- Tytuł:
- Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure
- Autorzy:
-
Misiuk, A.
Wierzchowski, W.
Wieteska, K.
Londos, C.
Andrianakis, A.
Bak-Misiuk, J.
Yang, D.
Surma, B. - Powiązania:
- https://bibliotekanauki.pl/articles/1539028.pdf
- Data publikacji:
- 2010-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.05.cp
61.72.-y
61.72.Ff
61.72.uf
62.50.-p - Opis:
- Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × $10^{14} cm^{-3}$ (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.
- Źródło:
-
Acta Physica Polonica A; 2010, 117, 2; 344-347
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł