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    Wyświetlanie 1-11 z 11
    Tytuł:
    Spontaneous Current Study in Wheat Starch Nano Powder
    Autorzy:
    Gaur, M.
    Gaur, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1537753.pdf
    Data publikacji:
    2010-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.22.Ej
    77.22.Cm
    77.22.Jp
    Opis:
    Spontaneous current study has been carried out in 70 nm particle size of wheat starch nano powder. The starch nano powder was prepared by mechanical grinding method. The spontaneous current was found to be induced and flowing in external circuit under short circuit condition by heating a sandwitched system. Sandwitched system consist of a starch nano powder (i.e. powder in different weight ratio of distilled water) between similar (Al-Al) and dissimilar (Al-Zn, Al-Cu, Al-Ag) electrode combination. The Spontaneous current spectra show two peaks lies in 46 ± 4°C and 72 ± 4°C, respectively, in the first heating run. However, only single peak was observed in second heating run. In the dissimilar electrode combination the first peak shifts to lower temperature side, while second peak shifts to higher temperature side. Spontaneous current mechanism could be explained on the basis transitional changes of starch nano powder caused by influence of water. The temperature dependent open circuit voltage $V_{oc}$ was recorded. A linear relationship was observed between dissimilar electrodes system due to difference in electrode work functions. It has been observed that spontaneous current is influenced by water and depends on the choice of electrode material.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 6; 945-948
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of SiC Surface Preparation on Homoepitaxial Growth; X-ray Reflectometric Studies
    Autorzy:
    Mazur, K.
    Wierzchowski, W.
    Wieteska, K.
    Hofman, W.
    Sakowska, H.
    Kościewicz, K.
    Strupiński, W.
    Graeff, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538812.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cm
    61.72.Ff
    61.72.up
    Opis:
    X-ray reflectometric and diffraction topographic methods were applied for examination of 4H and 6H silicon carbide substrates finished with various regimes, as well as, silicon carbide epitaxial layers. The investigations indicated a very good quality of the substrate surfaces finished with the process established at the Institute of Electronic Materials Technology, which provided the surface roughness σ = 0.55 ± 0.07 nm for 4H-SiC wafers. These values were better than those of substrate wafers offered by many commercial producers. The surface roughness was decreased during the initial high temperature etching to σ = 0.22 ± 0.07 nm. A relatively good structural quality was confirmed in the case of 4H epitaxial wafers deposited on the substrates prepared from the crystals manufactured at the IEMT, with the 8° off-cut from the main (001) plane.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 272-276
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Topographic and Reflectometric Investigation of Crystallographic Defects and Surface Roughness in 4H Silicon Carbide Homoepitaxial Layers Deposited at Various Growth Rates
    Autorzy:
    Wierzchowski, W.
    Wieteska, K.
    Mazur, K.
    Kościewicz, K.
    Balcer, T.
    Strupiński, W.
    Paulmann, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1431659.pdf
    Data publikacji:
    2012-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cm
    61.72.Ff
    61.72.up
    Opis:
    Undoped 4H silicon carbide epitaxial layers were deposited by means of CVD method with growth rates of 2 μm/h, 5 μm/h and 11 μm/h at 1540°C on n-doped 8°, 4° and 0° off-cut 4H-SiC (00·1) substrates. The structural defects were studied before and after growth of the epitaxial layers by means of conventional Lang topography, synchrotron white beam and monochromatic beam topography and by means of X-ray specular reflectometry. The topographic investigations confirmed the continuation of the dislocations in the epitaxial deposit on the 8° and 4° off-cut substrates without new extended defects. The important difference occurred in the surface roughness of the epitaxial layers, which increased for higher growth rates. The epitaxial layers grown on 0° off-cut substrates at analogous condition contained usually other SiC polytypes, but the influence of the growth rate on the distribution of the polytypes was observed.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 4; 915-919
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hard and Soft X-Ray Reflectivity Studies οf $(NiFe//Au//Co//Au)_{10}$ Magnetic Multilayers
    Autorzy:
    Szymański, B.
    Stobiecki, F.
    Weis, T.
    Engel, D.
    Urbaniak, M.
    Kuświk, P.
    Lengemann, D.
    Ehresmann, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1810593.pdf
    Data publikacji:
    2009-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cm
    75.60.-d
    75.70.-i
    Opis:
    We report on hard and soft X-ray reflectivity investigations of $(Ni_{80}Fe_{20} (2.2 nm)//Au(2.3 nm)//Co(0.8 nm)//Au(2.3 nm))_{10}$ multilayers. Specular reflectivity curves were measured with Cu $K_{α}$ radiation and circularly polarized synchrotron radiation tuned to Co $L_{3}$ and Ni $L_{3}$ absorption edges. Structural properties of the multilayers were determined from the hard X-ray reflectivity curve. Comparison of reflectivity curves taken at different photon energies shows: (i) small difference in peak positions in dependence of reflectivity versus scattering vector q, (ii) different shapes of satellite Bragg peaks, (iii) different ranges of q for appearance of the Kiessig fringes. Analysis of soft X-ray reflectivity curves taken as a function of magnetic field allows to determine magnetic properties of Co and NiFe layer specifically.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 1; 366-368
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Gold Nanolayer Properties Using X-Ray Reflectometry and Spectroscopic Ellipsometry Methods
    Autorzy:
    Stabrawa, I.
    Banaś, D.
    Dworecki, K.
    Kubala-Kukuś, A.
    Braziewicz, J.
    Majewska, U.
    Wudarczyk-Moćko, J.
    Pajek, M.
    Góźdź, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398825.pdf
    Data publikacji:
    2016-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cm
    62.23.St
    68.55.-a
    81.07.-b
    Opis:
    X-ray reflectometry and spectroscopic ellipsometry methods were applied for determination of physical properties of gold nonolayers. The nanolayers were prepared by sputtering of gold on different substrates: borosilicate glass, polished crystalline quartz and crystalline silicon. With X-ray reflectometry technique roughness of the substrates and density, thickness and roughness of gold layers were determined. The results showed decrease in density of the gold layers due to their nanometer thickness and that roughness of the underlayer affects roughness of the gold layer. In addition, thicknesses of the gold layers measured with spectroscopic ellipsometry turned out to be in agreement, within the experimental uncertainty, with results of the X-ray reflectometry method.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 2; 233-236
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Substrate on Crystallographic Quality of AlGaN/GaN HEMT Structures Grown by Plasma-Assisted MBE
    Autorzy:
    Wierzbicka, A.
    Żytkiewicz, Z.
    Sobańska, M.
    Kłosek, K.
    Łusakowska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1431598.pdf
    Data publikacji:
    2012-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    61.05.cm
    81.15.Hi
    68.55.-a
    Opis:
    Results of characterization of AlGaN/GaN high electron mobility transistor (HEMT) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) are reported. High resolution X-ray diffraction (HRXRD) and X-ray reflectivity (XRR) were applied to show that structural properties of the AlGaN/GaN layers strongly depend on the substrate used for growth. It has been found that an additional 10 μm thick HVPE GaN layer grown on a commercial GaN/sapphire substrate significantly improves structural quality of AlGaN layer. However, the best structural parameters have been obtained for the HEMT sample grown on free-standing HVPE bulk GaN substrate.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 4; 899-902
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Time-of-Flight Positron Emission Tomography with Resistive Plate Chamber Detectors: An Unlikely but Promising Approach
    Autorzy:
    Couceiro, M.
    Crespo, P.
    Blanco, A.
    Ferreira, N.
    Mendes, L.
    Ferreira Marques, R.
    Fonte, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402607.pdf
    Data publikacji:
    2015-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    87.57.uk
    29.40.Cs
    87.57.cf
    87.57.cm
    Opis:
    The cost-effectiveness of resistive plate chamber detectors and their very good timing characteristics, open the possibility to build affordable time-of-flight positron emission tomography systems with a large axial field-of-view. Simulations suggest that, under reasonable assumptions, the absolute 3D true sensitivity, spatial resolution, and noise equivalent count rate of such systems for human whole-body screening, may exceed that of present crystal-based PET technology. However, due to the lack of energy resolution, although having energy sensitivity, the scatter fraction is expected to be considerably higher than that presented by crystal-based PET scanners. In the present paper, the simulation work done so far to access the expected performance of a resistive plate chamber time-of-flight-PET system with 2400 mm length axial field-of-view, a time resolution of 300 ps full width at half maximum for photons pairs, and depth-of-interaction information, will be revised.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 5; 1453-1461
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Realization of a Phase Noise Measurement Bench Using Cross Correlation and Double Optical Delay Line
    Autorzy:
    Salzenstein, P.
    Cussey, J.
    Jouvenceau, X.
    Tavernier, H.
    Larger, L.
    Rubiola, E.
    Sauvage, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047892.pdf
    Data publikacji:
    2007-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    06.30.Ft
    43.50.Yw
    87.64.M-
    87.57.cm
    Opis:
    In this paper there are presented first results obtained with a phase noise measurement bench operating in X-band, realized in our laboratory, using double optical delay line and cross correlation. Phase noise floor using a microwave sapphire oscillator is better than -160 dB rad$\text{}^{2}$/Hz at 10 kHz from the 10 GHz carrier, using a 2 km optical delay line.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 5; 1107-1111
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Mini-Disk Resonator Integrated into a Compact Optoelectronic Oscillator
    Autorzy:
    Salzenstein, P.
    Tavernier, H.
    Volyanskiy, K.
    Kim, N.
    Larger, L.
    Rubiola, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1795637.pdf
    Data publikacji:
    2009-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    06.30.Ft
    43.50.Yw
    87.64.M-
    87.57.cm
    Opis:
    This work consists in the design, fabrication and characterization of mini-disk $MgF_{2}$ resonators for integration into optoelectronic oscillator and first experimental results of implementation in microwave free spectral range oscillator with taper coupling optoelectronic oscillator.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 4; 661-663
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Porous Zn Growth Mechanism during Zn Reactive Sputter Deposition
    Autorzy:
    Borysiewicz, M.
    Wojciechowski, T.
    Dynowska, E.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198573.pdf
    Data publikacji:
    2014-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    52.70.-m
    81.15.Cd
    77.55.hf
    81.10.Pq
    52.27.Cm
    Opis:
    Ar-O-Zn plasma discharges created during DC reactive magnetron sputtering of a Zn target and RF reactive magnetron sputtering of a ceramic ZnO target were investigated and compared by means of the Langmuir probe measurements in order to determine the mechanism of growth of porous Zn films during DC-mode Zn reactive sputtering. The power supplied to the magnetrons during the sputtering was kept at 125 W and the plasma was characterised as a function of oxygen content in the sputtering gas mixture, ranging from 0 to 60% for two gas pressures related to porous Zn film deposition, namely 3 mTorr and 5 mTorr. Based on the correlation of plasma properties measurements with scanning electron microscope imaging and X-ray diffraction of the films deposited under selected conditions it was found that the growth of porous, polycrystalline Zn films was governed by high electron density in the plasma combined with a high electron temperature and an increased energy of the ions impinging on the substrate.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 5; 1144-1148
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    At the Tip of an MeV Beam: Provoking Cells and Performing Tomographic Imaging
    Autorzy:
    Pallon, J.
    Arteaga-Marrero, N.
    Nilsson, Ch.
    Elfman, M.
    Kristiansson, P.
    Nilsson, C.
    Wegdén, M.
    Olsson, M.
    Åkerström, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808531.pdf
    Data publikacji:
    2009-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.79.-v
    29.40.Wk
    87.53.-j
    87.53.Ay
    25.40.Cm
    29.30.Ep
    29.30.Kv
    61.43.Gt
    Opis:
    Biological applications of ion beams have recently become a new important research field using single ion hit facilities to study individual living cells and their response to the hit of a counted number of ions. One motivation is the search for a better understanding of the fundamental processes taking place in cells and organs as a result of irradiation. Another comes from the increasing interest in using high energy protons and heavy ions as a modality for radiotherapy of deep seated tumours. In the view of treatment efficiency, study of cell culture behaviour under controlled radiation experiments, and in different chemical environments at single ion hit facilities, is a first step towards a better understanding of the processes. Tomographic techniques are applicable to situations where you need information of the inside of an object but do not want to section it into thin slices or cannot do it. Using focused MeV ion beams for tomography restricts the sample size to the order of 10-100 μm, depending of the initial energy. On the other hand, the ability to focus at a sub-micrometer level makes ion beams well suited for analyses of small sized objects as cells, spores, etc. The scanning transmission ion microscopy mode of tomography gives the mass density and corresponding morphological structure of holes and pores. It can then be used to correct the results from the other mode, particle induced X-ray emission tomography. Here is discussed a porosity analysis of bentonite clay that is planned to form an important buffer zone around canisters filled with spent nuclear reactor fuel waste deposited 500 m underground in Sweden.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 2; 501-506
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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