Autor: Klos, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Influence of Fractional Electromagnetic Radiation Doses on Biosensor Matrix Component Stability
Autorzy:: Kłos-Witkowska, A.
Powiązania:: https://bibliotekanauki.pl/articles/1030537.pdf
Data publikacji:: 2018-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: biosensor
BSA
UV/Vis
receptor layer
electromagnetic field
stabilization
Opis:: In the paper influence of electromagnetic field (200 MHz) on biosensor matrix component was shown. Specially designed test bench containing the scanner 3D with the robot was used for electromagnetic field monitoring. The scans of electromagnetic field distribution, before and behind sample were collected. Conformation change of studied protein was monitored by UV spectra. It indicates that fragmentation and aggregation of studied protein might occur with time. The stabilization effect caused by electromagnetic 200 MHz in protein solution was found. The effect was dose dependent (cumulative effect of electromagnetic field) and the differences in the absorption intensity between the control sample and samples after exposition were more visible with time.
Źródło:: Acta Physica Polonica A; 2018, 133, 1; 101-104
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes
Autorzy:: Madejczyk, P.
Gawron, W.
Piotrowski, A.
Kłos, K.
Rutkowski, J.
Rogalski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1506804.pdf
Data publikacji:: 2010-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.79.Pw
07.57.Kp
73.21.Cd
78.67.Pt
79.60.Jv
Opis:: One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for $P^{+}$-contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, $AsH_3$ precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of $AsH_3$ by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher $R_0A$ product of HgCdTe photodiodes in temperatures close to 230 K.
Źródło:: Acta Physica Polonica A; 2010, 118, 6; 1199-1204
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Experimental Investigation of Few-Nucleon Dynamics at Medium Energies
Autorzy:: Khatri, G.
Bodek, K.
Ciepał, I.
Kalantar-Nayestanaki, N.
Kistryn, St.
Kłos, B.
Kozela, A.
Magiera, A.
Mazumdar, I.
Messchendorp, J.
Parol, W.
Rozpędzik, D.
Skwira-Chalot, I.
Stephan, E.
Wrońska, A.
Zejma, J.
Powiązania:: https://bibliotekanauki.pl/articles/1402633.pdf
Data publikacji:: 2015-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 21.30.-x
24.70.+s
25.10,+s
13.75.Cs
Opis:: An experiment, with unpolarized deuteron beam of 160 MeV impinging on liquid hydrogen and liquid deuterium targets, was carried out using BINA detector at KVI, in Groningen, the Netherlands. Data were collected for the purpose of obtaining high precision differential cross-section for the deuteron break-up reaction. The elastic scattering data were also collected alongside. We present here the methods applied in analysis of data collected in the backward part of the detector.
Źródło:: Acta Physica Polonica A; 2015, 127, 5; 1529-1530
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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