Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Wiśniewski, G." wg kryterium: Autor


Wyświetlanie 1-4 z 4
Tytuł:
Magneto-Optics of Spontaneous and Field Induced Vortices in Twinned YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$/La$\text{}_{1-x}$Sr$\text{}_{x}$MnO$\text{}_{3}$ Bilayers
Autorzy:
Gerbaldo, R.
Ghigo, G.
Gozzelino, L.
Laviano, F.
Mezzetti, E.
Minetti, B.
Przysłupski, P.
Tsarou, A.
Wiśniewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047210.pdf
Data publikacji:
2007-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.25.Ha
74.25.Qt
74.78.Db
74.78.Fk
Opis:
The electromagnetic coupling between the magnetic and the superconducting layers in perovskite heterostructures is investigated by means of the magneto-optical technique. The quantitative imaging of the magnetic field distribution allows the high-resolution reconstruction of local supercurrent density. Two phenomena arising from the coupling between manganite layer and the YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ superconducting film deposited on top are addressed, i.e., the local effects of the electronic coupling between the compounds and the interaction between the manganite magnetic moments and the vortices in the superconductor. The first issue can be quantified in terms of the local superfluid density depression/enhancement in correspondence to the underlying magnetic structure, both domains and domain walls (in dependence on the orientation and sign of the local magnetization) and of the spontaneous, macroscopic screening current loops generated by the manganite domain walls. The interaction between the local manganite magnetization and the superconducting vortices is also influenced by structural defects because they modulate the magnetic pattern of the manganite. Different channelling phenomena in correspondence to the natural twin boundaries of the substrate, but locally magnetized by pinned domain walls of the manganite on their locations, are recognized.
Źródło:
Acta Physica Polonica A; 2007, 111, 1; 47-55
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-Electron DX State in CdTe:In
Autorzy:
Skierbiszewski, C.
Wiśniewski, P.
Litwin-Staszewska, E.
Suski, T.
Wilamowski, Z.
Zakrzewski, A. K.
Karczewski, G.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/1952096.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
73.61.Ga
Opis:
In this paper we investigate electron emission/capture from/to the DX state of indium in CdTe by means of high pressure freeze-out cycle and steady-state photo-conductivity experiments. The results indicate that the DX state is occupied by two electrons. A comparison with deep level transient spectroscopy data shows that two-electron emission occurs at low temperatures, while one-electron emission takes place at high temperatures.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 927-930
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spatial Correlations of Donor Charges in MBE CdTe
Autorzy:
Suski, T.
Wiśniewski, P.
Litwin-Staszewska, E.
Wasik, D.
Przybytek, J.
Baj, M.
Karczewski, G.
Wojtowicz, T.
Zakrzewski, A.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934021.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
71.55.Gs
Opis:
We present experimental evidence that at high pressures indium donors in CdTe localize electrons in spatially correlated manner. We have studied Hall mobility, μ$\text{}_{H}$, as a function of electron concentration, n$\text{}_{H}$, at T=77 K. Changes of n$\text{}_{H}$ have been achieved by two methods. High pressure freeze-out of electrons onto localized states of In-donors leads to the mobility enhancement with respect to the situation when n$\text{}_{H}$ has been modified by means of a subsequent annealing of the sample. As a result, depending on the degree of spatial correlations in the impurity charges arrangement, different values of μ$\text{}_{H}$ correspond to the same value of n$\text{}_{H}$. The variation of mobility with electron concentration suggests that the localized state of In-donor represents likely negatively charged DX state.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 929-932
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Power Continuous Wave Blue InAlGaN Laser Diodes Made by Plasma Assisted MBE
Autorzy:
Skierbiszewski, C.
Siekacz, M.
Wiśniewski, P.
Perlin, P.
Feduniewicz-Żmuda, A.
Cywiński, G.
Smalc, J.
Grzanka, S.
Grzegory, I.
Leszczyński, M.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2047002.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
85.35.Be
42.60.By
73.21.Cd
Opis:
Room temperature, continuous wave operation of InGaN multi-quantum wells laser diodes made by rf plasma assisted molecular beam epitaxy at 411 nm wavelength is demonstrated. The threshold current density and voltage were 4.2 kA/cm$\text{}^{2}$ and 5.3 V, respectively. High optical power output of 60 mW was achieved. The lifetime of these laser diodes exceeds 5 h with 2 mW of optical output power. The laser diodes are fabricated on low dislocation density bulk GaN substrates, at growth conditions which resembles liquid phase epitaxy. We demonstrate that relatively low growth temperatures (600-700°C) pose no intrinsic limitations for fabrication of nitride optoelectronic components by plasma assisted molecular beam epitaxy.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 345-351
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies