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    Wyświetlanie 1-8 z 8
    Tytuł:
    Synthesis and Characterization of Manganese Sulphide Thin Films by Chemical Bath Deposition Method
    Autorzy:
    Geetha, G.
    Murugasen, P.
    Sagadevan, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030049.pdf
    Data publikacji:
    2017-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    MnS thin films
    XRD
    SEM
    dielectric studies
    Opis:
    Manganese sulphide (MnS) thin films were prepared by chemical bath deposition method. X-ray diffraction analysis was used to study the structure and the crystallite size of MnS thin films. The grain size and the surface morphology were studied using scanning electron microscopy. The optical properties were studied using the UV-visible absorption spectrum. The dielectric properties of MnS thin films were studied for different frequencies and different temperatures. Further, electronic properties, such as valence electron plasma energy, average energy gap or the Penn gap, the Fermi energy and electronic polarizability of the MnS thin films were calculated. The ac electrical conductivity study revealed that the conduction depended both on the frequency and the temperature. The temperature dependent conductivity study confirmed the semiconducting nature of the films.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 4; 1221-1226
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Inner Size Effect in Layered Films with Eutectic Interaction of Components
    Autorzy:
    Dukarov, S.
    Petrushenko, S.
    Sukhov, V.
    Churilov, I.
    Samsonik, A.
    Skryl, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030004.pdf
    Data publikacji:
    2018-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    inner size effect
    multilayer films
    interfacial energy
    Opis:
    The results of the study of melting of Bi-Sn and Pb-Sn polycrystalline layered film systems with the thickness of 200-400 nm on a substrate with temperature gradient are given. Multilayer (each layer is of 10-20 nm) and bilayer films (layers are of 100-200 nm) of the same total thickness have been investigated. Broadening of the melting range in all films and lowering of melting point in multilayer samples compared to the bilayer ones have been observed. The observed phenomena are discussed within existing thermodynamic concepts in consideration of interfacial energy of contacting layers of components and energy of grain boundaries in polycrystalline films.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 5; 1186-1190
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Nitridation and Pre-Growth Annealing of the Sapphire Substrate on the Quality of Zinc Oxide Thin Films Grown by RF-Magnetron Sputtering
    Autorzy:
    Baseer Haider, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1032562.pdf
    Data publikacji:
    2017-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    thin films
    wide bandgap semiconductors
    ZnO
    magnetron sputtering
    Opis:
    ZnO has attracted much attention due to its wide bandgap (3.2 eV) and high exciton binding energy of 60 meV. These properties make ZnO a highly desirable material for high frequency devices that can work in harsh environment. We have grown ZnO thin films at different temperatures ranging from 100°C to 500°C. We have observed that surface roughness is first decreased with the increase in the growth temperature but then by further increasing the growth temperature beyond 300°C, results in increased surface roughness of the grown samples, whereas grain size of the samples increases with the increase in the growth temperature. Crystalline quality of the films is also improved with the increase in the growth temperature but then degrades by further increase beyond 200°C. We achieved the highest Hall mobility for the ZnO sample grown at 200°C. The optimum growth condition of ZnO thin films on sapphire (0001) in our RF/DC magnetron-sputtering unit were achieved for the films grown at 200°C. Subsequently, we performed pre-growth treatment to the sapphire substrate then grew ZnO films at 200°C. Pre-growth treatment involved heating the substrate at 500°C for about half an hour and then etching the sapphire surface with nitrogen plasma. We have observed that pre-growth heating and nitridation of the sapphire substrate results in bigger grain size whereas no improvement was observed in the crystallinity of the film.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 4; 1325-1328
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Reactor Pressure on Electrical and Structural Properties of Diamond Films Grown by Hot-Filament CVD
    Autorzy:
    Ullah, M.
    Ahmed, E.
    Rana, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030224.pdf
    Data publikacji:
    2017-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    HFCVD
    electrical properties
    diamond films
    growth
    reactor pressure
    Opis:
    Polycrystalline diamond films with preferred (111) and (222) facets were fabricated inside hot filament chemical vapour deposition reactor on silicon wafers using a mixture of 1% methane in hydrogen at various reactor pressures ranging from 10 to 50 mbar. Regarding characterization of diamond films, internal texture, surface morphology, quality of diamond and electrical conductivity were investigated using X-ray diffraction, scanning electron microscopy, the Raman spectroscopy and four-point-probe van der Pauw techniques, respectively. Results of these studies demonstrate that polycrystalline diamond structure is grown in random orientation with (111) facet being dominant showing sharp grain boundaries. Moreover, growth rate was found to increase with pressure up to 20 mbar and then decreased for further rise in pressure. That is why grain density is high with relatively smaller grains at higher pressures caused by higher nucleation rates. In contrast, electrical resistivity decreased ≈3 orders of magnitude showing a minimum at 2.9×10⁶ Ω cm as pressure was increased in the reactor. Reactor pressure during film growth resulted in poor surface morphology, absence of sp³ bonds and low resistivity. Hence, decrease of resistivity makes diamond films desirable for many electrical applications in semiconducting/electronic devices.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 6; 1419-1425
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fractal Features and Structural, Morphological, Optical Characteristics of Sol-Gel Derived Silica Nanoparticled Thin Films
    Autorzy:
    Uysal, B.
    Pekcan, Ö.
    Powiązania:
    https://bibliotekanauki.pl/articles/1029990.pdf
    Data publikacji:
    2018-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    fractal dimension
    silica
    sol-gel method
    size-dependence
    thin films
    Opis:
    Nanostructured silica films using a simple and effective sol-gel spin coating technique were synthesized and the influence of ammonia/sol ratios on the particle size and thickness of this film was investigated. In addition, fractal dimensions of the prepared films were determined using the scattering response technique. The samples were characterized by atomic force microscopy and UV-vis spectroscopy. Comparing optical method and image analysis of atomic force microscopy micrographs, the fractal dimension of silica nanoparticled thin films was determined. The fractal dimensions of the films verified by atomic force microscopy analysis were found to be around 2.03 which is very close to the values (2.0358, 2.0325, and 2.0335) obtained using optical method. As a result of these findings, precise determination of the nanoparticled silica thin films fractal dimension using both optical and surface analysis methods was realized.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 5; 1160-1164
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effects of Elastic Coupling between BaTiO₃ Ferroelectric Film and a Substrate with Finite Thickness on Piezoelectric Coefficients
    Autorzy:
    Zhang, Wei
    Zhang, Hua
    Ouyang, Jun
    Hu, Fangren
    Powiązania:
    https://bibliotekanauki.pl/articles/1030227.pdf
    Data publikacji:
    2017-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    barium titanate
    ferroelectric heterostructures
    constrained films
    longitudinal piezoelectric coefficients
    elastic deformation
    Opis:
    The effective piezoelectric coefficients of BaTiO₃ ferroelectric films epitaxially grown on different single crystal substrates with finite thickness have been theoretically analyzed. The effective longitudinal converse piezoelectric coefficients d₃₃ of film and "film-substrate" heterostructure all monotonously increased with increase of the film thickness fraction k, and the latter is always larger than the former at the range of 0 < k < 1. Meanwhile, we also found that the effective piezoelectric coefficients d₃₃ were affected by the substrates due to different elastic constants. These results show that the elastic deformation and clamping effect of substrate have significant impacts on the piezoelectric behavior of bilayer heterostructure.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 6; 1426-1430
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural and Electrical Properties of SnO₂:F Thin Films Prepared by Chemical Vapor Deposition Method
    Autorzy:
    Najafi, N.
    Rozati, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030319.pdf
    Data publikacji:
    2017-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    chemical vapor deposition
    SnO₂:F thin films
    structural properties
    electrical properties
    Opis:
    Fluorine doped tin oxide (FTO) thin films were deposited onto glass substrate at different substrate temperatures by a simple and inexpensive method of air pressure chemical vapor deposition. The substrate temperature was kept constant at about 500°C as the optimum temperature, and air was used as both a carrier gas and the oxidizing agent. A very simple method of characterization were carried on to investigate the electrical and structural properties of the prepared thin films. The electrical parameters variations showed that these parameters vary with substrate temperature ranging from an insulator thin film to a highly conductive layer. X-ray diffraction also revealed the structure to be polycrystalline at higher temperatures compared to amorphous structure for lower temperatures.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 2; 222-225
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modification of Magnetic Properties of Pt/Co/Pt Films by $Ga^{+}$ Ion Irradiation: Focused versus Uniform Irradiation
    Autorzy:
    Sveklo, I.
    Mazalski, P.
    Jaworowicz, J.
    Jamet, J.
    Vernier, N.
    Mougin, A.
    Ferré, J.
    Kisielewski, M.
    Zablotskii, V.
    Bourhis, E.
    Gierak, J.
    Postava, K.
    Fassbender, J.
    Kanak, J.
    Maziewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398198.pdf
    Data publikacji:
    2018-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    ultrathin films
    ion irradiation
    magnetic hysteresis
    magnetic anisotropy
    magneto-optic Kerr effect
    Opis:
    30 keV $Ga^{+}$ irradiation-induced changes of magnetic and magneto-optical properties of sputtered Pt/Co/Pt ultrathin trilayers films have been studied as a function of the ion fluence. Out-of-plane magnetic anisotropy states with enhanced magneto-optical effects were evidenced for specific values of cobalt thickness and irradiation fluence. Results obtained after uniform or quasi-uniform focused ion beam irradiation on either out-of-plane or in-plane magnetized sputtered pristine trilayers are compared. Similar irradiation-induced magnetic changes are evidenced in quasi-uniformly focused ion beam or uniformly irradiated films, grown either by sputtering or molecular beam epitaxy. We discuss on plausible common mechanisms underlying the observed effects.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 5; 1215-1226
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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