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    Wyświetlanie 1-11 z 11
    Tytuł:
    Comparative investigation of SiC and Si power electronic devices operating at high switching frequency
    Autorzy:
    Zymmer, K.
    Mazurek, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/200057.pdf
    Data publikacji:
    2011
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    semiconductor devices
    silicon carbide
    high frequency converters
    Opis:
    The paper presents results of measurements of the reverse recovery current and dynamic forward voltage of the silicon carbide (SiC) Schottky diodes operating at a 500 A/ěs current slope. These data were compared with the corresponding parameters determined for ultrafast silicon (Si) diodes. Results of power losses measurement in SiC Schottky diodes operating at switching frequency range of (10–200) kHz are presented and compared with corresponding data of ultrafast Si diodes. Also, results of power losses measurements in transistors of dc voltage switch are shown. Investigations were conducted with a SiC and the ultrafast Si freewheeling diode at the transistor switching frequency of 100 kHz. The results of measuring power losses dissipated in the dc converter with a SiC Schottky diode and the ultrafast silicon diode are also presented.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2011, 59, 4; 555-559
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    DC characteristics of the SiC Schottky diodes
    Autorzy:
    Janke, W.
    Hapka, A.
    Oleksy, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/202279.pdf
    Data publikacji:
    2011
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    silicon carbide
    Schottky diodes
    static characteristics
    high-temperature
    Opis:
    The isothermal and non-isothermal characteristics of silicon carbide Schottky diodes in the wide range of currents and ambient temperatures are investigated in this paper. The measurements of the diodes characteristics have been performed with the use of a pulse method, with fast registration of measurement points after the diode current turning on, or with the use of a fully static method, in which the self-heating phenomenon is taken into account. Apart from the measurements, the series of numerical experiments, giving the isothermal and non-isothermal characteristics as a result, were executed. The complex, accurate numerical procedures as well as simplified analytical calculations were implemented. A good conformity of all calculation and measurement results have been obtained. In the presented investigations, for relatively high currents and ambient temperatures, the influence of self-heating on the SiC Schottky diodes static characteristics is significant. The large (even 4 V for the ambient temperature 300.C ) values of voltages corresponding to the nominal diode currents have been observed.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2011, 59, 2; 183-188
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices
    Autorzy:
    Trochimiuk, P.
    Zdanowski, M.
    Rabkowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/201436.pdf
    Data publikacji:
    2019
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    inverters
    silicon carbide
    power MOSFET
    battery
    energy storage
    Opis:
    This paper discusses selected problems regarding a high-frequency improved current-fed quasi-Z-source inverter (iCFqZSI) designed and built with SiC power devices. At first, new, modified topology of the impedance network is presented. As the structure is derived from the series connection of two networks, the voltage stress across the SiC diodes and the inductors is reduced by a factor of two. Therefore, the SiC MOSFETs may be switched with frequencies above 100 kHz and volume and weight of the passive components is decreased. Furthermore, additional leg with two SiC MOSFETs working as a bidirectional switch is added to limit the current stress during the short-through states. In order to verify the performance of the proposed solution a 6 kVA laboratory model was designed to connect a 400 V DC source (battery) and a 3£400 V grid. According to presented simulations and experimental results high-frequency iCFqZSI is bidirectional – it may act as an inverter, but also as a rectifier. Performed measurements show correct operation at switching frequency of 100 kHz, high quality of the input and output waveforms is observed. The additional leg increases efficiency by up to 0.6% – peak value is 97.8%.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2019, 67, 6; 1085-1094
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Corrosion and thermal shock resistance of metal (Cu, Al) matrix composites reinforced by SiC particles
    Autorzy:
    Strojny-Nędza, A.
    Egizabal, P.
    Pietrzak, K.
    Zieliński, R.
    Kaszyca, K.
    Piątkowska, A.
    Chmielewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/200646.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    metal-matrix composites
    silicon carbide
    wear resistance
    corrosion
    thermal shocks
    Opis:
    This paper presents the results of studies concerning the production and characterization of Al-SiC/W and Cu-SiC/W composite materials with a 30% volume fraction of reinforcing phase particles as well as the influence of corrosion and thermal shocks on the properties of selected metal matrix composites. Spark plasma sintering method (SPS) was applied for the purpose of producing these materials. In order to avoid the decomposition of SiC surface, SiC powder was coated with a thin tungsten layer using plasma vapour deposition (PVD) method. The obtained results were analysed by the effect of the corrosion and thermal shocks on materials density, hardness, bending strength, tribological and thermal properties. Qualitative X-ray analysis and observation of microstructure of sample surfaces after corrosion tests and thermal shocks were also conducted. The use of PVD technique allows us to obtain an evenly distributed layer of titanium with a constant thickness of 1.5 µm. It was found that adverse environmental conditions and increased temperature result in a change in the material behaviour in wear tests.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 5; 1227-1236
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Edge termination design for 1.7 kV silicon carbide p-i-n diodes
    Autorzy:
    Taube, A.
    Sochacki, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/199922.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    edge termination
    silicon carbide
    4H-SiC
    p-i-n diode
    breakdown voltage
    JTE
    Opis:
    In this work, in order to obtain breakdown voltage values of the 4H-SiC p-i-n diodes above 1.7 kV, three designs have been examined: single-zone junction termination extention (JTE), double-zone JTE and a structure with concentric rings outside each of the areas of the double-zone JTE (space-modulated JTE). The influence of geometry and the level of p-type doping in the JTE area as well as the charge as the interface between the p-type JTE area and the passivation layer on the diode breakdown voltage was studied. The effect of statistical dispersion of drift layer parameters (thickness, doping level) on diodes breakdown voltage with various JTE structures was investigated as well. The obtained results showed that the breakdown volatge values for a diode with single zone JTE are very sensitive both to the dose of JTE area and charge accumulated at the JTE/dielectric interface. The use of a double zone or space-modulated JTE structures allows for obtaining breakdown voltage above 1.7 kV for a much wider range of doping parameters and with better tolerance to positive charge at the JTE/dielectric interface, as well as better tolerance to statistical dispersion of active layer parameters compared to a single zone JTE structure.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 2; 367-375
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load
    Autorzy:
    Bąba, Sebastian
    Powiązania:
    https://bibliotekanauki.pl/articles/2173625.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    reliability engineering
    reliability modelling
    power MOSFET
    SiC
    silicon carbide
    inżynieria niezawodności
    modelowanie niezawodności
    węglik krzemu
    tranzystor mocy MOSFET
    Opis:
    The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component. In this paper, a reliability model for SiC power MOSFET in SOT – 227 B housing, subjected to power cycling, is presented. Discussion covers preparation of Accelerated Lifetime Test required to develop such reliability model, analysis of semiconductor degradation progress, samples post-failure analysis and identification of reliability model parameters. Such model may be further used for failure prognostics or useful lifetime estimation of High Performance Power Supplies.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 3; art. no. e137386
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load
    Autorzy:
    Bąba, Sebastian
    Powiązania:
    https://bibliotekanauki.pl/articles/2090738.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    reliability engineering
    reliability modelling
    power MOSFET
    SiC
    silicon carbide
    inżynieria niezawodności
    modelowanie niezawodności
    węglik krzemu
    tranzystor mocy MOSFET
    Opis:
    The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component. In this paper, a reliability model for SiC power MOSFET in SOT – 227 B housing, subjected to power cycling, is presented. Discussion covers preparation of Accelerated Lifetime Test required to develop such reliability model, analysis of semiconductor degradation progress, samples post-failure analysis and identification of reliability model parameters. Such model may be further used for failure prognostics or useful lifetime estimation of High Performance Power Supplies.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 3; e137386, 1--8
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures
    Autorzy:
    Taube, A.
    Guziewicz, M.
    Kosiel, K.
    Gołaszewska-Malec, K.
    Król, K.
    Kruszka, R.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/953063.pdf
    Data publikacji:
    2016
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    aluminum oxide
    MOS
    silicon carbide
    4H-SiC
    high-K dielectrics
    tlenek glinu
    węglik krzemu
    dielektryki high-k
    Opis:
    The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO2 buffer layer on the electrical properties of the MOS structures with Al2O3 layer has been examined. Critical electric field values at the level of 7.5–8 MV/cm were obtained. The use of 5 nm thick SiO2 buffer layer caused a decrease in the leakage current of the gate by more than two decade of magnitude. Evaluated density of trap states near the conduction band of silicon carbide in Al2O3/4H-SiC MOS is about of 1×1013 eV−1cm−2. In contrast, the density of the trap states in the Al2O3/SiO2/4H-SiC structure is lower about of one decade of magnitude i.e. 1×1012 eV−1cm−2. A remarkable change in the MOS structure is also a decrease of density of electron traps located deeply in the 4H-SiC conduction band below detection limit due to using of the SiO2 buffer layer.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 3; 537-551
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of numerical and experimental study of armour system based on alumina and silicon carbide ceramics
    Autorzy:
    Chabera, P.
    Boczkowska, A.
    Morka, A.
    Kędzierski, P.
    Niezgoda, T.
    Oziębło, A.
    Witek, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/202054.pdf
    Data publikacji:
    2015
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    ballistic performance
    numerical simulation
    armour
    alumina ceramic
    silicon carbide ceramic
    ceramic-elastomer composites
    wydajność balistyczna
    symulacja numeryczna
    zbroja
    kompozyt ceramika-elastomer
    Opis:
    The main goal of this numerical and experimental study of composite armour systems was to investigate their ballistic behaviour. Numerical simulations were employed to determine the initial dimensions of panel layers before the actual ballistic test. In order to achieve this aim, multivariate computations with different thicknesses of panel layers were conducted. Numerical calculations were performed with the finite element method in the LS-DYNA software, which is a commonly used tool for solving problems associated with shock wave propagation, blasts and impacts. An axisymmetric model was built in order to ensure sufficient discretization. Results of a simulation study allowed thicknesses of layers ensuring assumed level of protection to be determined. According to the simulation results two armour configurations with different ceramics have been fabricated. The composite armour systems consisted of the front layer made of Al2O3 or SiC ceramic and high strength steel as the backing material. The ballistic performance of the proposed protective structures were tested with the use of 7.62 mm Armour Piercing (AP) projectile. A comparison of impact resistance of two defence systems with different ceramic has been carried out. Application of silicon carbide ceramic improved ballistic performance, as evidenced by smaller deformations of the second layer. In addition, one of armour systems was complemented with an intermediate ceramic-elastomer layer. A ceramic-elastomer component was obtained using pressure infiltration of gradient porous ceramic by elastomer. Upon ballistic impact, the ceramic body dissipated kinetic energy of the projectile. The residual energy was absorbed by the intermediate composite layer. It was found, that application of composite plates as a support of a ceramic body provided a decrease of the bullet penetration depth.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2015, 63, 2; 363-367
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    An active power filter based on a hybrid converter topology – Part 1
    Autorzy:
    Gwóźdź, Michał
    Ciepliński, Łukasz
    Powiązania:
    https://bibliotekanauki.pl/articles/2090725.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    shunt active power filter
    pulse width modulation
    PWM
    sigma-delta modulator
    silicon carbide
    bocznikowy filtr mocy czynnej
    modulacja szerokości impulsu
    modulator sigma-delta
    węglik krzemu
    Opis:
    This paper presents a concept of a shunt active power filter, which is able to provide more precise mapping of its input current drawn from a power line in a reference signal, as compared to a typical filter solution. It can be achieved by means of an interconnection of two separate power electronics converters making, as a whole, a controlled current source, which mainly determines the quality of the shunt active filter operation. One of these power devices, the “auxiliary converter”, corrects the total output current, being a sum of output currents of both converters, toward the reference signal. The rated output power of the auxiliary converter is much lower than the output power of the main one, while its frequency response is extended. Thanks to both these properties and the operation of the auxiliary converter in a continuous mode, pulse modulation components in the filter input current are minimized. Benefits of the filter are paid for by a relatively small increase in the complexity and cost of the system. The proposed solution can be especially attractive for devices with higher output power, where, due to dynamic power loss in power switches, a pulse modulation carrier frequency must be lowered, leading to the limitation of the “frequency response” of the converter. The concept of such a system was called the “hybrid converter topology”. In the first part of the paper, the rules of operation of the active filter based on this topology are presented. Also, the results of comparative studies of filter simulation models based on both typical, i.e. single converter, and hybrid converter topologies, are discussed.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 1; e136218, 1--10
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    An active power filter based on a hybrid converter topology – Part 1
    Autorzy:
    Gwóźdź, Michał
    Ciepliński, Łukasz
    Powiązania:
    https://bibliotekanauki.pl/articles/2173586.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    shunt active power filter
    pulse width modulation
    PWM
    sigma-delta modulator
    silicon carbide
    bocznikowy filtr mocy czynnej
    modulacja szerokości impulsu
    modulator sigma-delta
    węglik krzemu
    Opis:
    This paper presents a concept of a shunt active power filter, which is able to provide more precise mapping of its input current drawn from a power line in a reference signal, as compared to a typical filter solution. It can be achieved by means of an interconnection of two separate power electronics converters making, as a whole, a controlled current source, which mainly determines the quality of the shunt active filter operation. One of these power devices, the “auxiliary converter”, corrects the total output current, being a sum of output currents of both converters, toward the reference signal. The rated output power of the auxiliary converter is much lower than the output power of the main one, while its frequency response is extended. Thanks to both these properties and the operation of the auxiliary converter in a continuous mode, pulse modulation components in the filter input current are minimized. Benefits of the filter are paid for by a relatively small increase in the complexity and cost of the system. The proposed solution can be especially attractive for devices with higher output power, where, due to dynamic power loss in power switches, a pulse modulation carrier frequency must be lowered, leading to the limitation of the “frequency response” of the converter. The concept of such a system was called the “hybrid converter topology”. In the first part of the paper, the rules of operation of the active filter based on this topology are presented. Also, the results of comparative studies of filter simulation models based on both typical, i.e. single converter, and hybrid converter topologies, are discussed.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 1; art. no. e136218
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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