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Wyświetlanie 1-15 z 21
Tytuł:
Linear and Non-Linear Response in T-Shaped Electron Waveguides
Autorzy:
Bek, M.
Bułka, B.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791289.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.23.-b
73.63.Rt
85.35.Ds
85.35.Be
Opis:
We present theoretical studies of three-terminal ballistic junction in linear and non-linear regime. Various conductance and voltage dips and peaks are observed and their origin is explained as influence of the bend resistance and the threshold effect.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 829-831
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An Investigation of Optical Vibrations in Zn$\text{}_{3}$P$\text{}_{2}$
Autorzy:
Misiewicz, J.
Wrobel, J. M.
Clayman, B. P.
Powiązania:
https://bibliotekanauki.pl/articles/1887203.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.-e
78.30.Hv
Opis:
Reflectivity and transmittivity spectra of Zn$\text{}_{3}$P$\text{}_{2}$ in the far infrared region were measured at several temperatures. Raman scattering spectra at 295 K were also measured. Results of these measurements were interpreted in terms of one-phonon and multi-phonon transitions.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 405-409
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Room Temperature Ferroelectric Mixture of Chiral and Achiral Thioesters
Autorzy:
Czerwiec, J.
Ossowska-Chruściel, M.
Chruściel, J.
Wróbel, S.
Powiązania:
https://bibliotekanauki.pl/articles/1538218.pdf
Data publikacji:
2010-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.84.Nh
78.15.+e
64.70.M-
Opis:
Dielectric properties of the mixture of two thioester compounds: 4-8-alkoxy-benzoate-thio-carboxyl S-4-pentyl-phenyl (8OS5), (s)-4-(1-methyl-heptyloxy)biphenyl-4-thio-carboksyl 4-9-alkil-phenyl (MHOBS9) are presented. The chiral compound exhibits nematic (N*) and ferroelectric smectic C* phase (SmC*). The achiral compound shows N, SmA and monotropic SmC and SmB phases. the mixture of both compounds of 0.5 molar fraction shows SmC* in the wider temperature range than pure MHOBS9. The mixture was studied using frequency domain dielectric spectroscopy. Dielectric measurements for the SmC* phase of the mixture revealed Goldstone mode at higher frequencies and Maxwell-Wagner relaxation at low frequencies.
Źródło:
Acta Physica Polonica A; 2010, 117, 4; 549-552
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ferroelectric Liquid Crystal for Use in a New Generation of LCDs
Autorzy:
Fitas, J.
Marzec, M.
Tykarska, M.
Wróbel, S.
Dąbrowski, R.
Powiązania:
https://bibliotekanauki.pl/articles/1399018.pdf
Data publikacji:
2013-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.84.Nh
64.70.M-
Opis:
The key to improvements in liquid crystalline displays lies in the continuous synthesis and studies of new kinds of liquid crystalline substances. Among them, ferroelectric compounds are the subject of much attention, due to the potential progresses in switching time, colour depth, and other qualities of liquid crystal displays. In this paper we describe the research of the physical properties of 4-(2-methylbutoxy)phenyl 4-(octyloxy)-benzoate for purposes of its potential application in liquid crystal displays.
Źródło:
Acta Physica Polonica A; 2013, 124, 6; 954-958
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dielectric and Conductivity Anisotropy in Liquid Crystalline Phases of Strongly Polar Thioesters
Autorzy:
Mikułko, A.
Fraś, M.
Marzec, M.
Wróbel, S.
Ossowska-Chruściel, M.
Chruściel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813171.pdf
Data publikacji:
2008-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.30.-v
61.30.Eb
77.22.-d
66.10.Ed
Opis:
The main objective of this paper is to study dielectric properties of two compounds of acronyms 5OSCl and 6OSCl having strongly polar bond (C-Cl) at para position. Dielectric measurements were done in the frequency range from 40 Hz to 15 MHz. The dielectric spectra were measured for two principal alignments. For homeotropic alignment, the reorientation of molecule around the short molecular axis was observed. Both substances studied exhibit large positive dielectric anisotropy and the anisotropy of conductivity was obtained in smectic A as well as nematic phase.
Źródło:
Acta Physica Polonica A; 2008, 113, 4; 1155-1160
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mechanical and Electrical Properties, of ZnO-Nanowire/Si-Substrate Junctions Studied by Scanning Probe Microscopy
Autorzy:
Aleszkiewicz, M.
Fronc, K.
Wróbel, J.
Klepka, M.
Wojtowicz, T.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/2047440.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Ef
68.37.Ps
68.65.La
73.21.Hb
78.67.Lt
Opis:
Scanning tunneling spectroscopy was used to check the tunneling I-V characteristics of junctions formed by n-ZnO nanowires deposited on Si substrates with n- and p-type electrical conductivity (i.e. n-ZnO nanowire/n-Si and n-ZnO nanowire/p-Si junctions, respectively). Simultaneously, several phenomena which influence the measured I-V spectra were studied by atomic force microscopy. These influencing factors are: the deposition density of the nanowires, the possibility of surface modification by tip movement (difference in attraction forces between nanowires and the p-Si and n-Si) and the aging of the surface.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 255-260
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dielectric Properties of Ferroelectric Liquid Crystals with Diversified Molecular Structure
Autorzy:
Czerwiec, J.
Dąbrowski, R.
Żurowska, M.
Ziobro, D.
Wróbel, S.
Powiązania:
https://bibliotekanauki.pl/articles/1538235.pdf
Data publikacji:
2010-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.84.Nh
78.15.+e
64.70.M-
Opis:
Mesomorphic, thermodynamic, electro-optic and dielectric properties of three homologues of fluorosubstituted esters are described. Full chemical names of these compounds are as follows: (S)-(+)-4-(1-metyl-hepty-loksy)benzoate-(6-penta-fluoro-propano-ynloxyhex-1-oxy)-biphenyl-4-yl (in short 2F6BBiOC8), (S)-(+)-4-(1-metyl-hepty-loksy)benzoate-(6-nona-fluoro-pentano-yloxyhex-1-oxy)-biphenyl-4-yl (in short 4F6BBiOC8), (S)-(+)-4-(1-metyl-hepty-loksy)benzoate-(6-trideca-fluoro-heptano-yloxyhex-1-oxy)-biphenyl-4-yl (in short 6F6BBiOC8). The compounds exhibit ferroelectric smectic C* phase between crystalline and isotropic phase. Only one compound (6F6BBiOC8) shows antiferroelectric phase $(SmC_{A}^\ast)$ observed by dielectric spectroscopy, but the range of this phase is narrow of about 2°. All three compounds exhibit in the SmC* phase Goldstone mode and Maxwell-Wagner relaxation hidden in the conductivity contribution at low frequencies, whereas in the $SmC_{A}^\ast$ phase two anti-ferroelectric modes (AFM1) and (AFM2) contribute to the dielectric spectrum. The compounds were studied using differential scanning calorimetric, frequency domain dielectric spectroscopy, and reversal currents method to determine spontaneous polarization.
Źródło:
Acta Physica Polonica A; 2010, 117, 4; 553-556
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Two-Dimensional Electron Gas in LPE-Grown GaInAs-InP Heterostructures
Autorzy:
Fronc, K.
Grabecki, G.
Wróbel, J.
Dietl, T.
Gajewska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1891365.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Df
73.20.Dx
73.60.Br
Opis:
A series of GaInAs/InP heterostructures was grown by liquid phase epitaxy. The heterostructures were characterized by magnetotransport measurements carried out down to 1.8 K and up 10 T. The results demonstrate the existence of the high-mobility two-dimensional electron gas in the narrow-gap GaInAs as well as the presence of residual conductance through the InP buffer layer.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 449-452
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetoplasmons in a High Electron Mobility GaAs/AlGaAs Heterostructure
Autorzy:
Białek, M.
Karpierz, K.
Piętka, B.
Grynberg, M.
Łusakowski, J.
Czapkiewicz, M.
Fronc, K.
Wróbel, J.
Umansky, V.
Powiązania:
https://bibliotekanauki.pl/articles/1409613.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Mf
Opis:
We have observed a multimode spectrum of magnetoplasmons in the Hall bars processed on a high electron mobility GaAs/AlGaAs heterostructure. We have found that the dispersion relation of these excitation follows square root dependence. Calculated wavelength of the fundamental magnetoplasmon mode fits to the width of sample.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1096-1098
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Terahertz Response of a Point Contact Based on CdTe/CdMgTe Quantum Well in Magnetic Field
Autorzy:
Grigelionis, I.
Białek, M.
Grynberg, M.
Czapkiewicz, M.
Kolkovskiy, V.
Wiater, M.
Wojciechowski, T.
Wróbel, J.
Wojtowicz, T.
But, D.
Knap, W.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1409358.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Hi
73.20.Mf
Opis:
A photoresponse at THz frequencies of a quantum point contact fabricated on a CdTe/CdMgTe quantum well was studied at low temperatures as a function of magnetic field. The spectra show a structure which was interpreted as resulting from the cyclotron resonance and magnetoplasmon excitations. The wavelength of the fundamental magnetoplasmon mode was found to be about 2 μm which coincides with one of dimensions of the point contact. We also discuss the possibility of coupling of magnetoplasmon modes to shallow impurity transitions in the quantum well.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1069-1072
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition
Autorzy:
Bożek, R.
Babiński, A.
Baranowski, J. M.
Stępniewski, R.
Klusek, Z.
Olejniczak, W.
Starowieyski, K.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934054.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
68.55.-a
Opis:
We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 974-976
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low Temperature Processing of Nanostructures Based on II-VI Semiconductors Quantum Wells
Autorzy:
Majewicz, M.
Śnieżek, D.
Wojciechowski, T.
Baran, E.
Nowicki, P.
Wojtowicz, T.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1376129.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.63.Hs
68.37.Hk
62.23.St
Opis:
We report the first results of electron beam lithography processes performed on polymethyl methacrylate (PMMA) and hydrogen silsesquioxane (HSQ) resists, which have been pre-backed in vacuum at T ≤ 90°C. For such low temperature processing the lithographical resolution is reduced as compared to standard procedures, however, the exposure contrast and adhesion to CdTe and HgTe substrates have been sufficient for the fabrication of sub-μ m quantum devices. Furthermore, the new method of electrical microcontact forming is proposed, based on the local melting and annealing of an indium metal layer, performed with the application of accelerated electron beam. The method has been tested for CdTe/CdMgTe quantum wells using the lithography techniques, the exposure parameters have been optimized by inspecting the morphology of annealed metal film via the in situ imaging.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1174-1176
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrostatic Gates for GaN/AlGaN Quantum Point Contacts
Autorzy:
Czapkiewicz, M.
Cywiński, G.
Dybko, K.
Siekacz, M.
Wolny, P.
Gierałtowska, S.
Guziewicz, E.
Skierbiszewski, C.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1403637.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
73.61.Ng
73.23.-b
Opis:
We report on AlGaN/GaN quantum point contacts fabricated by using e-beam lithography and dry ion etching. The tunable nano-constrictions are defined by the integration of side and top gates in a single device. In this configuration, the planar gates are located on the both sides of a quantum channel and the metallic top gates, which cover the active region, are separated from the substrate by an insulating and passivating layers of $HfO_2$ or $Al_2O_3//HfO_2$ composite. The properties of devices have been tested at T = 4.2 K. For side gates we have obtained a very small surface leakage current $I_g < 10^{-11}$ A at gate voltages $|V_g|$ < 2 V, however, it is not enough to close the quantum channel. With top gates we have been able to reach the pinch-off voltage at $V_g$ = - 3.5 V at a cost of $I_g ≈ 10^{-6} A$, which has been identified as a bulk leakage current.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1026-1028
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Localization in Sb-Doped Si/SiGe Superlattices
Autorzy:
Dietl, T.
Jaroszyński, J.
Sawicki, M.
Głód, P.
Wróbel, J.
Stöger, G.
Brunthaler, G.
Bauer, G.
Schäffler, F.
Powiązania:
https://bibliotekanauki.pl/articles/1933732.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Cw
72.15.Rn
73.20.Fz
Opis:
Millikelvin studies of in-plane magnetoconductance in short period Si/Ge:Sb superlattices have been carried out in order to examine the effect of anisotropy on quantum localization. The field-induced metal-to-insulator transition has been observed, indicating the existence of extended states. This suggests that despite anisotropy as large as D $\text{}_{∥}$/D$\text{}_{⊥}$ ≈ 10$\text{}^{3}$ the system behaves as 3D in respect of localization by disorder.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 699-702
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dielectric and Electrooptic Investigations of B Phases οf Banana-Shaped Thioesters
Autorzy:
Wierzejska-Adamowicz, M.
Ossowska-Chruściel, D.
Chruściel, J.
Douali, R.
Legrand, Ch.
Marzec, M.
Mikułko, A.
Sikorska, A.
Wróbel, S.
Powiązania:
https://bibliotekanauki.pl/articles/1538244.pdf
Data publikacji:
2010-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.84.Nh
77.84.-s
78.20.Jq
Opis:
Electrooptic and dielectric measurements were done for B phases of two banana-shaped homologues 1,3-phenylene bis{4-[(4-nonylo-xy-benzoyl)sulfanyl]benzoate (9OSOR) and 1,3-phenylene bis{4-[(4-dodecylo-xy-benzoyl)sulfanyl]benzoate (12OSOR). Polarizing microscopy allowed to identify $B_{1}$ phase for 9OSOR and $B_{2}$ phase for 12OSOR on the basis of texture observation. Spontaneous polarization measurements were performed using reversal current method. The current response to applied triangular voltage shows that $B_{1}$ phase is a ferroelectric and $B_{2}$ phase - antiferroelectric one for which two well separated peaks were observed. Polarization for phase $B_{1}$ of 9OSOR is rather small and its temperature dependence is unusual for ferroelectric liquid crystals - it increases with temperature. Spontaneous polarization for $B_{2}$ phase of 12OSOR compound is of about 600 nC/$cm^{2}$. Dielectric spectra measured with bias field for $B_{2}$ phase of 12OSOR show two well separated relaxation processes. In the low frequency range the relaxation process is connected with fluctuations of ferroelectric domains. The relaxation process in the high frequency range appearing also without bias field is connected with molecular reorientation. The dielectric spectra measured for $B_{1}$ phase of 9OSOR with and without bias voltage showed only one dielectric relaxation process connected with molecular reorientation around the short axis.
Źródło:
Acta Physica Polonica A; 2010, 117, 4; 557-561
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 21

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