Temat: fluoride - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Minimizing fluoride by coagulation on iron(III) hydroxide in drinkable water from Oasis region of Algeria
Autorzy:: Atia, D.
Hoggui, A.
Powiązania:: https://bibliotekanauki.pl/articles/411515.pdf
Data publikacji:: 2013
Wydawca:: Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:: Oasis region
minimizing fluoride
fluorosis
coagulation
drinkable water
Opis:: The drinkable water in oasis region of Algeria contains high quantity of fluoride which causes dental fluorosis. To reduce fluoride, we have chosen a sample with the biggest content of fluoride among many sources in order to coagulate it with FeSO4·H2O. After that the parameters influencing (concentration, pH, temperature) are studied to choose the best conditions for better reduction.
Źródło:: International Letters of Chemistry, Physics and Astronomy; 2013, 7, 1; 23-29
2299-3843
Pojawia się w:: International Letters of Chemistry, Physics and Astronomy
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Fabrication and Optoelectronic properties of Fluoride tin oxides/porous silicon/p-Silicon heterojunction
Autorzy:: Hadi, H. A.
Powiązania:: https://bibliotekanauki.pl/articles/411926.pdf
Data publikacji:: 2014
Wydawca:: Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:: porous silicon
electrochemical etching
spray pyrolysis
fluoride-doped tin oxide film
nanostructures
SEM
AFM
photodetector
Opis:: In this paper, formation of a nanostructure semi transparence fluoride tin oxides (FTO) by spray pyrolysis technique on porous silicon PS layer. Porous silicon PS layer was prepared by anodization of p-type silicon wafers to fabricate of the UV- Visible Fluoride-doped tin oxide /Porous silicon /p-Si heterojunction photodetector. Optical properties of FTO thin films were measured. The optical band gap of 3.77 eV for SnO₂ : F for film was deduced. From (I-V) and (C-V) measurements, the barrier Ø_B height for FTO/PS diode was of 0.77, and the built in voltage V_bi, which was of 0.95 V. External quantum efficiency was 55 % at 500 nm which corresponding to peak responsivity of 1.15 A/W at 1 V bias. The PS band gap in the vicinity of PS/c-Si heterojunction was 1.38 eV.
Źródło:: International Letters of Chemistry, Physics and Astronomy; 2014, 17, 2; 142-152
2299-3843
Pojawia się w:: International Letters of Chemistry, Physics and Astronomy
Dostawca treści:: Biblioteka Nauki

Artykuł

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