Temat: SOI - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Silicon-on-Insulator technology for imaging and application to a switching photodetector
Autorzy:: Abdo, N.
Sallin, D.
Koukab, A.
Estribeau, M.
Magnan, P.
Kayal, M.
Powiązania:: https://bibliotekanauki.pl/articles/397865.pdf
Data publikacji:: 2015
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: photodetectors
silicon-on-insulator
fotodetektory
SOI
Opis:: This paper analyzes some advantages of Silicon-on-Insulator (SOI) based photodetectors for low light imaging. It shows that SOI based sensors not only solve the bulk carriers problem, it can also act as a very selective spectral filter by acting as a resonant cavity, which is useful in application with a very narrow spectrum of interest, such as bioluminescence imaging. The SOI implementation of a switching photodetector based with an hybrid MOS-PN structure is presented and its advantages in terms of dark current minimization and SNR improvement highlighted.
Źródło:: International Journal of Microelectronics and Computer Science; 2015, 6, 4; 136-141
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: High-voltage SoI Unity-gain Voltage Buffers with Function-enable and Power-down Functionality
Autorzy:: Jankowski, M
Napieralski, A
Powiązania:: https://bibliotekanauki.pl/articles/397893.pdf
Data publikacji:: 2013
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: wysokonapięciowy układ scalony
proces SoI
stan wysokiej impedancji
high-voltage integrated circuits
SoI process
high impedance state
enable functionality
Opis:: This paper discusses possibilities of enable and power-down functionality implementation in HV SoI unity-gain buffers. Modifications of selected HV buffer structures are analyzed. Approaches of power-down, high input and output impedance functionality implementation are introduced and discussed.
Źródło:: International Journal of Microelectronics and Computer Science; 2013, 4, 1; 26-31
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Measurement and performance evaluation of a silicon on insulator pixel matrix
Autorzy:: Ntavelis, D.
Harik, L.
Sallese, J.-M.
Kayal, M.
Hatzopoulos, A.
Powiązania:: https://bibliotekanauki.pl/articles/397821.pdf
Data publikacji:: 2010
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: technika SOI tranzystora polowego MOS
czujnik obrazu
pompować ładunek
pierwsza kolejność delta-sigma
SOI MOSFET
image sensors
charge pumping
first order delta-sigma
Opis:: A new technique for driving silicon-on-insulator pixel matrixes has been proposed in |1|, which was based on transient charge pumping for evacuating the extra photo-generated charges from the body of the transistor. An 8x8 pixel matrix was designed and fabricated using the above technique. In this paper, the measurement set-up is described and the performance evaluation procedure is given, together with results of its implementation on the fabricated pixel matrix. The results show the applicability of the charge pumping technique and the effective operation of the image sensor.
Źródło:: International Journal of Microelectronics and Computer Science; 2010, 1, 3; 299-304
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

Artykuł

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