- Tytuł:
- Positron Annihilation Studies of Czochralski-Grown Silicon Annealed Under Pressure
- Autorzy:
-
Karwasz, G. P.
Brusa, R. S.
Misiuk, A.
Zecca, A. - Powiązania:
- https://bibliotekanauki.pl/articles/2008074.pdf
- Data publikacji:
- 1999-04
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.60.+z
78.70.Bj
71.55.Cn - Opis:
- Two positron techniques have been applied to study dynamics of oxygen precipitation in Czochralski-grown silicon, annealed under high (up to 1.4 GPa) pressure. Lifetime measurements were performed with 180 ps resolution; Doppler broadening with a variable-energy slow-positron beam. Different thermal treatings rise the mean lifetime of positrons from 222 ps in as-grown samples up to 227 ps. In samples with a high (up to 85%) amount of oxygen precipitated, an intermediate (550-800 ps) lifetime is observed.
- Źródło:
-
Acta Physica Polonica A; 1999, 95, 4; 575-580
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł