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Wyszukujesz frazę "Hashim, A." wg kryterium: Autor


Wyświetlanie 1-4 z 4
Tytuł:
The Influence of Morphology on Magnetic Properties of Magnetosomes
Autorzy:
Hashim, A.
Molčan, M.
Kovač, J.
Varchulová, Z.
Gojzewski, H.
Makowski, M.
Kopčansky, P.
Tomori, Z.
Timko, M.
Powiązania:
https://bibliotekanauki.pl/articles/1428653.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
47.65.Cb
51.60.+a
75.30.Gw
75.50.Tt
75.60.Nt
75.60.Ej
Opis:
Cultivation process was changed three times. The culture medium was enriched by more amount ferric quinate (FQ magnetosomes sample) and more amounts Wolfe's vitamin solution (WVS magnetosomes sample) comparing to normal culture medium (NP magnetosomes sample). NP sample of magnetosomes shows zero coercivity and behaves superparamagnetically. The increase of coercivity (6.5 Oe for WVS and 20 Oe for FQ) may be caused by higher value of shape anisotropy and reveals stronger magnetic correlations between particles of magnetite chains.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 1250-1252
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Magnetosomes After Exposure to the Effect of the Sonication and Ultracentrifugation
Autorzy:
Molčan, M.
Hashim, A.
Kováč, J.
Rajňák, M.
Kopčanský, P.
Makowski, M.
Gojzewski, H.
Molokáč, M.
Hvizdák, L.
Timko, M.
Powiązania:
https://bibliotekanauki.pl/articles/1368025.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
75.60.-d
87.50.Y-
68.37.-d
Opis:
Magnetosomes are intracellular organelles of widespread aquatic microorganisms called Magnetotactic bacteria. At present they are under investigation especially in biomedical applications. This ability depends on the presence of intracellular magnetosomes which are composed of two parts: first, nanometer-sized magnetite $(Fe_{3}O_{4})$ or greigite $(Fe_{3}S_{4})$ crystals (magnetosome crystal), depending on the bacterial species; and second, the bilayer membrane surrounding the crystal (magnetosome membrane). The magnetosomes were prepared by biomineralization process of magnetotactic bacteria Magnetospirillum Magnetotacticum sp. AMB-1. The isolated magnetosome chains (sample M) were centrifugated at speed of 100000 rpm for 4 hours (sample UM) and sonicated at power of 120 W for 3 hours (sample SM), respectively. The prepared suspensions were investigated with respect to morphological, structural and magnetic properties. The results from scanning electron microscopy showed that isolated chains of magnetosomes were partially broken to smaller ones after ultracentrifugation. On the other hand the application of the sonication process caused the formation of individual magnetosomes (unordered in chain). These results were confirmed by coercivity and magnetization saturation measurements.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 198-199
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Uniform Germanium Islands on Silicon Substrate Using Nickel as Catalyst by Thermal Evaporation Method
Autorzy:
Jumidali, M.
Hashim, M.
Abdul Aziz, A.
Abd Rahim, A.
Powiązania:
https://bibliotekanauki.pl/articles/1193093.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.10.Bk
81.15.-z
Opis:
Uniform germanium islands (GIs) were grown on Si (100) using a nickel layer as catalyst through the physical vapor deposition of germanium (Ge) powder at 1000°C at different deposition times. Prior to the deposition of Ge layer, nickel (Ni) catalyst was deposited on silicon substrates via radio frequency magnetron sputtering technique. Scanning electron microscopy results showed that the increase in deposition time resulted in a variation in surface morphology. Energy dispersive X-ray spectrometer analysis found that the GI samples composed of Ni element indicating the role of Ni in uniform Ge islands formation. The X-ray diffraction pattern spectra revealed that the GIs exhibited a Ge cubic structure and the intensity of Ge peaks varies with deposition time. In-plane strain indicated that the strain caused by the substrate is tensile and changed to compressive strain at the longer deposition time. The Raman spectra exhibited a red shift in the Ge-Ge peak, compared with the bulk Ge, as a result of compressive strain of the GIs. Fourier transform infrared spectrum analysis also indicated that the optical band gap Eg values of GIs can be varied by deposition time.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1068-1071
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Characterizations of~Ge Nanostructures Fabricated by~RF Magnetron Sputtering and Rapid Thermal Processing
Autorzy:
Abd Rahim, A.
Hashim, M.
Rusop, M.
Jumidali, M.
Powiązania:
https://bibliotekanauki.pl/articles/1490688.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.ag
68.60.Dv
61.46.Hk
78.67.Bf
61.05.C-
Opis:
In this work, we use a simple and cost effective technique of sputtering followed by the rapid thermal processing at 900C for 30 s to form Ge nanostructures on the Si(100) substrate. A layer of Ge (300 nm) and Si cap layer (100 nm) were deposited using RF magnetron sputtering. Two samples were prepared: Ge layer with Si capping (Si/Ge/Si) and Ge layer without Si capping (Ge/Si). Scanning electron microscopy shows that subsequent annealing in a rapid thermal processing gives uniformed Ge or SiGe islands with an estimated size of 100-500 nm. For the Ge/Si sample, under post growth annealing there had vanished the deposited Ge layer as confirmed by energy dispersive X-ray analysis. Atomic force microscopy shows that the surface roughness increases by a factor of 15.55% as the islands formed. The Raman spectrum shows that good crystalline structures of the Ge and SiGe peaks are produced. High resolution X-ray diffraction reveals cubic and tetragonal Ge phases with estimated average crystallite sizes of 42 nm and 20 nm, respectively. The results showed that it is possible to grow high quality Ge and SiGe nanostructures using a simple technique of sputtering for potential applications in photonics and high speed devices.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 16-19
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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