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Wyszukujesz frazę "Simulation Modelling" wg kryterium: Temat

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    Wyświetlanie 1-6 z 6
    Tytuł:
    Heat transfer simulations in the frequency domain with the application of thermal influence coefficients method
    Autorzy:
    Gnidzińska, K.
    Jabłoński, G.
    Napieralski, A.
    De Mey, G
    Powiązania:
    https://bibliotekanauki.pl/articles/397746.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    thermal modelling
    thermal simulation
    AC
    alternating current
    modelowanie cieplne
    symulacja termiczna
    prąd przemienny
    Opis:
    In this paper an extension of thermal influence coefficients method to frequency domain has been presented. The method allowed the steady-state analysis of three-dimensional heat flow in multilayered structures. The presented modelling is based on Fourier and Hankel transforms, two-port network theory and correction coefficients for close-area distances, allowing emulation of finite heat sources by infinitesimal ones.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2013, 4, 4; 164-169
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    VHDL-AMS Models for Current Conveyor Based Monolithic Operational Amplifiers
    Autorzy:
    Pandiev, Ivailo M.
    Powiązania:
    https://bibliotekanauki.pl/articles/398082.pdf
    Data publikacji:
    2018
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    analog circuits
    CCII
    CCCII
    CFOA
    integrated circuit modelling
    VHDL-AMS
    circuit simulation
    układy analogowe
    symulacja obwodowa
    Opis:
    This paper focuses on analysis and behavioral modeling of second generation positive and negative current conveyors (CCII+s, CCII‒s), as well current-controlled current conveyors (CCCIIs). On the basis of the proposed CCII+ model improved behavioral models for three-terminal and four-termi-nal monolithic CFOAs are created. The models are developed by using VHDL analog and mixed-signal (VHDL-AMS) language and the descriptions are adapted to the SystemVision (version 5.5) simulation program, which is a part of the Mentor Graphics system. The proposed models simulate static and dynamic para-meters for differential and common-mode input signals at room temperature, including the parameters input offsets, accurate input impedances, non-dominant poles at differential input signals, AC common-mode rejection, PSRR effects, output impe-dances, slew rate limiting and terminal voltage/current operating ranges. The modeling parameters are extracted for commercially available four-terminal CFOA AD844A and CCCII OPA860 by analyzing semiconductor data books or through characterization measurements. For the validation process simulation and experi-mental results for sample electronic circuits are given.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2018, 9, 1; 34-46
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermal modelling of modern processors using FEM and compact model
    Autorzy:
    Galicia, M.
    Zając, P.
    Maj, C.
    Szermer, M.
    Napieralski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/397698.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    thermal simulation
    finite-element method
    multi-core
    thermal modelling
    symulacje termiczne
    metoda elementów skończonych
    wielordzeniowość
    modelowanie cieplne
    Opis:
    A variety of thermal models has been proposed to predict the temperatures inside modern processors. In this paper, we describe and compare two such approaches, a detailed FEMbased simulation and a simpler architectural compact model. It is shown that both models provide comparable results when it comes to predicting the maximal temperature, however there are also non-negligible differences when estimating thermal gradients within a chip. Furthermore, transient simulation results show some differences in temperature profile during processor heating.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2015, 6, 3; 110-116
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Qucs equation-defined and Verilog-A higher order behavioral device models for harmonic balance circuit simulation
    Autorzy:
    Brinson, M.
    Kuznetsov, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/397905.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    Qucs
    Xyce
    Harmonic Balance RF simulation
    compact semiconductor device modelling
    equation-defined devices
    macromodel
    modelowanie urządzeń elektronicznych
    makromodele
    Opis:
    This paper is concerned with the development and evaluation of a number of modeling techniques which improve Qucs Harmonic Balance simulation performance of RF compact device models. Although Qucs supports conventional SPICE semiconductor device models, whose static current/voltage and dynamic charge characteristics exhibit second and higher order derivatives may not be continuous, there is no guarantee that these will function without Harmonic Balance simulation convergence problems. The same comment also applies to a number of legacy compact semiconductor device models. The modeling of semiconductor devices centered on non-linear Equation-Defined Devices and blocks of Verilog-A code, combined with linear components, is introduced. These form a class of compact macromodel that has improved Harmonic Balance simulation performance. To illustrate the presented modeling techniques RF diode, BJT and MESFET macromodels are described and their Harmonic Balance performance simulated with Qucs and Xyce©.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2015, 6, 2; 49-58
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Frequency domain non-linear compact modelling and simulation of IC spiral inductors on silicon
    Autorzy:
    Brinson, Mike
    Powiązania:
    https://bibliotekanauki.pl/articles/397951.pdf
    Data publikacji:
    2018
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    Qucs
    Qucs-S
    Ngspice
    Xyce
    compact device modelling
    Frequency Equation-Defined Devices
    FEDD
    Equation-Defined Devices
    EDD
    SPICE B type sources
    Harmonic Balance simulation
    Opis:
    SPICE AC circuit simulation is fundamentally a small signal network analysis of a linear or non-linear circuit operating at specified DC bias conditions, where the electrical network component values are assumed not to be functions of AC input signal frequency. In the case of RF circuit simulation this assumption can give rise to significant modelling errors. With the recent improvements in General Public License (GPL) circuit simulators this situation is changing, particularly through the introduction of Frequency Dependent Equation-Defined Device (FEDD) models, non-linear current/voltage static and dynamic Equation-Defined Device (EDD) models and user controlled swept signal frequency simulation employing Harmonic Balance steady state analysis. The main purpose of this paper is to introduce a number of novel modelling and circuit simulation techniques that allow, and enhance, the construction of compact device models with embedded behavioural components whose non-linear properties are functions of AC input signal frequency. To demonstrate these new modelling techniques a compact model for a 10 GHz band width spiral inductor integrated on silicon is introduced, its compact model presented, and finally its simulation performance compared with published measured device data.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2018, 9, 1; 13-26
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Analysis and simulation modeling of programmable circuits using digital potentiometers
    Autorzy:
    Pandiev, I. M
    Powiązania:
    https://bibliotekanauki.pl/articles/398071.pdf
    Data publikacji:
    2014
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    mixed analogue digital integrated circuits
    digital potentiometer
    programmable circuits
    frequency domain analysis
    behavioral modelling
    circuit simulation
    analogowo-cyfrowe układy scalone
    potencjometr cyfrowy
    układy programowalne
    analiza dziedziny częstotliwości
    modelowanie behawioralne
    symulacja obwodu
    Opis:
    In this paper an object of analysis and simulation modeling are the basic programmable circuits using CMOS digital potentiometers or Resistive Digital-to-Analog Converters (RDACs). Based on the analysis and principle of operation an improved SPICE-based behavioral model for RDAC potentiometers is created. The model accurately reflects resolution (wiper steps), nominal end-to-end resistance, wiper resistance, linear and nonlinear increment/decrement of the wiper, common-mode leakage current, operating bandwidth, analog crosstalk, temperature coefficients and noise effects. Model parameters are extracted for the dual RDAC potentiometer AD5235 from Analog Devices as an example. The workability of the proposed simulation model is verified by simulation modeling and experimental testing of sample electronic circuits.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2014, 5, 4; 127-135
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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