opis:: Crosstalk propagation through silicon substrate is a serious limiting factor on the performance of the RF devices and circuits. In this work, substrate crosstalk into high resistivity silicon substrate is experimentally analyzed and the impact on the RF behavior of silicon-on-insulator (SOI) MOS transistors is discussed. The injection of a 10 V peak-to-peak single tone noise signal at a frequency of 3 MHz ( fnoise) generates two sideband tones of ?56 dBm separated by fnoise from the RF output signal of a partially depleted SOI MOSFET at 1 GHz and 4.1 dBm. The efficiency of the introduction of a trap-rich polysilicon layer located underneath the buried oxide (BOX) of the high resistivity (HR) SOI wafer in the reduction of the sideband noise tones is demonstrated. An equivalent circuit to model and analyze the generation of these sideband noise tones is proposed.
Źródło:: Journal of Telecommunications and Information Technology; 2010, 4; 93-100
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Ellipsometric spectroscopy studies of compaction and decompaction of Si-SiO2 systems
Autorzy:: Rzodkiewicz, W.
Panas, A.
Powiązania:: https://bibliotekanauki.pl/articles/308667.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: Si-SiO2 system
density
refractive index
spectroscopic ellipsometry
Opis:: The influence of the strain on the optical properties of Si-SiO2 system has been investigated by spectroscopic ellipsometry (SE), interferometry and weighing methods. Subtle changes of densification (compaction degree) in silicon dioxide layers on silicon substrates have been determined by weight technique (relying on measurements of the silicon dioxide layer mass and calculations of the volume). Elastic stress in the oxide layers has been measured by Fizeau fringes image analysis method. A comparison is made between the density of the silicon dioxide (r) and the results of calculations made using r = f = (n) relations (where n is the refractive index) given in the literature.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 44-48
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Effects of stress annealing on the electrical and the optical properties of MOS devices
Autorzy:: Rzodkiewicz, W.
Kudła, A.
Rawicki, Z.
Przewłocki, H. M.
Powiązania:: https://bibliotekanauki.pl/articles/308838.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: stress
MOS
Si-SiO2 system
electrical parameters
refractive index
Opis:: In this paper we show the results of a study of the effects of high-temperature stress annealing in nitrogen on the refraction index of SiO2 layers and electrical properties in metal-oxide-semiconductor (MOS) devices. We have experimentally characterized the dependence of the reduced effective contact potential difference (ECPD), the effective oxide charge density (Neff), and the mid-gap interface trap density (Dit) on the annealing conditions. Subsequently, we have correlated such properties with the dependence of the refraction index and oxide stress on the annealing conditions and silicon dioxide thickness. Also, the dependence of mechanical stress in the Si-SiO2 system on the oxidation and annealing conditions has been experimentally determined. We consider the contributions of the thermal-relaxation and nitrogen incorporation processes in determining changes in the SiO2 layer refractive index and the electrical properties with annealing time. This description is consistent with other annealing studies carried out in argon, where only the thermal relaxation process is present.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 115-119
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities
Autorzy:: Głuszko, G.
Łukasiak, L.
Kilchytska, V.
Chung, T. M.
Olbrechts, B.
Flandrie, D.
Raskin, J. P.
Powiązania:: https://bibliotekanauki.pl/articles/308669.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: charge-pumping
electrical characterization
interface traps
SOI
water bonding
Si layer transfer
Opis:: The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activation step, the quality of the bonded interface is remarkably good. Good agreement between values of front-interface threshold voltage determined from CP and I-V measurements is obtained.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 61-66
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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