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Wyszukujesz frazę "Orlowski, T." wg kryterium: Autor

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    Wyświetlanie 1-11 z 11
    Tytuł:
    Entropy Based Trees to Support Decision Making for Customer Churn Management
    Autorzy:
    Gajowniczek, K.
    Orłowski, A.
    Ząbkowski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398869.pdf
    Data publikacji:
    2016-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    05.45.Tp
    05.40.Ca
    07.05.Kf
    07.05.Mh
    Opis:
    In this work we analyze empirically customer churn problem from a physical point of view to provide objective, data driven and significant answers to support decision making process in business application. In particular, we explore different entropy measures applied to decision trees and assess their performance from the business perspective using set of model quality measures often used in business practice. Additionally, the decision trees are compared with logistic regression and two machine learning methods - neural networks and support vector machines.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 5; 971-979
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mining Associations on the Warsaw Stock Exchange
    Autorzy:
    Karpio, K.
    Łukasiewicz, P.
    Orłowski, A.
    Ząbkowski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400174.pdf
    Data publikacji:
    2013-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    89.65.Gh
    07.05.Kf
    07.05.Rm
    Opis:
    Identification of patterns in stock markets has been an important subject for many years. In the past, numerous techniques, both technical and econometric, were used to predict changes in stock markets, but dependences among all the companies listed on a stock market were considered in a limited extent. Numerous studies confirm that larger stocks items appear to influence smaller ones and that, on a global level, most of the world's stock markets are integrated. Therefore, this study implements the association rules using a data mining approach to explore the co-movement between stock items listed on the Warsaw Stock Exchange. We believe that in order to describe and to understand market's behavior, data mining techniques are more flexible in use than for instance pricing models based on a finance theory. The former seems to be more effective for explaining market behavior without making particular assumptions.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 3; 553-559
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Q-Entropy Approach to Selecting High Income Households
    Autorzy:
    Gajowniczek, K.
    Karpio, K.
    Łukasiewicz, P.
    Orłowski, A.
    Ząbkowski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1388367.pdf
    Data publikacji:
    2015-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    05.45.Tp
    05.40.Ca
    07.05.Kf
    07.05.Mh
    Opis:
    A generalized algorithm for building classification trees, based on Tsallis q-entropy, is proposed and applied to classification of Polish households with respect to their incomes. Data for 2008 are used. Quality measures for obtained trees are compared for different values of q parameter. A method of choosing the optimum tree is elaborated.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 3A; A-38-A-44
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Gd 4f and 5d Electrons in Sn$\text{}_{0.96}$Gd$\text{}_{0.04}$Te Valence Band
    Autorzy:
    Orłowski, B. A.
    Kowalski, B. J.
    Gołacki, Z.
    Story, T.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933933.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Fi
    Opis:
    The synchrotron radiation was applied to measure resonant photoemission spectra (Fano-type Gd 4d-4f resonance), constant initial states and constant final states to study the valence band electronic structure of Sn$\text{}_{0.96}$Gd$\text{}_{0.04}$Te crystal. The resonant energy was found equal to 150.3 eV. The electrons 4f were found to contribute to the valence band of the crystal with the maximum located at 9.5 eV below the valence band edge whereas 5d electrons contribute at the crystal valence band edge.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 857-860
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fano Resonance Investigation of PbTe Layers Containing Eu and Gd Ions
    Autorzy:
    Orlowski, B.
    Osinniy, V.
    Dziawa, P.
    Pietrzyk, M.
    Kowalski, B.
    Taliashvili, B.
    Story, T.
    Johnson, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812243.pdf
    Data publikacji:
    2008-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    Opis:
    The Fano resonance photoemission studies of Gd/(Pb, Gd)Te layers using synchrotron radiation were carried out and the electronic structure parameters like binding energies of $Gd^{3+}$ 4f and 5p shells, resonance and antiresonance energies for $Gd^{3+}$ were determined. The presence of $Eu^{3+}$ ions was observed in the (Pb, Eu)Te and (Eu, Gd)Te layers grown by MBE technique. The comparison of data for (Pb, Gd)Te compound with corresponding data for (Eu, Gd)Te and (Pb, Eu)Te layers indicates that we are not able to distinct the $Eu^{3+}4f$ and $Gd^{3+}4f$ electrons contribution to the valence band photoemission spectra because of small content od Gd and similar binding energy values. The key parameters allowing to prove exactly the presence of either $Eu^{3+}$ or $Gd^{3+}$ are the resonance and antiresonance energies which are significantly different for these ions and equal to 143 eV/137 eV and 150 eV/142 eV, respectively.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 2; 351-356
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Valence Band Density of States and Mn 3d Contribution in Mn$\text{}_{1-x}$Mg$\text{}_{x}$Te
    Autorzy:
    Kowalski, B. J.
    Guziewicz, E.
    Kopalko, K.
    Orłowski, B. A.
    Janik, E.
    Wojtowicz, T.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991616.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.Nr
    79.60.-i
    Opis:
    Resonant photoemission spectroscopy was applied to determine the Mn 3d derived contribution to the valence band density of states of Mn$\text{}_{0.44}$ Mg$\text{}_{0.56}$Te grown by molecular beam epitaxy on a GaAs(001) substrate. The modifications of the valence band density-of-states distribution are discussed as a consequence of the substitution of Mg ions for Mn ions.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 401-405
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors
    Autorzy:
    Pietrzyk, M.
    Kowalski, B.
    Orlowski, B.
    Knoff, W.
    Story, T.
    Dobrowolski, W.
    Slynko, V.
    Slynko, E.
    Johnson, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538868.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    71.20.Be
    Opis:
    In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 293-295
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cr 3d Surface and Bulk States in Sn$\text{}_{1-x}$Cr$\text{}_{x}$Te/Cr Crystals
    Autorzy:
    Guziewicz, E.
    Szamota-Sadowska, K.
    Kowalski, B. J.
    Grodzicka, E.
    Story, T.
    Orłowski, B. A.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1963380.pdf
    Data publikacji:
    1997-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Fx
    79.60.-i
    Opis:
    We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te/Cr interface formation process. At the clean Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 4; 783-787
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoemission Study of Mn 3d Electrons in the Valence Band of Mn/GeMnTe
    Autorzy:
    Pietrzyk, M. A.
    Kowalski, B. J.
    Orłowski, B. A.
    Knoff, W.
    Osinniy, V.
    Kowalik, I. A.
    Story, T.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047678.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    Opis:
    We present the results of the electronic band structure study of Ge$\text{}_{0.9}$Mn$\text{}_{0.1}$Te epilayers, clean and modified in situ by deposition of manganese atoms. The sets of resonant photoemission spectra were measured for the photon energy range covering the energy of Mn 3p→3d transition (45
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 275-281
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic Resonance and Dielectric Studies of a Nonlinear La$\text{}_{3}$Ga$\text{}_{5.5}$Ta$\text{}_{0.5}$O$\text{}_{14}$ Single Crystal Doped with Erbium
    Autorzy:
    Bodziony, T.
    Typek, J.
    Orlowski, M.
    Majszczyk, J.
    Wabia, M.
    Berkowski, M.
    Ryba-Romanowski, W.
    Guskos, N.
    Likodimos, V.
    Anagnostakis, E. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035732.pdf
    Data publikacji:
    2003
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    76.30.Kg
    77.22.Ch
    Opis:
    Single crystal of erbium doped La$\text{}_{3}$Ga$\text{}_{5.5}$Ta$\text{}_{0.5}$O$\text{}_{14}$ grown by the Czochralski method have been investigated by electron paramagnetic resonance and dielectric spectroscopy methods. Dielectric permittivity ε measurements performed in 90-440 K temperature range have shown negligible dispersion for 1 kHz - 1 MHz frequencies and a Curie-Weiss type behaviour with C=47700 K andθ=-340 K. Electron paramagnetic resonance studies have revealed the presence of two different paramagnetic, monoclinic centres. The calculated g factor values are: g$\text{}_{1}$=1.449, g$\text{}_{2}$=11. 534, g$\text{}_{3}$=4.24 for the main M$\text{}_{1}$ centre and g$\text{}_{1}$=1.98, g$\text{}_{2}$=4.169, g$\text{}_{3}$=4.25 for the weaker M$\text{}_{2}$ centre. The temperature dependence of EPR line intensity for centre M$\text{}_{1}$ and M$\text{}_{2}$ is quite different - while lines attributed to M$\text{}_{1}$ could only be observed at low temperatures, below 20 K, lines of M$\text{}_{2}$ centre persisted up to 200 K. The M$\text{}_{1}$ centre is connected with Er$\text{}^{3+}$ ion entering substitutionally into La$\text{}^{3+}$ site, while M$\text{}_{2}$ is probably connected with 3d ions at the same site, unintentionally introduced into the material as an admixture.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 2-3; 315-322
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fano Resonance of Eu$\text{}^{2+}$ and Eu$\text{}^{3+}$ in (Eu,Gd)Te MBE Layers
    Autorzy:
    Orlowski, B. A.
    Kowalski, B. J.
    Dziawa, P.
    Pietrzyk, M.
    Mickievicius, S.
    Osinniy, V.
    Taliashvili, B.
    Kowalik, I. A.
    Story, T.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044511.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    Opis:
    Resonant photoemission spectroscopy, with application of synchrotron radiation, was used to study the valence band electronic structure of clean surface of (EuGd)Te layers. Fano-type resonant photoemission spectra corresponding to the Eu 4d-4f transition were measured to determine the contribution of 4f electrons of Eu$\text{}^{2+}$ and Eu$\text{}^{3+}$ ions to the valence band. The resonant and antiresonant photon energies of Eu$\text{}^{2+}$ ions were found as equal to 141 V and 132 eV, respectively and for Eu$\text{}^{3+}$ ions were found as equal to 146 eV and 132 eV, respectively. Contribution of Eu$\text{}^{2+}$4f electrons was found at the valence band edge while for Eu$\text{}^{3+}$ it was located in the region between 3.5 eV and 8.5 eV below the valence band edge.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 803-807
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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