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    Wyświetlanie 1-8 z 8
    Tytuł:
    The Antibacterial Activities of Ag/$Nano-TiO_2$ Modified Silicone Elastomer
    Autorzy:
    Wang, L.
    Sun, T.
    Zhou, S.
    Shao, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1215694.pdf
    Data publikacji:
    2014-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Bf
    Opis:
    We studied the ability of Ag/$nano-TiO_2$ to inhibit Staphylococcus aureus growth on silicone elastomer material. Ag/$nano-TiO_2$ silicone elastomer was prepared with different concentrations of 0%, 2%, 4%, 6%, 8%, 10%. The antibacterial efficacy of Ag/$nano-TiO_2$ silicone elastomer was determined by the inhibition zone method and the impregnated culture method. The antibacterial timeliness of Ag/$nano-TiO_2$ silicone elastomer was tested by direct contact method. The samples were kept through thermal aging process in an accelerated aging chamber. The effect of concentrations of Ag/$nano-TiO_2$ was insignificant (P < 0.05). There was significant difference between the Ag/$nano-TiO_2$ silicone elastomer and the blank silicone elastomer (P < 0.5). There was also significant difference among specimen groups whose aging periods were 50°C, 100°C, 150°C, 200°C for 87 h (P < 0.5). The silicone elastomer with different concentrations of Ag/$nano-TiO_2$ effectively inhibits Staphylococcus aureus growth.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 2; 248-250
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication of $Si_{1-x}Ge_x$ Alloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing
    Autorzy:
    Gao, K.
    Prucnal, S.
    Mücklich, A.
    Skorupa, W.
    Zhou, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400450.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uf
    78.55.Ap
    68.37.Lp
    Opis:
    In our contribution we present the fabrication of $Si_{1-x}Ge_x$ alloy by ion-implantation and millisecond flash lamp annealing. The 100 keV Ge ions at the fluence of $10 \times 10^{16}, 5 \times 10^{16}$, and $3 \times 10^{16} cm^{-2}$ were implanted into monocrystalline (100)-oriented Si wafers covered by 50 nm thermal oxide. In the consequence, the 50 nm amorphous Ge rich Si layers were obtained. The recrystallization of the implanted layers and the $Si_{1-x}Ge_x$ alloying were accomplished by flash lamp annealing with the pulse duration of 20 ms. Flash lamp treatment at high energy densities leads to local melting of the Ge-rich silicon layer. Then the recrystallization takes place due to the millisecond range liquid phase epitaxy. Formation of the high quality monocrystalline $Si_{1-x}Ge_x$ layer was confirmed by the μ-Raman spectroscopy, the Rutherford backscattering channeling and cross-sectional transmission electron microscopy investigation. The μ-Raman spectra reveal three phonon modes located at around 293, 404, and $432 cm^{-1}$ corresponding to the Ge-Ge, Si-Ge and Si-Si in the $Si_{1-x}Ge_x$ alloy vibrational modes, respectively. Due to much higher carrier mobility in the $Si_{1-x}Ge_x$ layers than in silicon such system can be used for the fabrication of advanced microelectronic devices.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 858-861
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing
    Autorzy:
    Prucnal, S.
    Turek, M.
    Gao, K.
    Zhou, S.
    Pyszniak, K.
    Droździel, A.
    Żuk, J.
    Skorupa, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400484.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.67.Hc
    81.05.Ea
    81.07.Ta
    81.15.Lm
    Opis:
    Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in $SiO_2$ and $Si_3N_4$ made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 935-938
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Charge Carrier Dynamics in $Ga_{1-x}Mn_{x}As$ Studied by Resistance Noise Spectroscopy
    Autorzy:
    Lonsky, M.
    Teschabai-Oglu, J.
    Pierz, K.
    Sievers, S.
    Schumacher, H.
    Yuan, Y.
    Böttger, R.
    Zhou, S.
    Müller, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1397018.pdf
    Data publikacji:
    2018-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    73.50.Td
    73.50.-h
    73.61.-r
    64.60.ah
    61.72.-y
    Opis:
    We report on electronic transport measurements of the magnetic semiconductor Ga_{1-x}Mn_{x}As, whereby the defect landscape in various metallic thin films (x=6%) was tuned by He-ion irradiation. Changes in the distribution of activation energies, which strongly determine the low-frequency 1/f-type resistance noise characteristics, were observed after irradiation and can be explained by deep-level traps residing in the As sublattice. Various other kinds of crystalline defects such as, for instance, Mn interstitials, which possibly form nanoscale magnetic clusters with a fluctuating spin orientation, also contribute to the 1/f noise and can give rise to random telegraph signals, which were observed in films with x=7%. In addition, we neither find evidence for a magnetic polaron percolation nor any features in the noise near the Curie temperature.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 3; 520-522
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer
    Autorzy:
    Prucnal, S.
    Jiao, F.
    Reichel, D.
    Zhao, K.
    Cornelius, S.
    Turek, M.
    Pyszniak, K.
    Drozdziel, A.
    Skorupa, W.
    Helm, M.
    Zhou, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1199248.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.jn
    61.72.Cc
    78.55.Hx
    Opis:
    Copper indium gallium diselenide (CIGS) becomes more significant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the final efficiency of the solar cell. An influence of the post-deposition millisecond range flash lamp annealing on the optical and microstructural properties of the CIGS films was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that flash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after flash lamp annealing the degradation of the photoluminescence is significantly suppressed and the absolute absorption in the wavelength range of 200-1200 nm increases by 25%.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1404-1407
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Design and the First Test Results of a Fast LTD Stage
    Autorzy:
    Chen, L.
    Zhou, L.
    Zou, W.
    Ren, J.
    Li, Y.
    Wu, S.
    Xie, W.
    Feng, S.
    Deng, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807988.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.70.+p
    52.75.Kq
    84.60.Ve
    Opis:
    Linear transformer driver stages are designed to be used as a primary energy storage in high power pulsed generators. In this report, the design and test results of the linear transformer driver stage prototype that delivers ≈100 kA fast pulse with 133 ns FWHM into a ≈0.87 Ω resistive load are described. This stage consists of 20 (100 kV, 20 nF) storage capacitors that are arranged in 10 identical bricks located evenly around the axis of the stage. Each brick contains two capacitors, a multi-gap switch, and the output connector that transfers the energy to the resistive load. The outer diameter of the stage is ≈1.5 m, at a length of ≈20 cm. The stage is developed to demonstrate the possibility of the fast linear transformer driver technology to create high power pulsed generators.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 1186-1188
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Embedded Solitons and Conservation Law with $χ^{(2)}$ and $χ^{(3)}$ Nonlinear Susceptibilities
    Autorzy:
    Savescu, M.
    Kara, A.
    Kumar, S.
    Krishnan, E.
    Zaka Ullah, M.
    Moshokoa, S.
    Zhou, Qin
    Biswas, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398312.pdf
    Data publikacji:
    2017-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    solitons
    χ^{(2)}
    conservation laws
    Opis:
    This paper studies embedded solitons that are confined to continuous spectrum, with $χ^{(2)}$ and $χ^{(3)}$ nonlinear susceptibilities. Bright and singular soliton solutions are obtained by the method of undetermined coefficients. Subsequently, the Lie symmetry analysis and mapping method retrieves additional solutions to the model such as shock waves, singular solitons, cnoidal waves, and several others. Finally, a conservation law for this model is secured through the Lie symmetry analysis.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 2; 297-303
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Experimental Studies on Charging Operation of a Compact Repetitive Tesla Transformer
    Autorzy:
    Zhang, Z.
    Zhang, J.
    Yang, H.
    Qian, B.
    Meng, Z.
    Li, D.
    Wang, S.
    Cao, Y.
    Zhou, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807860.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.30.Ng
    84.30.Jc
    84.30.Qi
    84.70.+p
    Opis:
    Charging operations of a compact Tesla transformer were experimentally investigated, in single-shot and rep-rate (50 pps for 1 s) modes, respectively. The charging limitations were also explored. The experimental results were compared and analyzed. The maximum secondary charging voltages of the Tesla transformer were measured to be 380 kV and 300 kV in single-shot and rep-rate modes, respectively. The RMS pulse-to-pulse instability of the secondary charging voltage is generally less than 10% but increases with the increasing initial voltage across the primary capacitor. Since the secondary capacitor of the Tesla transformer is a pulse forming line (PFL), continued operation is possible if there is breakdown in the PFL. Furthermore, operation can even be continued under occasional breakdown for some pulses, without the effects on the operations of subsequent pulses.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 973-975
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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