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Wyszukujesz frazę "Sadowski, J. W." wg kryterium: Autor


Wyświetlanie 1-11 z 11
Tytuł:
Conductivity and Superconductivity in Granular Materials
Autorzy:
Gazda, M.
Kusz, B.
Gackowska, J.
Sadowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1812290.pdf
Data publikacji:
2008-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.81.Bd
62.23.Pq
Opis:
Granular metals and superconductors are very interesting materials thanks to their untypical electrical properties caused by the presence of the Coulomb effects, electron and Cooper pair tunnelling and various aspects of disorder. Most typical and widely studied representatives of this group consist of low $T_c$ superconductor granules distributed in insulating matrix (e.g. lead in germanium matrix). In comparison with them a system of granules of high-$T_c$ superconductors embedded in an insulating matrix is more difficult to be experimentally realised. (Bi, Pb)-Sr-Ca-Cu-O materials obtained with solid state crystallisation method may be considered as an example of granular and disordered metals and superconductors. Solid state crystallisation of initially amorphous material leads to formation of 2201 and 2212 granules embedded in the insulating or semiconducting matrix. Further annealing causes increase in size and/or the number of conducting grains and decrease in the width of the insulating barriers between them. In both cases of low- and high-$T_c$ granular materials the main parameters, which determine their properties, are the amount of metallic phases and the tunnelling conductivity between the neighbouring grains. In this work some properties of low- and high-$T_c$ granular materials are discussed and compared.
Źródło:
Acta Physica Polonica A; 2008, 114, 1; 143-148
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrically Detected Magnetic Resonance
Autorzy:
Fedorych, O. M.
Wilamowski, Z.
Jantsch, W.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2038127.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.Pk
72.25.Rb
73.21.Fg
Opis:
We compare the results of electrically detected magnetic resonance in a 2D electron gas in Si/SiGe quantum wells with transport and magnetic resonance measurements on ferromagnetic Ga$\text{}_{1-x}$Mn$\text{}_{x}$As. The results lead us to the conclusion that observation of electrically detected magnetic resonance is possible only in the case of a slow spin relaxation, where the microwave resonant absorption leads to a noticeable change of spin magnetization.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 591-598
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Electrical Properties of Low Concentration SnTe Layers and PbTe/SnTe Heterostructures Grown by MBE
Autorzy:
Sadowski, J.
Grodzicka, E.
Dynowska, E.
Adamczewska, J.
Domagała, J.
Przedpelski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1968416.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.Hg
81.15.Gh
Opis:
We analyse properties of thin SnTe layers and PbTe/SnTe heterostructures grown by MBE on BaF$\text{}_{2}$(111) substrates. Reflection high energy electron diffraction patterns registered during MBE growth of the samples as well as post-growth X-ray diffraction measurements evidence a high structural perfection of 0.6 μm thick SnTe layers and (50 Å PbTe)/(50 Å SnTe) superlattices. The full width at half maximum values of (222) X-ray rocking curves measured for these thin SnTe layers crystallized in the optimal MBE growth conditions are about 300 arcsec; the carrier concentrations can be tuned from 5×10$\text{}^{19}$ cm$\text{}^{-3}$ to 10$\text{}^{2 1}$ cm$\text{}^{-3}$ depending on the MBE process parameters.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 967-970
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs
Autorzy:
Bak-Misiuk, J.
Dynowska, E.
Romanowski, P.
Misiuk, A.
Sadowski, J.
Caliebe, W.
Powiązania:
https://bibliotekanauki.pl/articles/1431599.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
75.50.Pp
81.40.Vw
Opis:
Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500°C under ambient and enhanced hydrostatic pressure (1.1 GPa), of $Ga_{1-x}Mn_xAs//GaAs$ layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230°C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 903-905
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical, Magnetic, and Structural Properties of Sn$\text{}_{1-x}$Mn$\text{}_{x}$Te Layers Grown by Molecular Beam Epitaxy
Autorzy:
Nadolny, A. J.
Sadowski, J.
Story, T.
Dobrowolski, W.
Arciszewska, M.
Świątek, K.
Kachniarz, J.
Adamczewska, J.
Powiązania:
https://bibliotekanauki.pl/articles/1992036.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
68.55.-a
Opis:
Layers of Sn$\text{}_{1-x}$Mn$\text{}_{x}$Te (x ≤ 0.1) with thickness 0.2-2 μm were grown by molecular beam epitaxy on BaF$\text{}_{2}$ substrates with a 0.01-1 μm thick SnTe buffer layer. Both SnTe and Sn$\text{}_{1-x}$Mn$\text{}_{x}$Te layers show metallic p-type conductivity with conducting hole concentrations (at T=77 K) p$\text{}_{77}$=7×10$\text{}^{19}$ -2×10$\text{}^{21}$ cm$\text{}^{-3}$. The layers grown under the conditions of an extra Te flux have a high carrier concentration and exhibit ferromagnetic phase transition at T$\text{}_{C}$ ≤ 7 K. The layers grown with no (or very low) additional Te flux show low carrier concentrations (below 10$\text{}^{20}$ cm$\text{}^{-3}$) and remain paramagnetic in the temperature range studied T=4.5÷70 K.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 449-453
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fermi Level Position in GaMnAs - a Thermoelectric Study
Autorzy:
Osinniy, V.
Jędrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2027483.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
73.50.-h
Opis:
Thermoelectric power was studied in the temperature range 100≤ T≤300 K in 0.3-1μm thick ferromagnetic Ga$\text{}_{1-x}$Mn$\text{}_{x}$As epitaxial layers (0.015≤ x≤0.06) in order to determine Fermi energy E$\text{}_{F}$ and carrier concentration p. For 0.015≤ x≤0.05, at T=273 K we find E$\text{}_{F}$=275±50 meV and p=(2.5± 0.5)×10$\text{}^{20}$ cm$\text{}^{-3}$ (approximately Mn content independent). For x= 0.06, the Fermi energy decreases by about 100 meV with the corresponding reduction of hole concentration to p=1.2×10$\text{}^{20}$ cm$\text{}^{-3}$. At T=120 K, these parameters vary between E$\text{}_{F}$=380 meV and p=3.5×10$\text{}^{20}$ cm$\text{}^{-3}$ for x=0.015 to E$\text{}_{F}$=110 meV and p=5×10$\text{}^{19}$ cm$\text{}^{-3}$ for x=0.06.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 327-334
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interval Identification of FMR Parameters for Spin Reorientation Transition in (Ga,Mn)As
Autorzy:
Gutowski, M.
Stefanowicz, W.
Proselkov, O.
Sawicki, M.
Żuberek, R.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1428597.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.05.Kf
68.47.Fg
75.30.Gw
75.50.Pp
75.70.-i
75.70.Ak
75.70.Cn
75.70.Rf
76.50.+g
Opis:
In this work we report results of ferromagnetic resonance studies of a 6% 15nm (Ga,Mn)As layer, deposited on (001)-oriented GaAs. The measurements were performed with in-plane oriented magnetic field, in the temperature range between 5 K and 120 K. We observe a temperature induced reorientation of the effective in-plane easy axis from $[\overline{1}10]$ to [110] direction close to the Curie temperature. The behavior of magnetization is described by anisotropy fields, $H_{eff}$ (=4π $M-H_{2⊥}$), $H_{2∥},$ and $H_{4∥}$. In order to precisely investigate this reorientation, numerical values of anisotropy fields have been determined using powerful - but still largely unknown - interval calculations. In simulation mode this approach makes possible to find all the resonance fields for arbitrarily oriented sample, which is generally intractable analytically. In "fitting" mode we effectively utilize full experimental information, not only those measurements performed in special, distinguished directions, to reliably estimate the values of important physical parameters as well as their uncertainties and correlations.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 1228-1230
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetotransport through Nanoconstriction in Ferromagnetic Semiconductor (Ga,Mn)As
Autorzy:
Figielski, T.
Wosiński, T.
Pelya, O.
Sadowski, J.
Morawski, A.
Mąkosa, A.
Dobrowolski, W.
Jagielski, J.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/2035752.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.-b
75.60.-d
73.20.Fz
Opis:
We studied narrow (submicron) constrictions in the layers of ferromagnetic semiconductor (Ga,Mn)As. We have demonstrated a contribution of the quantum localization effects to the magnetoresistance of the constricted samples. We have also found a negative contribution of a domain wall trapped in the constriction to the resistance, due presumably to the erasing of the localization effects by the domain wall.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 525-531
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defect Structure of High-Temperature-Grown GaMnSb/GaSb
Autorzy:
Romanowski, P.
Bak-Misiuk, J.
Dynowska, E.
Domagala, J.
Sadowski, J.
Wojciechowski, T.
Barcz, A.
Jakiela, R.
Caliebe, W.
Powiązania:
https://bibliotekanauki.pl/articles/1539009.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
68.37.Hk
68.49.Sf
68.55.ag
68.55.Ln
Opis:
GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of $Ga_{1-x}Mn_{x}Sb$ layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 341-343
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Planar Hall Effect in Ferromagnetic (Ga,Mn)As/GaAs Superlattices
Autorzy:
Wesela, W.
Wosiński, T.
Mąkosa, A.
Figielski, T.
Sadowski, J.
Terki, F.
Charar, S.
Powiązania:
https://bibliotekanauki.pl/articles/2047701.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
75.50.Pp
75.30.Gw
85.75.-d
Opis:
The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ga,Mn)As/GaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magnetocrystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane 〈100〉 directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 369-373
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interlayer Exchange Coupling in Short Period GaMnAs/GaAs Superlattices
Autorzy:
Szuszkiewicz, W.
Dynowska, E.
Hennion, B.
Ott, F.
Jouanne, M.
Morhange, J. F.
Karlsteen, M.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2027487.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.12.-q
75.25.+z
78.30.Fs
Opis:
The low dimensional structures containing III-V ferromagnetic semiconductors were intensively investigated in the last few years because of the variety of their potential applications. The aim of the present work was to study the interlayer exchange coupling in the short period GaMnAs/GaAs superlattices containing 16 or 8 GaMnAs monolayers. Samples with the magnetic layers corresponding to the mixed crystal composition with 5% or 6% of Mn were grown by MBE technique and characterized by both high-resolution X-ray diffraction and Raman scattering methods. Folded acoustic phonons were observed for the first time for this particular quantum system in the Raman scattering spectra. The interlayer exchange coupling in selected superlattices was investigated by both elastic neutron scattering (diffraction) and polarized neutron reflectivity measurements. Presence of the smooth interfaces and the stability of the superlattice period were confirmed by neutron reflectometry data. Ferromagnetic correlation of the magnetization vector in subsequent GaMnAs magnetic layers was demonstrated by both experimental methods.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 335-341
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-11 z 11

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