Autor: Adam, M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Near Field Optical Microscopy and Spectroscopy with STM and AFM Probes
Autorzy:: Bergossi, O.
Bachelot, R.
Wioland, H.
Wurtz, G.
Laddada, R.
Adam, P. M.
Bijeon, J. L.
Royer, P.
Powiązania:: https://bibliotekanauki.pl/articles/1968764.pdf
Data publikacji:: 1998-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.60.Pb
42.62.Fi
61.16.Ch
68.35.Bs
Opis:: This article deals with a new generation of scanning near field optical microscopes (SNOM), called apertureless SNOM, based on metallic, semi-conductive or dielectric probes. The classification of the apertureless probe among the usual SNOM probes is discussed in the first part. Then, we present the different apertureless SNOM configurations that we develop, with various commercial AFM and home-made tungsten tips, and several illumination and collection modes. Finally, after a preliminary result in near field imaging, we propose a promising application of such microscopes dedicated to the near field fluorescence spectroscopy.
Źródło:: Acta Physica Polonica A; 1998, 93, 2; 393-398
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Ultrafast Phenomena in Freestanding LT-GaAs Devices
Autorzy:: Marso, M.
Mikulics, M.
Adam, R.
Wu, S. Wu.
Zheng, X.
Camara, I.
Siebe, F.
Förster, A.
Güsten, R.
Kordoš, P.
Sobolewski, R.
Powiązania:: https://bibliotekanauki.pl/articles/2041640.pdf
Data publikacji:: 2005-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Jv
72.40.+w
78.30.Fs
85.60.-q
85.60.Gz
Opis:: We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical fields above 200 kV/cm and dark currents below 3×10$\text{}^{-7}$ A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO$\text{}_{2}$ host substrate compared to the native substrate.
Źródło:: Acta Physica Polonica A; 2005, 107, 1; 109-117
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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