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Wyszukujesz frazę "Andreev, V." wg kryterium: Autor

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    Wyświetlanie 1-9 z 9
    Tytuł:
    Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments
    Autorzy:
    Andreev, V.
    Bondarenko, G.
    Maslovsky, V.
    Stolyarov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1381776.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Qv
    73.40.Gk
    Opis:
    The influence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) film in the structures with the two-layer gate dielectric $SiO_2$-PSG under high-field Fowler-Nordheim electron injection can be used for the characteristics modification of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are offered to use for improving the reliability and finding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric films of MOS-structures due to structural changes in the $SiO_2$ film and $Si-SiO_2$ interface.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1371-1373
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment
    Autorzy:
    Andreev, V.
    Bondarenko, G.
    Maslovsky, V.
    Stolyarov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402221.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Qv
    73.40.Gk
    Opis:
    Methods of modification of gate dielectrics of the MOS structures by high-field electron injection and arc plasma jet treatment were studied. It is possible to use them for correction of parameters, decreasing defects number and increasing reliability of MOS devices. It was found that the negative charge accumulated in the film of the phosphorus-silicate glass of the MOS structures with the two-layer gate dielectric SiO₂-phosphorus-silicate glass under the high-field electron injection can be used for modification of devices with the same structures. It is shown that the injection-thermal treatment allows to find and exclude MOS structures with defects of isolation and charge defects. Arc plasma jet treatment was found to improve characteristics of the MOS devices. These treatments increase injection and radiation resistance of the gate dielectric by creating the needed density of electron traps in the bulk of SiO₂ film.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 887-890
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments
    Autorzy:
    Andreev, D.
    Bondarenko, G.
    Andreev, V.
    Maslovsky, V.
    Stolyarov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030209.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Ht
    72.20.Jv
    73.20.At
    73.40.Qv
    73.40.Ty
    77.22.Jp
    77.55.-g
    Opis:
    Methods to modify gate dielectrics of MIS structures by irradiation treatments and high-field electron injection into dielectric are considered. In addition, distinctive features of these methods used to correct parameters of MIS devices are studied. It was found out that negative charge, accumulating in the thin film of phosphosilicate glass (PSG) of the MIS structure having a two-layer gate dielectric SiO_2-PSG under the high-field injection or during the irradiation treatment can be used to correct the threshold voltage to improve the charge stability and raise the voltage of breakdown for the MIS devices. It is proved that the density of electron traps rises with the increasing thickness of the PSG film. In this paper a method to modify electrophysical characteristics of MIS structures by the high-field tunnel injection of electrons into the gate dielectric under the mode of controlled current stress is proposed. The method allows to monitor changing of MIS structure parameters directly during the modification process.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 245-248
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cast Intermetallic Alloys by SHS Under High Gravity
    Autorzy:
    Sanin, V.
    Andreev, D.
    Ikornikov, D.
    Yukhvid, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503724.pdf
    Data publikacji:
    2011-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Bx
    81.05.Mh
    81.20.Ka
    Opis:
    Pilot-scale series of cast Ti-Al, Ti-Al-Nb, $(Ni, Co, Mn)Al_x$, Ni-Cr-Al-Si-C, and Co-V-Al-Si-C alloys were produced by thermit-type SHS under high gravity for their potential use as heat-resistant materials, master alloys, precursors for catalysts, etc.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 2; 331-335
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic Structure in UIrAl
    Autorzy:
    Prokeš, K.
    Prchal, J.
    Sechovský, V.
    Andreev, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813678.pdf
    Data publikacji:
    2008-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.25.+z
    Opis:
    By means of neutron diffraction on a hexagonal UIrAl single crystal we find that this system orders ferromagnetically at low temperatures with magnetic moments of 0.93 (10) $μ_B$ aligned along the c axis. The Curie temperature $T_C$ = 65 (5) K determined from the diffraction experiment is in good agreement with bulk magnetic measurements.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 1; 339-342
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Study of $GdMnO_{3}$ Multiferroic Thin Films
    Autorzy:
    Andreev, N.
    Abramov, N.
    Chichkov, V.
    Pestun, A.
    Sviridova, T.
    Mukovskii, Ya.
    Powiązania:
    https://bibliotekanauki.pl/articles/1550592.pdf
    Data publikacji:
    2010-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.47.Lx
    75.50.Ee
    75.70.Ak
    77.90.+k
    Opis:
    Laboratory technology of $GdMnO_{3}$ thin film fabrication was elaborated. Samples of $GdMnO_{3}$ were fabricated at $NdGaO_{3}$ substrate by magnetron sputtering using off-axis scheme. Structure and phase content of the samples obtained were studied as well as their magnetic properties. The surface topography of the films was observed by atomic force microscopy. Presence of peculiarities at the temperature dependences of magnetic susceptibility points at magnetic phase transitions in $GdMnO_{3}$, which were found before in the single crystals. This fact jointly with X-ray data shows that at definite fabrication regimes one can obtain the multiferroics thin film $GdMnO_{3}$ modification, and the film quality permits to carry out accurate study of the compound in question.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 1; 218-220
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optically Active Si:Er Layers Grown by the Sublimation MBE Method
    Autorzy:
    Stepikhova, M.
    Andreev, A.
    Andreev, B.
    Krasil'nik, Z.
    Shmagin, V.
    Kuznetsov, V.
    Rubtsova, R.
    Jantsch, W.
    Ellmer, H.
    Palmetshofer, L.
    Preier, H.
    Karpov, Yu.
    Piplits, K.
    Hutter, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992203.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    Opis:
    We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentration up to 5×10$\text{}^{18}$ cm$\text{}^{-3}$. The Hall concentration of electrons is about 10% of total Er contents. The mobility is 300-400 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$ at 300 K. All samples exhibit photoluminescence at 1.537 μm up to 100-140 K.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 549-554
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure and Properties of Multilayer Nanostructured Coatings TiN/MoN Depending on Deposition Conditions
    Autorzy:
    Pogrebnjak, A.
    Abadias, G.
    Bondar, O.
    Postolnyi, B.
    Lisovenko, M.
    Kyrychenko, O.
    Andreev, A.
    Beresnev, V.
    Kolesnikov, D.
    Opielak, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1365941.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.46.-w
    62.20.Qp
    62.25.-g
    Opis:
    This work presents the results of TiN/MoN coatings studying. These multilayer nanostructured coatings demonstrate dependence on depositions conditions on nanometer level. The influence of nanosized monolayer thickness on structure changing and properties of nanocomposite multilayer coatings TiN/MoN was found. Multilayer TiN/MoN coatings of the total thickness from 6.8 to 8.2 μm were obtained using C-PVD method. Thicknesses of monolayers were 2, 10, 20, 40 nm. The structure of samples was studied using X-ray diffraction (Bruker D-8 Advance) in Cu $K_{α}$ radiation, high resolution transmission electron microscopy with diffraction CFEI EO Techai F200, scanning electron microscopy with energy dispersive X-ray spectroscopy (JEOL-7001F), and microhardness measurements in dependence on indenter load. Scratch tests (friction, wear, etc.) were also provided using Rockwell-C diamond indenter (CSM Revetest Instruments) with a tip radius of 200 μm. Friction and wear behavior were evaluated using ball-on-plate sliding test on a UMT-3MT tribometer (CETR, USA). With decreasing monolayer thickness the hardness value increases, and the size of nanograins reduces. The values obtained for the friction coefficient of the multilayer system is much smaller than in nanostructured coatings of TiN (nc) or MoN (nc). Annealing showed formation of a (Ti,Mo)N solid solution and small growth of nanocrystals.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1280-1283
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Light Absorption and Photoluminescence in Quantum Dots and Artificial Molecules
    Autorzy:
    Firsov, D.
    Vorobjev, L.
    Panevin, V.
    Fedosov, N.
    Shalygin, V.
    Samsonenko, J.
    Tonkikh, A.
    Cirlin, G.
    Andreev, A.
    Kryzhanovskaya, N.
    Tarasov, I.
    Pikhtin, N.
    Ustinov, V.
    Hanna, S.
    Seilmeier, A.
    Julien, F.
    Zakharov, N.
    Werner, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041673.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    Opis:
    Intraband absorption in n- and p-doped structures with InAs/GaAs quantum dots covered by InGaAs layers is studied both experimentally and theoretically. The absorption cross-section for p-type quantum dots was found to be significantly smaller than that for n-type quantum dots. Interband absorption bleaching under strong interband excitation is found and investigated in undoped quantum dot structures. Structures with artificial molecules were grown. Photoluminescence spectra and transmission electron microscopy images proves the presence of coupled symmetrical quantum dots.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 158-162
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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