- Tytuł:
- Luminescence Decay Kinetics in GaN Studied by Frequency Domain Measurements
- Autorzy:
-
Mickevičius, J.
Vitta, P.
Tamulaitis, G.
Žukauskas, A.
Shur, M.
Zhang, J.
Yang, J.
Gaska, R. - Powiązania:
- https://bibliotekanauki.pl/articles/1813195.pdf
- Data publikacji:
- 2008-03
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.20.Jv
78.55.Cr - Opis:
- Carrier dynamics in high-quality GaN epilayer was investigated at two extreme excitation levels. Carrier lifetime under high excitation conditions was estimated by using light-induced transient grating technique. Measurements at extremely low excitation power density were performed by using frequency-domain fluorescence lifetime technique. The study was performed in a wide temperature range from 8 to 300 K. The results revealed the influence of donor-acceptor pair recombination and carrier trapping processes.
- Źródło:
-
Acta Physica Polonica A; 2008, 113, 3; 833-837
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł