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    Wyświetlanie 1-11 z 11
    Tytuł:
    Analytic Equation of State and Thermodynamic Properties, for α-, β-, and γ-Si₃N₄ Based on Analytic Mean Field Approach
    Autorzy:
    Wang, L.
    Sun, J.
    Yang, W.
    Tian, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812044.pdf
    Data publikacji:
    2008-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    64.10.+h
    65.40.-b
    61.66.Fn
    Opis:
    The analytic mean field potential approach is applied to α-, β-, and γ-Si₃N₄. The analytic expressions for the Helmholtz free energy, internal energy, and equation of state were derived. The formalism for the case of the Morse potential is used in this work. Its six potential parameters are determined through fitting the compression experimental data of α-, β-, and γ-Si₃N₄. The calculated compression curves of α-, β-, and γ-Si₃N₄ are in good agreement with the available experimental data. This suggests that the analytic mean field potential approach is a very useful approach to study the thermodynamic properties of Si₃N₄. Furthermore, we predict the variation of the free energy and internal energy with the molar volume at several higher temperatures and calculate the temperature dependence of the molar volume, bulk modulus, thermal expansion coefficient and isochoric heat capacity at zero pressure.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 4; 807-818
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells
    Autorzy:
    Juršėnas, S.
    Kuokštis, E.
    Miasojedovas, S.
    Kurilčik, G.
    Žukauskas, A.
    Chen, C. Q.
    Yang, J. W.
    Adivarahan, V.
    Asif Khan, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038100.pdf
    Data publikacji:
    2004-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.21.Fg
    72.20.Jv
    78.47.+p
    Opis:
    Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient of luminescence featured a significant enhancement in nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial lateral overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells was shown to be determined by the substrate quality.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 6; 567-573
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes
    Autorzy:
    Juršėnas, S.
    Miasojedovas, S.
    Kurilčik, G.
    Liuolia, V.
    Žukauskas, A.
    Chen, C. Q.
    Yang, J. W.
    Kuokštis, E.
    Adivarahan, V.
    Asif Khan, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041736.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.21.Fg
    72.20.Jv
    78.47.+p
    Opis:
    GaN epilayers and AlGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on different crystal planes (c, a, and r) of the sapphire substrate were studied by excitation intensity dependent and time-resolved photoluminescence. In polar multiple quantum wells grown on a- and c-planes, a blueshift of the luminescence band with increasing the excitation energy was observed, indicating that screening of built-in field by free carriers takes place, whereas in nonpolar r-plane grown multiple quantum wells, the luminescence band maintained an almost constant peak position. Full screening of built-in field was achieved at the excitation densities higher than 0.3 mJ/cm$\text{}^{2}$. Under conditions of screened built-in electric field the structures were characterized by carrier lifetime. It was shown that nonpolar multiple quantum wells suffer from high density of nonradiative traps that can be due to substrate related threading dislocations.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 235-239
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigations of the Optical Band Positions and Spin-Hamiltonian Parameters for the Rhombic $VO^{2+}$ Complex in CsCl Crystal
    Autorzy:
    Fang, W.
    Zheng, W.
    Yang, D.
    Tang, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1365269.pdf
    Data publikacji:
    2014-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.70.Ch
    75.10.Dg
    61.72.Bb
    76.30.Fc
    Opis:
    The optical band positions and spin-Hamiltonian parameters (g factors $g_{i}$ and hyperfine structure constants $A_{i}$, where i=x, y, z) of the rhombic $VO^{2+}$ complex in CsCl crystal are calculated together from two theoretical methods. One is the complete diagonalization (of energy matrix) method and another is the perturbation theory method. The calculated results from the two methods coincide and are in reasonable agreement with the experimental values. So, both methods are effective in the explanations of optical and electron paramagnetic resonance (EPR) data for $d^1$ ions in crystals. The calculations also suggest that in $d^1$ rhombic octahedra the ground state is almost a pure | $d_{xy}$ ⟩ state. This point is different from that of conjugate $d^9$ (e.g., $Cu^{2+}$) ions in rhombic octahedra where the ground state should be an admixture of ground and first excited states.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 5; 1206-1209
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Explanation of the Optical Spectra and Spin-Hamiltonian Parameters for Nickel(II) in Cadmium Bromide Crystal
    Autorzy:
    Gong, J.
    Wang, L.
    Feng, W.
    Yang, X.
    Zhang, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1493631.pdf
    Data publikacji:
    2011-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.70.Ch
    75.10.Dg
    61.72.Bb
    76.30.Fc
    Opis:
    Based on crystal- and ligand-field theory, double-spin-orbital coupling approach was used to analyze the crystal-field energy levels and spin-Hamiltonian parameters of $Ni^{2+}$ ion at trigonal site in $CdBr_2$. The local lattice distortion (Δ R and $τ_{Ni^{2+}}$) is estimated from the crystal field parameters; the crystal field energy Hamiltonian was diagonalized in the full basis consisting of 45 wave functions of the $Ni^{2+}$ ion. Results of calculations are in good agreement with experimental data. The reasonableness of the theoretical results is discussed.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 3; 497-500
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Scintillation Properties of $Bi_{4}(Ge_{x}S_{1-x})_{3}O_{12}$ Single Crystal
    Autorzy:
    Xiao, X.
    Xu, J.
    Lu, B.
    Cai, W.
    Zhang, Y.
    Shen, H.
    Yang, B.
    Xiang, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399369.pdf
    Data publikacji:
    2015-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.10.Fq
    61.05.C-
    78.20.Ci
    78.70.Ps
    Opis:
    The solid solution crystals, $Bi_{4}(Ge_{x}Si_{1-x})_{3}O_{12}$ (BGSO) with x=0, 0.05, and 0.15, have been grown by the modified vertical Bridgman method. The as-grown crystals show 80% of transmittance with an absorption edge of 285 nm. The relative light yields of BGSO crystals are found to be 7.2%, 6.3%, and 4.2% of CsI(Tl) crystal for x=0, 0.05, and 0.15, respectively. The energy resolutions of these crystals are 18.9%, 21.3%, and 24.7%, respectively, with PMT for 662 keV gamma rays at room temperature when exposed to $\text{}^{137}Cs$ γ -ray. The scintillation performance of BGSO crystals clearly deteriorates with the increase of Ge content. However, the appropriate number of germanium ions doped to BSO crystal can improve its crystallization behavior and effectively restrain component segregation. It is expected that large size crystals of BGSO will be grown and applied to the dual readout calorimeter in the nearest future.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 3; 854-858
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Theoretical Analysis of the TE Mode Cerenkov Type Second Harmonic Generation in Ion-Implanted X-Cut Lithium Niobate Planar Waveguides
    Autorzy:
    Du, G.
    Li, G.
    Zhao, S.
    Qiao, W.
    Yang, K.
    An, J.
    Li, M.
    Wang, J.
    Wang, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808109.pdf
    Data publikacji:
    2009-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Dd
    42.82.Et
    Opis:
    We present a study of the Cerenkov configuration second harmonic generation in X-cut ion-implanted lithium niobate waveguides. An approximate solution of conversion efficiency is given and plotted which shows that it is very sensitive to the waveguide depth and pump wavelength. The results can be used in the design of waveguides for the efficient second harmonic generation in the Cerenkov configuration.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 3; 685-689
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure
    Autorzy:
    Misiuk, A.
    Wierzchowski, W.
    Wieteska, K.
    Londos, C.
    Andrianakis, A.
    Bak-Misiuk, J.
    Yang, D.
    Surma, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1539028.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    61.72.-y
    61.72.Ff
    61.72.uf
    62.50.-p
    Opis:
    Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × $10^{14} cm^{-3}$ (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 344-347
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment
    Autorzy:
    Wieteska, K.
    Misiuk, A.
    Prujszczyk, M.
    Wierzchowski, W.
    Surma, B.
    Bąk-Misiuk, J.
    Romanowski, P.
    Shalimov, A.
    Capan, I.
    Yang, D.
    Graeff, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812256.pdf
    Data publikacji:
    2008-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.c-
    61.72.-y
    61.82.-d
    Opis:
    Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content $(c_O)$ up to $1.1×10^{18} cm^{-3}$, admixed with N or Ge (Si-N, c_N ≤ $1.2×10^{15} cm^{-3}$, or Si-Ge, $c_{Ge} ≈ 7×10^{17} cm^{-3}$, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 2; 439-446
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Experimental Studies on Charging Operation of a Compact Repetitive Tesla Transformer
    Autorzy:
    Zhang, Z.
    Zhang, J.
    Yang, H.
    Qian, B.
    Meng, Z.
    Li, D.
    Wang, S.
    Cao, Y.
    Zhou, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807860.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.30.Ng
    84.30.Jc
    84.30.Qi
    84.70.+p
    Opis:
    Charging operations of a compact Tesla transformer were experimentally investigated, in single-shot and rep-rate (50 pps for 1 s) modes, respectively. The charging limitations were also explored. The experimental results were compared and analyzed. The maximum secondary charging voltages of the Tesla transformer were measured to be 380 kV and 300 kV in single-shot and rep-rate modes, respectively. The RMS pulse-to-pulse instability of the secondary charging voltage is generally less than 10% but increases with the increasing initial voltage across the primary capacitor. Since the secondary capacitor of the Tesla transformer is a pulse forming line (PFL), continued operation is possible if there is breakdown in the PFL. Furthermore, operation can even be continued under occasional breakdown for some pulses, without the effects on the operations of subsequent pulses.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 973-975
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoexcitation Spectroscopy and Material Alteration with Free-Electron Laser
    Autorzy:
    Sturmann, J.
    Albridge, R. G.
    Barnes, A. V.
    Gilligan, J.
    Graham, M. T.
    Mckinley, J. T.
    Ueda, A.
    Wang, W.
    Yang, X.
    Tolk, N. H.
    Davidson, J. L.
    Margaritondo, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1963341.pdf
    Data publikacji:
    1997-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.20.La
    79.20.Ds
    63.20.-e
    79.60.Jv
    73.20.At
    Opis:
    As synchrotron radiation sources have been used for many experiments in the ultraviolet and X-ray regimes, the free-electron laser is an excellent source for a wide array of infrared-photon projects and applications. The free-electron laser delivers a beam of powerful tunable pulsed radiation which provides the opportunity for spatial and temporal localization of the energy delivered at any desired wavelength within the 2-10 μ regime. One application discussed employs the free-electron laser for spectroscopy as a probe of electronic and vibrational structures. Another application uses the free-electron laser beam as a tool for altering materials in a fundamentally new way.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 4; 689-696
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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