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Wyszukujesz frazę "film growth" wg kryterium: Temat


Wyświetlanie 1-2 z 2
Tytuł:
Characteristics of Carbide Interfacial Layer Formed During Deposition of DLC Films on 316L Stainless Steel Substrate
Autorzy:
Dudek, M.
Powiązania:
https://bibliotekanauki.pl/articles/354300.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
RF PECVD
carbon films
diamond like carbon film
film growth
carbides formation
Opis:
The paper presents the analysis of formation of interfacial layer during deposition of diamond like carbon film (DLC) on the 316L stainless steel by capacitive plasma discharge in the CH4 atmosphere. The structure of the interfacial layer of DLC film was strongly affected by the temperature increase during the initial stages of the process. Initially, thin interfacial layer of 5 nm has been formed. As the temperature had reached 210°C, the second phase of the process was marked by the onset of carbon atoms diffusion into the steel and by the interface thickness increase. Finally, the growth of chromium carbide interface, the upward diffusion of chromium and nickel atoms to film, the etching and the decrease of the DLC film thickness were observed at 233°C. These investigations were carried out ex-situ by spectroscopic ellipsometry, X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectroscopy.
Źródło:
Archives of Metallurgy and Materials; 2017, 62, 4; 2211-2216
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition
Autorzy:
Kim, D.
Kim, D. H.
Riu, D.-H.
Choi, B. J.
Powiązania:
https://bibliotekanauki.pl/articles/353808.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
atomic layer deposition
tin oxide
growth rate
film density
optical band gap
Opis:
Among the various thin film coating techniques, atomic layer deposition (ALD) has features of good controllability of the thickness, excellent step-coverage in 3-dimensional object even in the sub-nm thickness range at the relatively low deposition temperature. In this study, SnO2 thin films were grown by ALD in the variation of substrate temperatures from 150 to 250°C. Even such a low temperature may influence on the growth kinetics of the ALD reaction and thus the physical characteristics of thin films, such as crystallinity, film density and optical band gap, etc. We observed the decrease of the growth rate with increasing substrate temperature, at the same time, the density of the film was decreased with increasing temperature. Steric hindrance effect of the precursor molecule was attributed to the inverse relationship of the growth temperature and growth rate as well as the film density. Optical indirect band gap energy (~3.6 eV) of the ALD-grown amorphous SnO2 films grown at 150°C was similar with that of the literature value, while slightly lower band gap energy (~3.4 eV) was acquired at the films grown at higher temperature.
Źródło:
Archives of Metallurgy and Materials; 2018, 63, 2; 1061-1064
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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