Autor: Gao, M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: High-Coercivity FePt Nanoparticle Assemblies Embedded in Oxide-Matrix by Atomic Layer Deposition
Autorzy:: Kong, J.
Li, A.
Gao, M.
Yan, Q.
Wu, D.
Powiązania:: https://bibliotekanauki.pl/articles/1399662.pdf
Data publikacji:: 2013-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Vv
75.75.Cd
75.50.Bb
75.50.Ss
Opis:: Self-assembled face-centered cubic FePt nanoparticles were embedded into the oxide capping layer using the atomic layer deposition technology. The effect of the oxide-matrix layer on the structure, mono-dispersibility, and magnetic properties of the FePt/oxide composite thin films was investigated. Experimental results suggest that the protection of the oxide-matrix capping layer can effectively inhibit the grain growth and particle aggregation, and preserve the ordered domains of the FePt nanoparticles during the L 1_0 ordering transition through annealing. The combination of the atomic layer deposition capping layer and self-assembled FePt nanoparticles provides a new potential approach to fabricate the ultrahigh-density magnetic recording media.
Źródło:: Acta Physica Polonica A; 2013, 123, 2; 173-176
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Spin Glass State in S=3/2 Kagomé Antiferromagnet $Co(N_{3})_{2}(bpg)[(CH_{3})_{2}(NCOH)]_{4/3}$
Autorzy:: Vrábel, P.
Čižmár, E.
Orendáčová, A.
Gao, S.
Orendáč, M.
Powiązania:: https://bibliotekanauki.pl/articles/1368680.pdf
Data publikacji:: 2014-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Ee
75.30.Et
75.10.Nr
Opis:: Specific heat, magnetic susceptibility and magnetization of $Co(N_{3})_{2}(bpg)[(CH_{3})_{2}(NCOH)]_{4/3}$, representing S=3/2 kagomé system are reported. Long-range ordering at 16 K was revealed, however, at lower temperatures slow spin dynamics is still found. The analysis of alternating susceptibility suggests the onset of glassy state. The study of the time dependence of magnetization revealed the existence of more relaxation channels with pronounced different relaxation times. The observed behaviour is consistent with the formation of topological spin glass in which relaxation is governed by both spin and chiral degrees of freedom.
Źródło:: Acta Physica Polonica A; 2014, 126, 1; 266-267
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing
Autorzy:: Prucnal, S.
Turek, M.
Gao, K.
Zhou, S.
Pyszniak, K.
Droździel, A.
Żuk, J.
Skorupa, W.
Powiązania:: https://bibliotekanauki.pl/articles/1400484.pdf
Data publikacji:: 2013-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.30.Fs
78.67.Hc
81.05.Ea
81.07.Ta
81.15.Lm
Opis:: Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in $SiO_2$ and $Si_3N_4$ made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
Źródło:: Acta Physica Polonica A; 2013, 123, 5; 935-938
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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