Temat: Miś - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectris
Autorzy:: Janik, T.
Jakubowski, A.
Majkusiak, B.
Korwin-Pawłowski, M.
Powiązania:: https://bibliotekanauki.pl/articles/308423.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MIS structures
ultrathin dielectrics
high-k dielectrics
Opis:: Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures based on the transfer matrix approach were carried out. They show contribution of different components of this current in MIS structures with best known high-k dielectrics such as Ta2O5 and TiO2. The comparison of the gate leakage current in MIS structures with SiO2 layer as well Ta2O5 and TiO2 layers is presented as well. Additionally, the minimum Si electron affinity to a gate dielectric which allows to preserve given level of the gate leakage current is proposed.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 65-69
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Photoelectric measurements of the local values of the effective contact potential difference in the MOS structure
Autorzy:: Kudła, A.
Przewłocki, H.
Brzezińska, D.
Borowicz, L.
Powiązania:: https://bibliotekanauki.pl/articles/308842.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MIS structure
photoelectrical methods
internal photoemission
contact potential difference
Opis:: We have shown that using focused UV laser beam in photoelectric methods it is possible to measure local phi MS values over the gate area of a single MOS structure. The phi MS distribution is such that its values are highest far away from the gate edges regions, lower in the vicinity of gate edges and still lower in the vicinity of gate corners. Examples of measurement results and description of the measurement system are presented. The dependence of the phi MS value on the exposure time and the power density of UV light is discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 112-114
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Reliability of MIS transistors with plasma deposited Al2O3 gate dielectric film
Autorzy:: Szmidt, J.
Werbowy, A.
Dusiński, E.
Zdunek, K.
Powiązania:: https://bibliotekanauki.pl/articles/308421.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MIS transistor
reliability
Al2O3 films
RPP method
Opis:: The paper presents the parameters of MIS transistors with plasma deposited thin film aluminum oxide gate insulator. Al2O3 films were synthesized by means of the low-energy, low-temperature reactive pulse plasma (RPP) method. Investigated transistors, with channel width to length (W/L) ratios of 200/10 [žm/žm] and 200/20 [žm/žm] were manufactured in a standard microelectronic technological laboratory. In order to determine the most important parameters of produced devices there were measured their electrical characteristics. The distribution of the threshold voltage values was studied on a representative set of over two hundred structures.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 70-75
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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