Autor: Grodecki, W. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: CVD Growth of Graphene Stacks on 4H-SiC (0001) Surface - X-ray Diffraction and Raman Spectroscopy Study
Autorzy:: Tokarczyk, M.
Kowalski, G.
Grodecki, K.
Urban, J.
Strupiński, W.
Powiązania:: https://bibliotekanauki.pl/articles/1399073.pdf
Data publikacji:: 2013-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.48.Gh
61.72.Dd
63.22.Rc
Opis:: Features associated with short and prolonged growth time in the chemical vapor deposition process of growth of graphene stacks on SiC (0001) substrate are reported. In particular general bimodal (as far as $d_{002}$ interlayer spacing is concerned) distribution of graphene species across the surface of the samples is observed. It consists of thin few layer graphene coverage of most of the sample surface accompanied by thick graphite-like island distribution. It points to the two independent channels of graphene stacks growth with two characteristic growth rates.
Źródło:: Acta Physica Polonica A; 2013, 124, 5; 768-771
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Raman Piezospectroscopy of Phonons in Bulk 6H-SiC
Autorzy:: Grodecki, K.
Wysmołek, A.
Stępniewski, R.
Baranowski, J.
Hofman, W.
Tymicki, E.
Grasza, K.
Powiązania:: https://bibliotekanauki.pl/articles/1791360.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 62.50.-p
42.65.Dr
63.20.-e
78.30.-j
Opis:: Raman piezospectroscopy of high quality 6H-SiC crystals is presented. The crystals used in experiments were grown by the seeded physical vapor transport method. Uniaxial stress up to 0.9 MPa, obtained using a spring apparatus, was applied along [11-20] and [10-10] directions. It was found that the application of uniaxial stress led to different energy shifts of the observed phonon excitations in the investigated 6H-SiC crystals. The obtained pressure coefficients vary in the range 0.98-5.5 $cm^{-1}$ $GPa^{-1}$ for different transverse optical phonon modes. For longitudinal optic phonon modes pressure coefficients in the range 1.6-3.6 $cm^{-1}$ $GPa^{-1}$ were found. The data obtained could be useful in evaluation of local strain fields in SiC based structures and devices including epitaxial graphene.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 947-949
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Raman Studies of Defects in Graphene Grown on SiC
Autorzy:: Grodecki, K.
Bożek, R.
Borysiuk, J.
Strupinski, W.
Wysmolek, A.
Stępniewski, R.
Baranowski, J. M.
Powiązania:: https://bibliotekanauki.pl/articles/2047919.pdf
Data publikacji:: 2011-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.48.Gh
78.30.Fs
Opis:: The Raman scattering studies of multi-layer graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) substrates are presented. Intensity ratio of the D and G bands was used to estimate the average size of the graphene flakes constituting carbon structures. The obtained estimates were compared with flake sizes from atomic force microscopy data. We found that even the smallest structures observed by atomic force microscopy images are much bigger than the estimates obtained from the Raman scattering data. The obtained results are discussed in terms of different average flake sizes inside and on the surface of the multi-layer graphene structure, as well as different type of defects which would be present in the investigated structures apart from edge defects.
Źródło:: Acta Physica Polonica A; 2011, 119, 5; 595-596
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Optical Absorption and Raman Scattering Studies of Few-Layer Epitaxial Graphene Grown on 4H-SiC Substrates
Autorzy:: Grodecki, K.
Drabińska, A.
Bożek, R.
Wysmołek, A.
Korona, K.
Strupiński, W.
Borysiuk, J.
Stępniewski, R.
Baranowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1791292.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Tr
78.40.Ri
78.30.Na
63.20.dd
63.20.kd
Opis:: Optical absorption and Raman scattering studies of few-layer epitaxial graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) on-axis substrates are presented. Changing the pressure and annealing time, different stages of the graphene formation were achieved. Optical absorption measurements enabled us to establish average number of graphene layers covering the SiC substrate. Raman scattering experiments showed that integrated intensity of the characteristic 2D peak positively correlated with the number of graphene layers deposited on the SiC substrate. The spectral width of the 2D peak was found to decrease with the number of the deposited graphene layers.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 835-837
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Ultrathin NbN Films for Superconducting Single-Photon Detectors
Autorzy:: Słysz, W.
Guziewicz, M.
Borysiewicz, M.
Domagała, J.
Pasternak, I.
Hejduk, K.
Rzodkiewicz, W.
Ratajczak, J.
Bar, J.
Węgrzecki, M.
Grabiec, P.
Grodecki, R.
Węgrzecka, I.
Sobolewski, R.
Powiązania:: https://bibliotekanauki.pl/articles/1504147.pdf
Data publikacji:: 2011-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 74.62.Bf
74.78.-w
81.15.Cd
81.15.Jj
Opis:: We present our research on fabrication and structural and transport characterization of ultrathin superconducting NbN layers deposited on both single-crystal $Al_2O_3$ and Si wafers, and $SiO_2$ and $Si_3N_4$ buffer layers grown directly on Si wafers. The thicknesses of our films varied from 6 nm to 50 nm and they were grown using reactive RF magnetron sputtering on substrates maintained at the temperature 850°C. We have performed extensive morphology characterization of our films using the X-ray diffraction method and atomic force microscopy, and related the results to the type of the substrate used for the film deposition. Our transport measurements showed that even the thinnest, 6 nm thick NbN films had the superconducting critical temperature of 10-12 K, which was increased to 14 K for thicker films.
Źródło:: Acta Physica Polonica A; 2011, 120, 1; 200-203
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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