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Wyświetlanie 1-15 z 34
Tytuł:
A Temperature Error Correction Method for a Thermometer Screen
Autorzy:
Yang, J.
Liu, Q.
Powiązania:
https://bibliotekanauki.pl/articles/1032598.pdf
Data publikacji:
2017-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
temperature error
surface air temperature
computational fluid dynamics
screen
Opis:
Due to solar radiation exposure, air flowing inside a thermometer screen may produce a measurement error of 0.8°C or higher. To improve the air temperature observation accuracy, a temperature error correction method is proposed. The correction method is based on a computational fluid dynamics method and a genetic algorithm method. The computational fluid dynamics method is implemented to analyze and calculate the temperature errors of a screen under various environmental conditions. Then, a temperature error correction equation is obtained by fitting the computational fluid dynamics results using the genetic algorithm method. To verify the performance of the correction equation the screen and an aspirated temperature measurement platform are characterized in the same environment to conduct the intercomparison. The aspirated temperature measurement platform serves as an air temperature reference. The mean temperature error given by measurements is 0.77°C, and the mean temperature error given by correction equation is 0.79°C. This correction equation allows the temperature error to be reduced by approximately 97.5%.
Źródło:
Acta Physica Polonica A; 2017, 132, 4; 1301-1305
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
$SiO_x$ Nanowires Produced on Molybdenum-Coated Si Substrates
Autorzy:
Kim, H.
Lee, J.
Yang, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813396.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
78.55.-m
Opis:
We synthesized $SiO_x$ nanowires with diameters of 30-140 nm, for the first time by the simple heating of the Mo-coated Si substrates. X-ray diffraction, selected area electron diffraction, and energy-dispersive X-ray spectroscopy indicated that the nanowires were in an amorphous state, comprising Si and O only. Fitting the photoluminescence spectrum with Gaussian functions revealed that the nanowires exhibited significant photoluminescence intensities near blue and green light regions. We extensively discussed the possible growth mechanism of $SiO_x$ nanowires.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1017-1020
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Catalyst-Free Growth of Magnesium Oxide Whiskers and Their Characteristics
Autorzy:
Kim, H.
Kong, M.
Yang, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813397.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
78.55.-m
Opis:
This study reports the production of magnesium oxide (MgO) whiskers on silicon (Si) substrates by the thermal heating of $MgB_2$ powders. We investigated the structural properties of the as-synthesized whiskers by using X-ray diffraction, transmission electron microscopy, selected area electron diffraction, and scanning electron microscopy. The product consisted of one-dimensional whiskers with a square cross-section. The whiskers had a single-crystalline cubic structure of MgO. The photoluminescence measurement with the Gaussian fitting exhibited visible light emission bands centered at 2.39 eV and 2.91 eV. We proposed the growth of MgO whiskers to follow the vapor-solid mechanism.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1021-1024
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis, Structure, Photoluminescence, and Raman Spectrum of Indium Oxide Nanowires
Autorzy:
Kim, H.
Na, H.
Yang, J.
Lee,, C.
Powiązania:
https://bibliotekanauki.pl/articles/1505485.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
78.55.-m
Opis:
Production of indium oxide $(In_2O_3)$ whiskers at a very low temperature of 650°C was reported. The synthetic route was comprised of a thermal heating process of a mixture of In and Mg powders. We have investigated the structural properties of the as-synthesized nanowires by using X-ray diffraction and scanning electron microscopy. The product consisted of one-dimensional nanowires, with a crystalline cubic structure of $In_2O_3$. The photoluminescence measurement with the Gaussian fitting exhibited visible light emission bands centered at 2.1 eV and 2.8 eV. The peaks of the Raman spectrum were indexed to the modes being associated with cubic $In_2O_3$.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 143-145
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Positron Annilation Lifetime and Glass Transition Temperatures in $CO_2$ Sorption Polystyrene
Autorzy:
Jean, Y.
Chen, H.
Lee, L.
Yang, J.
Powiązania:
https://bibliotekanauki.pl/articles/1812530.pdf
Data publikacji:
2008-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
78.66.Qn
71.60.+z
Opis:
Positron annihilation lifetime spectroscopy was used to measure the free-volume size and distributions as a function of temperature in polystyrene with and without 400 psi $CO_2$ sorption. The transition temperatures in the polystyrene with $CO_2$ sorption obtained from ortho-positronium lifetimes were found to depend on the thermal cycles and a meta-stable state showing a negative thermal expansion coefficient was observed between 53°C and 82°C during the first heating up experiment. The observed $T_g$ in polystyrene with, and without $CO_2$ sorption after annealing from ortho-positronium lifetimes were found to be 86°C and 91°C, which are 5°C higher, and 10°C lower than from the differential scanning calorimetry data, respectively. The observed free-volume variations are discussed in terms of hole expansion, creation, free-volume relaxation, plasticization, and hole filling in amorphous polymers.
Źródło:
Acta Physica Polonica A; 2008, 113, 5; 1385-1395
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy Levels and Oscillator Strength of Ni XXIII
Autorzy:
Hu, F.
Jiang, G.
Yang, J.
Zhang, J.
Zhao, X.
Powiązania:
https://bibliotekanauki.pl/articles/1493444.pdf
Data publikacji:
2011-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
31.15.V-
31.30.jc
Opis:
Energy levels and oscillator strengths have been calculated for the fine-structure transitions among the levels of the $(1s^2) 2s^2 2 p^2,$ $2s2 p^3,$ $2p^4,$ $2s^2 2p3s,$ $2s^2 2p3p,$ and $2s^2 2p3d$ configurations of Ni XXIII using the graspVU and FAC program. The extensive configuration interaction and relativistic effects have been included while generating the wave functions. The results are compared with other recent theoretical estimates, and their accuracy is assessed.
Źródło:
Acta Physica Polonica A; 2011, 120, 3; 429-437
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The ground state structures and magnetic properties of ZrₙNi (n=1-9) clusters from first principles calculation
Autorzy:
Zhang, Y.
Zhu, Z.
Zhou, X.
Yang, J.
Zhu, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1054889.pdf
Data publikacji:
2017-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
first-principles calculations
ZrₙNi clusters
the geometric structure of balance
stability and magnetic properties
Opis:
The ground state structures and magnetic properties of ZrₙNi (n = 1-9) clusters are studied by using first principles calculation. Firstly, we find the ground state configurations of ZrₙNi (n = 1-9) clusters. Secondly, the magic clusters (Zr₂Ni and Zr₇Ni) of ZrₙNi clusters are found by the comparisons of average binding energies, the second-order energy difference and energy gaps between the highest occupied orbital and the lowest unoccupied orbital of the ground state of ZrₙNi clusters. Thirdly, the calculated results show that magnetic moment of ZrₙNi (n = 1-2) clusters is 4 μ_{B}; however, the magnetic moment of ZrₙNi clusters is about 2 μ_{B} for n = 3-9 (exception for n = 7). Finally, it is found that the magnetic moment of ZrₙNi cluster mainly comes from Zr atom and Ni atom is the electron acceptor from the Mulliken population analysis.
Źródło:
Acta Physica Polonica A; 2017, 131, 6; 1507-1511
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermodynamic and Electronic Properties of $OsB_2$ from First-Principles Calculations
Autorzy:
Cheng, Y.
Yang, J.
Wang, Y.
Ji, G.
Chen, X.
Powiązania:
https://bibliotekanauki.pl/articles/1365243.pdf
Data publikacji:
2014-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.15.Mb
61.50.Ks
67.25.de
71.20.-b
Opis:
The pressure induced phase transitions of $OsB_2$ from the orthorhombic structure (Orth) to the hexagonal structure (Hex) is investigated by using ab initio plane-wave pseudopotential density functional theory, together with quasi-harmonic Debye model. We find that the pressure-induced phase transition occurs at 2.8 GPa and 12.5 GPa by local density approximation and general gradient approximation, respectively. It is predicted that $OsB_2$ has no phase transition temperature from the Orth structure to the Hex structure. Moreover, the dependences of the relative volume V/$V_0$ on the pressure, thermal expansion coefficient α on the pressure and temperature are also successfully obtained. The electronic properties including energy band, total and partial density of states and electron density difference for two structures are also analyzed. The Mulliken charges and Bond populations for both Orth and Hex structures are also obtained.
Źródło:
Acta Physica Polonica A; 2014, 125, 5; 1186-1190
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells
Autorzy:
Mickevičius, J.
Tamulaitis, G.
Kuokštis, E.
Shur, M.
Yang, J.
Gaska, R.
Powiązania:
https://bibliotekanauki.pl/articles/1811960.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.De
Opis:
Dynamics of nonequilibrium carriers in high-Al-content AlGaN/AlGaN multiple quantum wells was studied. A set of multiple quantum wells with well widths varying from 1.65 to 5.0 nm was grown by metal-organic chemical vapor deposition. The structures were investigated by photoluminescence spectroscopy under quasi-steady-state conditions. The observed blueshift of the photoluminescence band peak was attributed to the screening of the built-in electric field. The integrated photoluminescence intensity dependence on excitation and temperature showed a strong influence of carrier localization.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1247-1252
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Studies of Aluminum Nitride Nanowires
Autorzy:
Yang, J.
Na, H.
Kim, H.
Kebede, M.
Choi, R.
Jeong, J.
Lee, C.
Powiązania:
https://bibliotekanauki.pl/articles/1505466.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
78.55.-m
Opis:
We report the production of AlN nanowires by the thermal heating method, for exploring their photoluminescence properties. The room-temperature photoluminescence properties were investigated with different annealing environment. While broad emissions with peaks at around 2.45 and 2.95 eV were obtained from both unannealed and annealed samples, the additional 2.1 eV peak was found from the annealed samples. We have suggested the possible emission mechanisms based on the assumption that both 2.45 eV peak and 2.1 eV peak are ascribed to the nitrogen vacancies. Annealing in N_2 environment exhibited lower intensities of 2.45 eV peak and 2.1 eV peak in comparison to those in Ar environment, presumably due to the suppression of nitrogen vacancies.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 125-127
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence Decay Kinetics in GaN Studied by Frequency Domain Measurements
Autorzy:
Mickevičius, J.
Vitta, P.
Tamulaitis, G.
Žukauskas, A.
Shur, M.
Zhang, J.
Yang, J.
Gaska, R.
Powiązania:
https://bibliotekanauki.pl/articles/1813195.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
78.55.Cr
Opis:
Carrier dynamics in high-quality GaN epilayer was investigated at two extreme excitation levels. Carrier lifetime under high excitation conditions was estimated by using light-induced transient grating technique. Measurements at extremely low excitation power density were performed by using frequency-domain fluorescence lifetime technique. The study was performed in a wide temperature range from 8 to 300 K. The results revealed the influence of donor-acceptor pair recombination and carrier trapping processes.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 833-837
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells
Autorzy:
Juršėnas, S.
Kuokštis, E.
Miasojedovas, S.
Kurilčik, G.
Žukauskas, A.
Chen, C. Q.
Yang, J. W.
Adivarahan, V.
Asif Khan, M.
Powiązania:
https://bibliotekanauki.pl/articles/2038100.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:
Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient of luminescence featured a significant enhancement in nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial lateral overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells was shown to be determined by the substrate quality.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 567-573
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes
Autorzy:
Juršėnas, S.
Miasojedovas, S.
Kurilčik, G.
Liuolia, V.
Žukauskas, A.
Chen, C. Q.
Yang, J. W.
Kuokštis, E.
Adivarahan, V.
Asif Khan, M.
Powiązania:
https://bibliotekanauki.pl/articles/2041736.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:
GaN epilayers and AlGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on different crystal planes (c, a, and r) of the sapphire substrate were studied by excitation intensity dependent and time-resolved photoluminescence. In polar multiple quantum wells grown on a- and c-planes, a blueshift of the luminescence band with increasing the excitation energy was observed, indicating that screening of built-in field by free carriers takes place, whereas in nonpolar r-plane grown multiple quantum wells, the luminescence band maintained an almost constant peak position. Full screening of built-in field was achieved at the excitation densities higher than 0.3 mJ/cm$\text{}^{2}$. Under conditions of screened built-in electric field the structures were characterized by carrier lifetime. It was shown that nonpolar multiple quantum wells suffer from high density of nonradiative traps that can be due to substrate related threading dislocations.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 235-239
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Zero-Bias Anomaly in Magnetic Tunnel Junctions
Autorzy:
Yang, H.
Yang, S.
Ilnicki, G.
Martinek, J.
Parkin, S.
Powiązania:
https://bibliotekanauki.pl/articles/1536909.pdf
Data publikacji:
2010-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
73.23.-b
73.22.-f
Opis:
We present experimental results, which may indicate the possibility of the coexistence of the Kondo effect and ferromagnetism in macroscopic planar magnetic tunnel junctions with a layer of nanodots inside tunnel barriers. A conductance double peak structure was observed. Magnetic field dependence of the splitting of a conductance peak, and temperature evolution of the conductance curves are well explained from the theoretical point of view according to the predictions of the Kondo physics and cotunneling in the Anderson quantum dot coupled to ferromagnetic leads.
Źródło:
Acta Physica Polonica A; 2010, 118, 2; 316-318
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analytic Equation of State and Thermodynamic Properties, for α-, β-, and γ-Si₃N₄ Based on Analytic Mean Field Approach
Autorzy:
Wang, L.
Sun, J.
Yang, W.
Tian, R.
Powiązania:
https://bibliotekanauki.pl/articles/1812044.pdf
Data publikacji:
2008-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.10.+h
65.40.-b
61.66.Fn
Opis:
The analytic mean field potential approach is applied to α-, β-, and γ-Si₃N₄. The analytic expressions for the Helmholtz free energy, internal energy, and equation of state were derived. The formalism for the case of the Morse potential is used in this work. Its six potential parameters are determined through fitting the compression experimental data of α-, β-, and γ-Si₃N₄. The calculated compression curves of α-, β-, and γ-Si₃N₄ are in good agreement with the available experimental data. This suggests that the analytic mean field potential approach is a very useful approach to study the thermodynamic properties of Si₃N₄. Furthermore, we predict the variation of the free energy and internal energy with the molar volume at several higher temperatures and calculate the temperature dependence of the molar volume, bulk modulus, thermal expansion coefficient and isochoric heat capacity at zero pressure.
Źródło:
Acta Physica Polonica A; 2008, 114, 4; 807-818
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 34

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