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Wyszukujesz frazę "Chen, J.Y." wg kryterium: Autor

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    Wyświetlanie 1-10 z 10
    Tytuł:
    Microstructure Evolution of Tungsten-Based ODS Alloys Reinforced with the γ(Ni, Fe) Phase by a Secondary Ball Milling Method
    Autorzy:
    Chen, C.
    Zeng, Y.
    Lee, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1375180.pdf
    Data publikacji:
    2014-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.20.Ev
    81.20.Wk
    81.07.Bc
    81.05.Ni
    Opis:
    In the current study, $W-5Ni-2Fe-Y_2O_3$ model alloys were produced using a high-energy planetary ball mill. The presence of the γ(Ni, Fe) phase is favored with respect to material properties in this alloy. Therefore, a secondary ball milling method was introduced to obtain a fine and uniformly distributed γ(Ni, Fe) phase. Phase development of mechanical alloyed powders was investigated by X-ray diffraction. The results show that the formation of the γ(Ni, Fe) phase was found after 18 h of a pre-milling procedure. A further secondary milling method produced a uniform microstructure with grain refinement. TEM results also show changes in the lattice parameters of the tungsten and γ(Ni, Fe) phase associated with the solid solubility limits in the alloy produced by secondary ball milling.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 4; 907-911
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermodynamic and Electronic Properties of $OsB_2$ from First-Principles Calculations
    Autorzy:
    Cheng, Y.
    Yang, J.
    Wang, Y.
    Ji, G.
    Chen, X.
    Powiązania:
    https://bibliotekanauki.pl/articles/1365243.pdf
    Data publikacji:
    2014-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.15.Mb
    61.50.Ks
    67.25.de
    71.20.-b
    Opis:
    The pressure induced phase transitions of $OsB_2$ from the orthorhombic structure (Orth) to the hexagonal structure (Hex) is investigated by using ab initio plane-wave pseudopotential density functional theory, together with quasi-harmonic Debye model. We find that the pressure-induced phase transition occurs at 2.8 GPa and 12.5 GPa by local density approximation and general gradient approximation, respectively. It is predicted that $OsB_2$ has no phase transition temperature from the Orth structure to the Hex structure. Moreover, the dependences of the relative volume V/$V_0$ on the pressure, thermal expansion coefficient α on the pressure and temperature are also successfully obtained. The electronic properties including energy band, total and partial density of states and electron density difference for two structures are also analyzed. The Mulliken charges and Bond populations for both Orth and Hex structures are also obtained.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 5; 1186-1190
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Compositions of Al-Based Quasicrystals Interpreted by Cluster Formulae
    Autorzy:
    Chen, H.
    Qiang, J.
    Wang, Y.
    Dong, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1372748.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.44.Br
    36.40.-c
    71.20.Lp
    Opis:
    It is known previously that bulk metallic glass compositions satisfy cluster formulae $[cluster](glue atom)_{1, 3}$ of 24 valence electrons as deduced from our cluster-resonance model. In the present work, it is further shown that compositions of Al-based binary and ternary quasicrystals are also explained by 24-electron cluster formulae of the types $[icosahedron](glue atom)_{0, 1}$, where the icosahedral cluster is identified from a corresponding crystalline approximant according to dense atomic packing and cluster isolation criteria, and the glue atom site is either vacant for an icosahedral quasicrystal or equal to one for a decagonal quasicrystal. Ternary quasicrystals are formulated with the same formulae as their basic binary ones but the icosahedron shell sites are substituted by third elements. The 24-electron cluster formulae are then the chemical and electronic structural units of quasicrystals, mimicking the molecular formulae of chemical substances.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 2; 446-448
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Positron Annilation Lifetime and Glass Transition Temperatures in $CO_2$ Sorption Polystyrene
    Autorzy:
    Jean, Y.
    Chen, H.
    Lee, L.
    Yang, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812530.pdf
    Data publikacji:
    2008-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    78.66.Qn
    71.60.+z
    Opis:
    Positron annihilation lifetime spectroscopy was used to measure the free-volume size and distributions as a function of temperature in polystyrene with and without 400 psi $CO_2$ sorption. The transition temperatures in the polystyrene with $CO_2$ sorption obtained from ortho-positronium lifetimes were found to depend on the thermal cycles and a meta-stable state showing a negative thermal expansion coefficient was observed between 53°C and 82°C during the first heating up experiment. The observed $T_g$ in polystyrene with, and without $CO_2$ sorption after annealing from ortho-positronium lifetimes were found to be 86°C and 91°C, which are 5°C higher, and 10°C lower than from the differential scanning calorimetry data, respectively. The observed free-volume variations are discussed in terms of hole expansion, creation, free-volume relaxation, plasticization, and hole filling in amorphous polymers.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 5; 1385-1395
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interface Engineering in Heteroepitaxy
    Autorzy:
    Hong, S. K.
    Chen, Y.
    Ko, H. J.
    Yao, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035571.pdf
    Data publikacji:
    2002
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.-p
    68.35.Dv
    81.15.-z
    81.15.Hi
    81.10.Aj
    Opis:
    We report the importance of interface engineering in heteroepitaxy with examples of plasma-assisted molecular beam epitaxial ZnO growths on (0001) sapphire substrates and on (0001) GaN/sapphire templates, whose interfaces are engineered to improve and to control properties of ZnO films. The growth of rocksalt structure MgO buffer on Al$\text{}_{2}$O$\text{}_{3}$ (0001) is developed for ZnO epitaxy. By employing the MgO buffer layer, the formation of 30$\text{}^{o}$ rotated mixed domains is prohibited and two-dimensional layer-by-layer growth of ZnO on sapphire substrate is achieved. High-resolution X-ray diffraction reveals the superior improvement in a crystal quality of ZnO films with an MgO buffer. Polarity of wurtzite structure ZnO films on Ga-polar GaN/sapphire templates is controlled by changing interface structures. By forming a single crystalline, monoclinic Ga$\text{}_{2}$O$\text{}_{3}$ interfacial layer between GaN and ZnO through O-plasma pre-exposure on the Ga-polar GaN surface, O-polar ZnO films are grown. By forming the ZnO/GaN heterointerface without an interfacial layer through the Zn pre-exposure on the Ga-polar GaN surface, Zn-polar ZnO films are grown.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 4-5; 541-554
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Theoretical Predictions of Lattice Parameters and Mechanical Properties of Pentaerythritol Tetranitrate under the Temperature and Pressure by Molecular Dynamics Simulations
    Autorzy:
    Tan, J.J.
    Hu, C.
    Li, Y.
    Ge, N.
    Chen, T.
    Ji, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033453.pdf
    Data publikacji:
    2017-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    molecular dynamics
    lattice parameter
    equation of state
    elasticity
    mechanical properties
    Opis:
    Molecular dynamics simulations with condensed-phase optimized molecular potentials for atomistic simulation studies force field are performed to investigate the structure, equation of state, and mechanical properties of high energetic material pentaerythritol tetranitrate. The equilibrium structural parameters, pressure-volume relationship and elastic constants at ambient conditions agree excellently with experiments. In addition, fitting the pressure-volume data to the Birch-Murnaghan or Murnaghan equation of state, the bulk modulus B₀ and its first pressure derivative B'₀ are obtained. Moreover, the elastic constants are calculated in the pressure range of 0-10 GPa at room temperature and in the temperature range of 200-400 K at the standard pressure, respectively. By the Voigt-Reuss-Hill approximation, the mechanical properties such as bulk modulus B, shear modulus G, and the Young modulus E are also obtained successfully. The predicted physical properties under temperature and pressure can provide powerful guidelines for the engineering application and further experimental investigations.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 2; 318-323
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application
    Autorzy:
    Miyamura, Y.
    Sekiguchi, T.
    Chen, J.
    Li, J.
    Watanabe, K.
    Kumagai, K.
    Ogura, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198415.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.-a
    61.85.+p
    61.72.Ff
    Opis:
    We demonstrate the imaging of the extended defects in Si materials using a focused ion beam instrument. Since Ga-ion beam has small penetration depth and high channeling character compared with electron beam, the secondary electron signal of focused ion beam is more sensitive to the surface morphology and crystallinity. We have tried to use this secondary electron imaging of focused ion beam for observation of various extended defects in Si materials for photovoltaic and semiconductor devices. As for the texture of multicrystalline Si, some grains are imaged darker than the others. It suggests that the crystal orientation gives different channeling effect on the primary Ga-ion beam, resulting in the different secondary electron yield. The grain boundaries and lineage in multicrystalline Si are shown as bright lines and patterns in the image. Although it may reflect the surface morphologies, these contrasts may be attributed to the channeling contrast due to lattice displacement or distortion. The contrast mechanism of FIB imaging is discussed.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 991-993
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electron Transport and Microwave Noise in MBE- and MOCVD-Grown AlGaN/AlN/GaN
    Autorzy:
    Matulionis, A.
    Liberis, J.
    Eastman, L. F.
    Schaff, W. J.
    Shealy, J. R.
    Chen, X.
    Sun, Y. J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041771.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    63.20.Kr
    72.20.Ht
    73.40.Kp
    Opis:
    Microwave noise temperature, current, and dissipated power were investigated at room temperature in undoped AlGaN/AlN/GaN channels grown by molecular beam epitaxy and metal-organic compound vapour decomposition techniques. Samples with essentially the same electron density (1×10$\text{}^{13}$ cm$\text{}^{-2}$) and low-field mobility (1150 cm$\text{}^{2}$/(V s)) demonstrated considerably different behaviour at high electric fields. The effective hot-phonon lifetime, 300 fs and 1000 fs, respectively, was estimated for molecular beam epitaxy and metal-organic compound vapour decomposition samples. The expected anti-correlation of hot-phonon lifetime and hot-electron drift velocity was confirmed experimentally.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 361-364
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots
    Autorzy:
    Miyamura, Y.
    Chen, J.
    Prakash, R.
    Jiptner, K.
    Harada, H.
    Sekiguchi, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1363535.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.jj
    81.10.Fq
    61.72.Ff
    61.72.Hh
    61.72.Lk
    Opis:
    We have studied the dislocation generation and propagation from the seed crystals during seed cast Si growth. The grown ingot was cut into a vertical wafer, followed by the dislocation imaging using X-ray topography and Secco etching. The dislocation behavior at the seed area was compared with the dislocation generation at the top surface due to the thermal stress during cooling. The dislocations at the seed/crystal interface have propagated on the {111} plane toward top. When the seed surface was not melted sufficiently, the interface defect density became high, but no clear dislocation propagation was recognized. This suggests that the thermal shock at the seed/melt interface was not high enough to propagate dislocations to the growth direction. A certain amount of dislocations has been introduced from the top into the ingot according to the thermal stress. These observations suggest that optimizing the initial growth condition is important to dislocation control.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1024-1026
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Design and the First Test Results of a Fast LTD Stage
    Autorzy:
    Chen, L.
    Zhou, L.
    Zou, W.
    Ren, J.
    Li, Y.
    Wu, S.
    Xie, W.
    Feng, S.
    Deng, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807988.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.70.+p
    52.75.Kq
    84.60.Ve
    Opis:
    Linear transformer driver stages are designed to be used as a primary energy storage in high power pulsed generators. In this report, the design and test results of the linear transformer driver stage prototype that delivers ≈100 kA fast pulse with 133 ns FWHM into a ≈0.87 Ω resistive load are described. This stage consists of 20 (100 kV, 20 nF) storage capacitors that are arranged in 10 identical bricks located evenly around the axis of the stage. Each brick contains two capacitors, a multi-gap switch, and the output connector that transfers the energy to the resistive load. The outer diameter of the stage is ≈1.5 m, at a length of ≈20 cm. The stage is developed to demonstrate the possibility of the fast linear transformer driver technology to create high power pulsed generators.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 1186-1188
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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