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    Wyświetlanie 1-10 z 10
    Tytuł:
    The Influence of Ion Implantation on the Optical Parameters - Refraction and Extinction Coefficients οf the Oxygen-Enriched Layers Covering GaAs Implanted with Indium Ions
    Autorzy:
    Rzodkiewicz, W.
    Kulik, M.
    Pyszniak, K.
    Kobzev, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807545.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    78.66.Qn
    82.80.Yc
    Opis:
    The semi-isolating GaAs (100) samples irradiated with fluence 3 × $10^{15}$ ions/$cm^{2}$ of $In^{+}$ ions were characterized by using the methods: Rutherford backscattering spectroscopy, nuclear reaction analysis and ellipsometric spectroscopy. The values of the thicknesses layers enriched with oxygen and the implanted were determined by the methods of nuclear reaction analysis and Rutherford backscattering spectroscopy. Multilayer models were applied for determination of the optical constants (refraction and extinctions coefficients) of investigated samples. The thickness of native oxide covering the surface of implanted GaAs and refraction coefficients were increased after implantation with indium. The spectrum of extinction indexes as a function of light wavelength has two bands near the light wavelengths 400 nm and 480 nm. The observed effects can be interpreted as formation of local oxides of In and InAs precipitates or ternary alloys in enriched with oxygen layers at the surfaces of implanted GaAs.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-129-S-132
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Atomic Force Microscopy and Quartz Crystal Microbalance Study of the Lectin-Carbohydrate Interaction Kinetics
    Autorzy:
    Lebed, K.
    Kulik, A. J.
    Forró, L.
    Lekka, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047270.pdf
    Data publikacji:
    2007-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    87.64.Dz
    84.37.+q
    87.15.Kg
    82.37.Np
    81.65.Cf
    52.77.Bn
    Opis:
    Two analytical methods, atomic force microscopy and quartz crystal microbalance, were applied to the study of the reaction kinetics occurring between concanavalin A and carboxypeptidase Y, presenting the specific lectin-carbohydrate recognition. The dissociation rate constants for concanavalin A-carboxypeptidase Y complex obtained using both atomic force microscopy and quartz crystal microbalance were of the same order of magnitude: k$\text{}_{diss}$=0.170± 0.060 s$\text{}^{-1}$ and k$\text{}_{diss}$=0.095±0.002 s$\text{}^{-1}$, respectively. In addition, each method alone aided in determining other parameters characterizing the studied interaction. Quartz crystal microbalance permitted us to estimate the association rate (k$\text{}_{ass}$=(5.6 ±0.1)×10$\text{}^{4}$ M$\text{}^{-1}$ s$\text{}^{-1}$) and the equilibrium (K$\text{}_{a}$=(0.59×0.01)×10$\text{}^{6}$ M$\text{}^{-1}$) constants for the binding process occurring between concanavalin A and mannose residues of carboxypeptidase Y under given experimental conditions. Atomic force microscopy in force spectroscopy mode enabled the determination of the energy barrier position of r=2.29±0.04 Å characterizing the dissociation of concanavalin A- carboxypeptidase Y molecular complex. The presented results show that both atomic force microscopy and quartz crystal microbalance can be used to determine quantitative parameters characterizing the specific molecular interaction. Both methods can be easily combined for complementary and/or alternative studies of a chosen molecular interaction. By preparing the samples in the same manner the direct comparison between the data obtained via atomic force microscopy and quartz crystal microbalance can be made.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 2; 273-286
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Increase in Protein Contour Length Depends on Mechanical Unfolding Conditions
    Autorzy:
    Dąbrowska, A.
    Lebed, K.
    Lekka, M.
    Kulik, A.
    Forró, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813503.pdf
    Data publikacji:
    2008-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    87.14.Ee
    87.15.-v
    87.15.He
    87.15.La
    Opis:
    Many proteins in alive organisms have a domain structure providing them the possibility to reversible unfolding, which seems to play an essential role in those processes occurring in tissues which are controlled by mechanical cellular tension. In this work the atomic force microscopy was applied to investigate the mechanical properties of the single molecules of fibronectin, a protein participating in the important mechanical processes in extracellular matrix. The results showed that the conditions of mechanical stretching influence not only the force required to unfolding of a domain but also the increase in protein contour length induced by such unfolding event. Two mean values of the increase in length (called shortly the unfolding length) $L_1$ and $L_2$, were obtained and ascribed to unfolding of either the whole fibronectin domain of type III $(L_2)$ or its fragment $(L_1)$. Both unfolding lengths revealed similar dependence on the stretching conditions. This experimental observation of increase in unfolding length with increasing loading rate was successfully described with a combination of two theoretical models (Bell model and the worm-like-chain model), previously used separately in the analysis of protein unfolding. The general mechanical property of fibronectin domains was emphasized and proposed as a potential determinant of the cellular adhesion.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 2; 753-762
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Gradually Devitrified Co-Based Metallic Glass As a Model Material for Testing Néels Theory of the Rayleigh Rule
    Autorzy:
    Lachowicz, H. K.
    Popławski, F.
    Kane, S. N.
    Kuźmiński, M.
    Kulik, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1995188.pdf
    Data publikacji:
    1999-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Kj
    75.60.Ej
    Opis:
    It is shown in the present paper that gradually devitrified Co-based non-magnetostrictive metallic glass is an excellent model material to verify Louis Néel's theory of the Rayleigh rule. In the course of the calculations, Néel showed that the parameter p=bH$\text{}_{c}$a (where H$\text{}_{c}$ is the coercivity, a and b are the coefficients of a quadratic polynomial expressing the Rayleigh rule) is expected to range between 0.6 (hard magnets) and 1.6 (soft). However, the experimental values of this parameter, reported in the literature for a number of mono- and poly-crystalline magnets, are much greater than those expected from the theory presented by Néel (in some cases even by two orders of magnitude). The measurements, performed for a series of Co-based metallic glass samples annealed at gradually increasing temperature to produce nanocrystalline structures with differentiated density and size of the crystallites, have shown that the calculated values of the parameter p fall within the range expected from Néel theory.
    Źródło:
    Acta Physica Polonica A; 1999, 95, 2; 287-296
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Composition and Structure of Czochralski Silicon Implanted with $H_{2}^{+}$ and Annealed under Enhanced Hydrostatic Pressure
    Autorzy:
    Kulik, M.
    Kobzev, A.
    Misiuk, A.
    Wierzchowski, W.
    Wieteska, K.
    Bak-Misiuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538976.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.U-
    61.72.uf
    66.10.C-
    61.80.Jh
    81.20.-n
    82.80.Yc
    85.40.-e
    Opis:
    Depth distribution of implanted species and microstructure of oxygen-containing Czochralski grown silicon (Cz-Si) implanted with light ions (such as $H^{+}$) are strongly influenced by hydrostatic pressure applied during the post-implantation treatment. Composition and structure of Si:H prepared by implantation of Cz-Si with $H_{2}^{+}$; fluence D = 1.7 × $10^{17} cm^{-2}$, energy E = 50 keV (projected range of $H_{2}^{+}$, $R_{p}(H)$ = 275 nm), processed at up to 923 K under Ar pressure up to 1.2 GPa for up to 10 h, were investigated by elastic recoil detection Rutherford backscattering methods and the depths distributions of implanted hydrogen and also carbon, oxygen and silicon in the near surface were determined for all samples. The defect structure of Si:H was also investigated by synchrotron diffraction topography at HASYLAB (Germany). High sensitivity to strain associated with small inclusions and dislocation loops was provided by monochromatic (λ = 0.1115 nm) beam topography. High resolution X-ray diffraction was also used.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 332-335
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Entropy Change Calculations for Pure Gd and a Ni-Mn-Cu-Ga Heusler Alloy: Constant Field vs. Constant Temperature Experiment
    Autorzy:
    Ferenc, J.
    Kowalczyk, M.
    Wróblewski, R.
    Cieślak, G.
    Sielicki, K.
    Leonowicz, M.
    Kulik, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402338.pdf
    Data publikacji:
    2015-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.30.Sg
    65.40.gd
    Opis:
    The magnetocaloric effect may be assessed indirectly by expressing it as the change in magnetic entropy in varying magnetic field, H, as the function of temperature, T. Magnetization, M=f(T,H), may be experimentally acquired from a series of isothermal measurements with variable field, or from a series of constant field measurements with variable temperature. The accuracy of magnetic entropy calculation depends on the number of series in these experiments. The aim of this work is to determine how little data is sufficient to obtain accurate results of magnetic entropy change calculations, on the basis of real, magnetocaloric materials. Pure gadolinium and a Ni-Mn-Cu-Ga Heusler alloy were studied. For both materials, the magnetic entropy change and relative cooling power were calculated from both experiments, with the decreasing number of experimental data. For both materials, the constant field experiment with only 6 field values provided only a 5% error of calculations, as compared to the experiment with 100 field values. The Arrott plots were also drawn for constant field mode with 6 field values, easily indicating the order of transition. Comparison of the calculation results suggests that the constant field mode magnetization measurement may be more accurate and faster than isothermal mode.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 1; 111-115
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nanocrystal- and Dislocation-Related Luminescence in~Si Matrix with InAs Nanocrystals
    Autorzy:
    Komarov, F.
    Vlasukova, L.
    Milchanin, O.
    Mudryi, A.
    Zuk, J.
    Pyszniak, K.
    Kulik, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504152.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.-w
    78.60.Fi
    Opis:
    We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500°C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050°C. A part of the samples implanted at 25°C was additionally exposed to $H_2^{+}$ ions (100 keV, 1.2 × $10^{16} cm^{-2}$ in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form InAs nanocrystals in the range of sizes of 2-80 nm and create various concentration and distribution of different types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 204-207
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Hot Implantation on Residual Radiation Damage in Silicon Carbide
    Autorzy:
    Rawski, M.
    Żuk, J.
    Kulik, M.
    Droździel, A.
    Lin, L.
    Prucnal, S.
    Pyszniak, K.
    Turek, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504145.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.U-
    78.30.-j
    61.05.Np
    63.50.-x
    79.20.Rf
    81.70.Fy
    Opis:
    Remarkable thermomechanical and electrical properties of silicon carbide (SiC) make this material very attractive for high-temperature, high-power, and high-frequency applications. Because of very low values of diffusion coefficient of most impurities in SiC, ion implantation is the best method to selectively introduce dopants over well-defined depths in SiC. Aluminium is commonly used for creating p-type regions in SiC. However, post-implantation radiation damage, which strongly deteriorates required electric properties of the implanted layers, is difficult to anneal even at high temperatures because of remaining residual damage. Therefore implantation at elevated target temperatures (hot implantation) is nowadays an accepted method to decrease the level of the residual radiation damage by avoiding ion beam-induced amorphization. The main objective of this study is to compare the results of the Rutherford backscattering spectroscopy with channeling and micro-Raman spectroscopy investigations of room temperature and 500°C $Al^{+}$ ion implantation-induced damage in 6H-SiC and its removal by high temperature (up to 1600°C) thermal annealing.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 192-195
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Influence of Annealing Temperature on Magnetic Properties of Vitrovac 6030
    Autorzy:
    Lachowicz, H. K.
    Popławski, F.
    Żuberek, R.
    Kulik, T.
    Ślawska-Waniewska, A.
    Kuźmiński, M.
    Yu, S. C.
    Dynowska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/2011100.pdf
    Data publikacji:
    1999-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Cc
    75.50.Kj
    75.60.Ch
    Opis:
    Co-Fe-Mo-Mn-Si-B metallic glass ribbon (Vitrovac 6030) was subjected to the isothermal annealing at temperatures in the range 523-873 K so as to produce a series of samples with gradually coarser microstructure. For this series of samples a giant increase in the coercivity, exceeding three orders of magnitude, is observed. This increase is interpreted in terms of the strengthening of the pinning effect of the nanocrystalline structure on the moving domain walls. It is shown that the anisotropy of the created crystallites is mainly responsible for the increase in the pinning force since the effective anisotropy seen by the wall becomes larger and larger with the gradual increase in the density and size of the grown particles.
    Źródło:
    Acta Physica Polonica A; 1999, 96, 3-4; 483-494
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Slow Positron Beam Studies of the Stainless Steel Surface Exposed to Sandblasting
    Autorzy:
    Horodek, P.
    Dryzek, J.
    Kobets, A.
    Kulik, M.
    Lokhmatov, V.
    Meshkov, I.
    Orlov, O.
    Pavlov, V.
    Rudakov, A.
    Sidorin, A.
    Siemek, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1336525.pdf
    Data publikacji:
    2014-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    82.80.Yc
    61.82.Bg
    Opis:
    The paper presents slow positron beam studies of the stainless steel grade 304 AISI samples annealed in the flow $N_2$ atmosphere and sandblasted under different pressure from 1 to 7 bar. Heating of specimens caused formation of an additional layer on the surface which can be identified as oxides. Sandblasting reduces the thickness of the oxide layer and also defects concentration (vacancies as we suppose) decreases in dependence on pressure applied during blasting. Additionally, the atomic concentrations of oxygen have been obtained using nuclear methods (Rutherford backscattering and nuclear reactions) in the near surface layers of the studied samples.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 3; 714-717
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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