Temat: gallium - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Thermal Desorption of Argon Implanted into Gallium Arsenide
Autorzy:: Turek, Marcin
Droździel, Andrzej
Pyszniak, Krzysztof
Węgierek, Paweł
Powiązania:: https://bibliotekanauki.pl/articles/2201837.pdf
Data publikacji:: 2022
Wydawca:: Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:: thermal desorption spectroscopy
gallium arsenide
ion implantation
Opis:: Thermal desorption of Ar implanted with energies 150 keV and 100 keV with fluence 1×10^16 cm^-2 into GaAs is considered. A sudden release of Ar is observed in temperature range 1100 -1180 K as a single narrow peak in TDS (Thermal Desorption Spectroscopy) spectra. This is accompanied by a strong background signal from atmospheric Ar trapped in various parts of the spectrometer. Desorption peak shift analysis allows estimation of desorption activation energy values - these are 3.6 eV and 2.5 eV for implantation energies 150 keV and 100 keV, respectively. These results are comparable to that measured for Ar implanted into germanium target.
Źródło:: Advances in Science and Technology. Research Journal; 2022, 16, 4; 318--326
2299-8624
Pojawia się w:: Advances in Science and Technology. Research Journal
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Crystal Lattice Damage and Recovery of Rare-Earth implanted Wide Bandgap Oxides
Autorzy:: Sarwar, Mahwish
Ratajczak, Renata
Ivanov, Vitalii
Mishra, Sushma
Turek, Marcin
Wierzbicka, Aleksandra
Woźniak, Wojciech
Guziewicz, Elżbieta
Powiązania:: https://bibliotekanauki.pl/articles/2204945.pdf
Data publikacji:: 2022
Wydawca:: Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:: wide bandgap oxides
zinc oxide
gallium oxide
rare earth
ion implantation
Rutherford backscattering spectrometry
low temperature photoluminescence
Opis:: Rare earth (RE) elements are important for the optical tuning of wide bandgap oxides (WBO) such as β-Ga2O3 or ZnO, because β-Ga2O3:RE or ZnO:RE show narrow emission lines in the visible, ultra-violet and infra-red region. Ion implantation is an attractive method to introduce dopant into the crystal lattice with an extraordinary control of the dopant ion composition and location, but it creates the lattice damage, which may render the dopant optically inactive. In this research work, we investigate the post-implantation crystal lattice damage of two matrices of wide-bandgap oxides, β-Ga2O3 and ZnO, implanted with rare-earth (RE) to a fluence of 5 x 10^14, 1 x 10^15 and 3 x 10^15 atoms/cm^2, and post-growth annealed in Ar and O2 atmosphere, respectively. The effect of implantation and annealing on both crystal lattices was investigated by channeling Rutherford backscattering spectrometry (RBS/C) technique. The level of crystal lattice damage caused by implantation with the same RE fluences in the case of β-Ga2O3 seems to be higher than in the case of ZnO. Low temperature photoluminescence was used to investigate the optical activation of RE in both matrices after performed annealing.
Źródło:: Advances in Science and Technology. Research Journal; 2022, 16, 5; 147--154
2299-8624
Pojawia się w:: Advances in Science and Technology. Research Journal
Dostawca treści:: Biblioteka Nauki

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