Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Płaczek, J." wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-11 z 11
    Tytuł:
    Impedance Spectroscopy of Au-CdTe:Ga Schottky Contacts
    Autorzy:
    Płaczek-Popko, E.
    Trzmiel, J.
    Gumienny, Z.
    Wojtyna, E.
    Szatkowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811971.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    85.30.De
    84.37.+q
    Opis:
    The dielectric response of Au-CdTe gallium doped Schottky contacts was investigated by impedance spectroscopy in the frequency range from 0.2 Hz to 3 MHz, at temperatures in the range from 77 K to 300 K. Combined modulus and impedance spectroscopic plots were analyzed to study the response of the structure. The data were fitted with the simple RC circuit composed of a depletion layer capacitance in parallel with resistance and a series resistance of the bulk CdTe:Ga. The activation energy of the bulk trap obtained from the Arrhenius plot of the resistance was found to be equal to 0.08 eV, close to the value 0.09 eV obtained from the impedance-modulus spectroscopy. The trap dominant in CdTe:Ga is possibly the DX center related, as it has been observed that this is the dominant trap in the material.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1279-1283
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Non-Exponential Photoionization of the DX Centers in Gallium Doped CdTe and $Cd_{0.99}Mn_{0.01}Te$
    Autorzy:
    Trzmiel, J.
    Płaczek-Popko, E.
    Weron, K.
    Szatkowski, J.
    Wojtyna, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812001.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Gs
    61.72.jj
    78.20.Bh
    Opis:
    The low temperature non-exponential transients of photoconductivity build-up in gallium doped $Cd_{0.99}Mn_{0.01}Te$ and CdTe alloys possessing DX centers were studied. It was found that the two-exponential model commonly used to explain the persistent photoconductivity growth in semiconductors with DX centers describes properly solely the photokinetics obtained for CdTe:Ga. In the case of $Cd_{0.99}Mn_{0.01}Te:Ga$ the stretched-exponential approach is more appropriate, for it explains the short-time power-law exhibited by the experimental data.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1417-1420
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    On the Frequency Domain Relaxation Processes in Gallium Doped CdTe and $Cd_{0.99}Mn_{0.01}Te$
    Autorzy:
    Trzmiel, J.
    Płaczek-Popko, E.
    Zielony, E.
    Gumienny, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791364.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Gs
    61.72.jj
    77.22.-d
    Opis:
    The dielectric response of gallium doped $Cd_{0.99}Mn_{0.01}Te$ and CdTe alloys possessing DX centers was studied by impedance spectroscopy. Complex modulus and impedance spectroscopic plots were analyzed. Near ideal Debye response of CdTe:Ga was observed, whereas for $Cd_{0.99}Mn_{0.01}Te:Ga$ samples non-Debye behavior was stated. Different relaxation responses may be related to various local atomic configurations in the vicinity of the DX centers in the studied materials.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 956-958
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    DLTS Study of Be-Doped p-Type AlGaAs/GaAs MBE Layers
    Autorzy:
    Szatkowski, J.
    Płaczek-Popko, E.
    Sierański, K.
    Hansen, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992215.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    71.55.Eq
    Opis:
    Deep-level transient spectroscopy method was applied to study deep hole traps in p-type Al$\text{}_{0.5}$Ga$\text{}_{0.5}$As grown on GaAs semi-insulating substrate by MBE. Five hole traps labelled by us as H0 to H4 were found. For the traps H1, H3 and H4 thermal activation energies obtained from Arrhenius plots were equal to: E$\text{}_{H1}$=0.15 eV, E$\text{}_{H3}$=0.4 eV, and E$\text{}_{H4}$=0.46 eV. Hole emission from the trap H2 was electric field dependent with the thermal activation energy extrapolated to zero-field equal to 0.37 eV. Capture cross-sections for the traps H1 and H4 were thermally activated with energetic barriers 0.04 eV (for H1) and 0.18 eV (for H4).
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 565-569
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical Properties of Au/n-GaAs$\text{}_{1-x}$Sb$\text{}_{x}$ Contacts
    Autorzy:
    Szatkowski, J.
    Kasprzak, J. F.
    Płaczek-Popko, E.
    Radojewska, E. B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1879840.pdf
    Data publikacji:
    1991-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Ei
    72.80.Ey
    Opis:
    The Schottky barrier heights of Au on n-type GaAs$\text{}_{1-x}$Sb$\text{}_{x}$ were measured with I-V, C-V, and photoresponse (PR) techniques. The barrier height was determined to be 0.65, 0.75 and 0.7 eV, respectively.
    Źródło:
    Acta Physica Polonica A; 1991, 79, 2-3; 179-182
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Deep Levels in Cd$\text{}_{0.99}$Mn$\text{}_{0.01}$Te:Ga
    Autorzy:
    Szatkowski, J.
    Płaczek-Popko, E.
    Sierański, K.
    Bieg, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992339.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    71.55.Gs
    Opis:
    Two types of samples were studied. In the material with higher donor concentration four electron traps labelled by us as E1 to E4 were found. For the traps E2 and E3 energies obtained from Arrhenius plots are equal to 0.24 eV and 0.36 eV, respectively. Electric field enhanced electron emission from the levels E1 and E4 was observed and described in terms of Frenkel-Poole mechanism. Capture process from the traps E2 was found to be thermally activated with energetic barriers equal to 0.20 eV for E2.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 575-578
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical Characterization of Defects in Schottky Au-CdTe:Ga Diodes
    Autorzy:
    Dyba, P.
    Płaczek-Popko, E.
    Zielony, E.
    Gumienny, Z.
    Szatkowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791359.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    85.30.De
    84.37.+q
    Opis:
    Deep electron states in gallium doped CdTe have been studied by deep-level transient spectroscopy method. The Schottky Au-CdTe diodes were processed to perform the investigations. Rectifying properties of diodes have been examined by the room temperature current-voltage and capacitance-voltage measurements. Deep-level transient spectroscopy measurements performed in the range of temperatures 77-350 K yield the presence of three electron traps. The thermal activation energies and apparent capture cross-sections have been determined from related Arrhenius plots. The dominant trap of activation energy $E_2$ = 0.33 eV and capture cross-section σ_2 = 3 × $10^{-15} cm^2$ has been assigned to the gallium related DX center present in the CdTe material.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 944-946
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Capacitance-Voltage Studies of Ti/p-ZnTe Schottky Barrier Structures Containing CdTe Quantum Dots
    Autorzy:
    Placzek-Popko, E.
    Szatkowski, J.
    Zielony, E.
    Gumienny, Z.
    Dobaczewski, L.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048047.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    73.21.La
    73.20.Hb
    Opis:
    In this paper the electronic states of self-organized CdTe quantum dots embedded in ZnTe matrix are studied by means of capacitance-voltage (C-V) characteristics within the temperature range of 180-300 K. A reference diode of the same layer structure but without quantum dots is studied also for comparison. The C-V characteristics measured for the reference diode exhibit bulk behaviour in contrast to the quantum dots sample for which a characteristic step corresponding to discharging of quantum dots is clearly visible within broad range of temperatures. A quasistatic model based on the self-consistent solution of the Poisson equations is used to simulate the capacitance. By comparison the calculated C-V curve with experimental curve the apparent thermal activation energy for hole emission from the quantum dots to the ZnTe matrix is found to be equal to (0.12 ± 0.03) eV.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 621-623
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Deep Level Transient Spectroscopy Studies of CdMnTe
    Autorzy:
    Szatkowski, J.
    Płaczek-Popko, E.
    Hajdusianek, A.
    Kuźmiński, S.
    Bieg, B.
    Becla, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1873000.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.30.+y
    Opis:
    Deep levels in Ga doped n-type CdMnTe of 1% and 5% Mn contents and In doped n-type CdMnTe of 20% Mn content were studied using deep level transient spectroscopy technique. Our deep level transient spectroscopy results show presence of several groups of different traps.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 387-390
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hole Traps in ZnTe with CdTe Quantum Dots
    Autorzy:
    Zielony, E.
    Płaczek-Popko, E.
    Gumienny, Z.
    Trzmiel, J.
    Karczewski, G.
    Guziewicz, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791335.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    73.21.La
    73.20.Hb
    Opis:
    In this study the capacitance-voltage (C-V) and deep level transient spectroscopy measurements have been performed on ZnTe (p-type)-Ti/Al Schottky diodes containing a layer of CdTe self-assembled quantum dots and on the reference diodes without dots for comparison. Both kinds of investigated samples were grown by molecular beam epitaxy technique. The dots were formed during the Stransky-Krastanov growth mode. Comparison of the C-V and deep level transient spectroscopy results obtained for both samples allows us to conclude that the 0.26 eV trap observed exclusively for the QD sample can be assigned to some defects in a wetting layer or CdTe/ZnTe interface.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 885-887
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Deep Levels Induced by CdTe/ZnTe Quantum Dots
    Autorzy:
    Zielony, E.
    Placzek-Popko, E.
    Roznicka, A.
    Gumienny, Z.
    Szatkowski, J.
    Dyba, P.
    Pacuski, W.
    Kruse, C.
    Hommel, D.
    Guziewicz, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048061.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    73.21.La
    73.20.Hb
    Opis:
    The electrical properties of the CdTe/ZnTe quantum dot system have been analyzed to identify deep-level defects related with the presence of quantum dots. The capacitance-voltage (C-V) and deep level transient spectroscopy measurements were used to investigate the samples. A reference ZnTe sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the n-type GaAs substrate. The quantum dots were formed by a Zn-induced reorganization of a thin CdTe layer. The presence of quantum dot formation was confirmed by micro-photoluminescence measurements. The deep level transient spectra for both samples are complex. In order to characterize individual contributions to the deep level transient spectra the latter have been simulated by separated Gaussian components [1]. The results of the deep level transient spectroscopy measurements yield the conclusion that the same defects are present in both materials but there is an increased concentration of the defects in the quantum dot structures. No deep level associated directly with the quantum dot confinement has been identified.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 630-632
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies