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Wyświetlanie 1-15 z 1985
Tytuł:
General Solution to a Bilinear Reduction of the Higher Order Nonlinear Schrödinger Equation
Autorzy:
Goldstein, P. P.
Powiązania:
https://bibliotekanauki.pl/articles/2047168.pdf
Data publikacji:
2006-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.81.Dp
Opis:
The general solution is found to a bilinear reduction of the higher order nonlinear Schrödinger equation. Except for the previously known special cases having multisoliton solutions, the solution has the form of a single envelope solitary wave or wave train for all other values of the parameters. We conjecture that the generic solution is limited to such a narrow class of functions because the bilinear system is overdetermined.
Źródło:
Acta Physica Polonica A; 2006, 110, 6; 769-775
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On Existence of Solitons for the 3rd Harmonic of a Light Beam in Planar Waveguides
Autorzy:
Cao Long, V.
Goldstein, P. P.
Trippenbach, M.
Powiązania:
https://bibliotekanauki.pl/articles/2037293.pdf
Data publikacji:
2004-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.81.Dp
Opis:
We consider equations governing propagation of a monochromatic laser beam coupled to its third harmonic in a nonlinear medium. The system proves to be non-integrable in the sense of Painleve. However it is partially integrable for all values of its parameters. We further check the possibility of solving the equations by the Hirota bilinear method. The system is found to be solvable this way provided that the complex phase of the third harmonics is equal to tripled phase of the fundamental mode (modulo i) and also the amplitudes of these modes are in special proportion. This result corresponds to the previously known condition of existence of the sech soliton solutions. Furthermore, the Hirota scheme is found to work only for exact resonance, i.e. for the ratio of the dispersion coefficients equal to the ratio of frequencies. Finally, all these conditions may only be satisfied for single envelope solitons of the cubic Schrödinger type.
Źródło:
Acta Physica Polonica A; 2004, 105, 5; 437-444
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Intrinsic Luminescence of the Undoped Glasses of (CaO-Ga$\text{}_{2}$O$\text{}_{3}$-GeO$\text{}_{2}$) System
Autorzy:
Padlyak, B. V.
Bordun, O. M.
Buchynskii, P. P.
Powiązania:
https://bibliotekanauki.pl/articles/2010938.pdf
Data publikacji:
1999-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.70.Ce
78.60.-b
76.30.Mi
Opis:
For the first time the intrinsic luminescence in the undoped (CaO-Ga$\text{}_{2}$O$\text{}_{3}$-GeO$\text{}_{2}$) glasses with different composition has been found and investigated in the 80÷300 K temperature range. The new glasses of high chemical purity and optical quality with stoichiometric composition similar to that in calcium-gallium- germanium garnet (Ca$\text{}_{3}$Ga$\text{}_{2}$Ge$\text{}_{3}$O$\text{}_{12}$), trigonal Ca-gallogermanate (Ca$\text{}_{3}$Ga$\text{}_{2}$Ge$\text{}_{4}$O$\text{}_{14}$), and Ca$\text{}_{3}$Ga$\text{}_{2}$O$\text{}_{6}$ crystals were obtained by the high-temperature synthesis method. The luminescence and photoexcitation spectra analysis, supported by EPR spectroscopy data, yields the following results: (i) the UV-excited non-elementary broad emission band with maxima at roughly 500 nm and 420 nm in the (CaO-Ga$\text{}_{2}$O$\text{}_{3}$-GeO$\text{}_{2}$) glasses is due to recombination of ensemble of the transient hole O$\text{}^{-}$ centres; (ii) the emission bands with maxima at nearly 380 and 710 nm, which were distinctly revealed in glasses with the Ca$\text{}_{3}$Ga$\text{}_{2}$Ge$\text{}_{4}$O$\text{}_{14}$ and Ca$\text{}_{3}$Ga$\text{}_{2}$O$\text{}_{6}$ compositions, are assigned to the luminescence of UV-induced electron centres of two different types. Possible models of the luminescence centres in (CaO-Ga$\text{}_{2}$O$\text{}_{3}$-GeO$\text{}_{2}$) glass network are discussed.
Źródło:
Acta Physica Polonica A; 1999, 95, 6; 921-929
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On Existence of Solitons for the Second Harmonic Equations of a Laser Beam
Autorzy:
Cao Long, V.
Goldstein, P. P.
Vu Ngoc, S.
Powiązania:
https://bibliotekanauki.pl/articles/2041595.pdf
Data publikacji:
2004-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.81.Dp
Opis:
We look for conditions of existence of soliton solutions for equations governing propagation of a monochromatic laser beam coupled to its second harmonic in a nonlinear medium. The system proves to be non-integrable in the sense of Painlevé. However it is partially integrable for some values of its parameters. We further check the possibility of solving the equations by the Hirota bilinear method. The system is found to be solvable this way provided that amplitudes of both modes are equal while the complex phase of the second harmonic is equal to the double phase of the fundamental mode (moduloπ). The Hirota scheme is found to work merely for exact resonance, i.e. for the ratio of the dispersion coefficients equal to the ratio of frequencies. Finally, all these conditions may only be satisfied by single envelope travelling waves, in which the envelope has locally the shape of the Weierstrass function.
Źródło:
Acta Physica Polonica A; 2004, 106, 6; 843-852
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant Tunnelling Studies of Chaos in Quantised Systems
Autorzy:
Eaves, L.
Fromhold, T. M.
Wilkinson, P. P.
Sheard, F. W.
Powiązania:
https://bibliotekanauki.pl/articles/1967958.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.My
73.40.Gk
85.30.Mn
05.45.+b
Opis:
This paper gives a brief introductory overview of quantum chaology, with particular reference to recent experimental work involving the use of semiconductor heterostructures. In the presence of a tilted magnetic field, a double-barrier resonant-tunnelling device incorporating a quantum well produces a chaotic stadium for electron motion. The basic properties of this system are described. It is shown how resonant magnetotunnelling spectroscopy provides firm experimental evidence for the effect of scarred wave functions on a physically-measurable property, in this case the measured current-voltage characteristics of the device. The paper concludes with some speculations concerning for the development of this field.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 609-619
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy Spectrum in Quantum Dots of Lead and Tin Chalcogenides Semiconducting Compounds
Autorzy:
Dugaev, V. K.
Litvinov, V. I.
Petrov, P. P.
Mironov, O. A.
Nashchekina, O. N.
Oszwałdowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1923782.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.50.+t
71.90.+q
Opis:
The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calculations of the energy levels as functions of the dot radius are performed. When the anisotropy of the bare energy spectrum is strong, the energy levels are calculated using Fal'kovskii's adiabatic approximation for multiband systems. When the quantum dot material has an inverted band gap with respect to the host, the low-energy states within the fundamental gap are shown to arise.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 797-800
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Silver Surface Structure on Luminescence Characteristics of Europium Doped Polymer Films
Autorzy:
Denisenko, G. A.
Malashkevich, G. E.
Tziganova, T. V.
Galstyan, V. G.
Voitovich, A. P.
Pershukevich, P. P.
Kalosha, I. I.
Bazilev, A. G.
Mchedlishvili, B. V.
Stręk, W.
Oleinikov, V. A.
Powiązania:
https://bibliotekanauki.pl/articles/1945485.pdf
Data publikacji:
1996-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Hx
Opis:
The luminescence characteristics of Eu$\text{}^{3+}$ ions in Eu(NO$\text{}_{3}$)$\text{}_{3}$·6H$\text{}_{2}$O salt contained in polymer films coating the silver metallic surfaces were studied. The surfaces were specially prepared to consist of silver tip arrays with the height of tips in micron and surface density in 10$\text{}^{-8}$ cm$\text{}^{-2}$ ranges. The evaluation of enhancement per one europium ion gave a value 3.5 10$\text{}^{2}$ for one polymer layer coating of tip array silver surface in comparison with the case of glass substrate coating.
Źródło:
Acta Physica Polonica A; 1996, 90, 1; 121-126
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Approximations by Graphs and Emergence of Global Structures
Autorzy:
Exner, P.
Hejčík, P.
Šeba, P.
Powiązania:
https://bibliotekanauki.pl/articles/2044581.pdf
Data publikacji:
2006-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
03.65.Nk
Opis:
We study approximations of billiard systems by lattice graphs. It is demonstrated that under natural assumptions the graph wave functions approximate solutions of the Schrödinger equation with energy rescaled by the billiard dimension. As an example, we analyze a Sinai billiard with attached leads. The results illustrate emergence of global structures in large quantum graphs and offer interesting comparisons with patterns observed in complex networks of a different nature.
Źródło:
Acta Physica Polonica A; 2006, 109, 1; 23-31
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Research on Mechanisms of Electric Conduction in the p-Type Silicon Implanted with $Ne^{+}$ Ions
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1400487.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of $Ne^{+}$ ions (D = $1.5 \times 10^{14} cm^{-2}$, E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of $T_{a}$ = 373 K has been presented, concerning the influence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have confirmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 948-951
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Temperature on Electrical Parameters of GaAs in the Aspect of Applications in Photovoltaics
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1402217.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article describes the results of the research on thermal stability of electrical parameters of n-type gallium arsenide doped with tellurium, defected by ion implantation, measured at the operating temperature ranging from 77 K to 373 K. The aim of the work is to investigate the character of changes in the values of such electrical parameters as resistivity, capacity and loss tangent of the tested GaAs samples, exposed to different thermal conditions. Temperature dependences analyzed in the paper could be taken as a basis to formulate general speculations concerning potential applications of the tested material as a substrate in the process of photovoltaic cells production. The phenomenon of conversion of solar energy into electricity is strongly connected with electrical properties of photovoltaic cell substrate material and its internal structure. Moreover, the efficiency of photoconversion is affected by such factors as charge carrier lifetime distribution and diffusion length in the base material. Therefore, it is necessary to confirm what is the character of the influence of operating temperature on the electrical parameters of GaAs and what modification could be introduced in the material in order to increase the efficiency of photoconversion.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 875-878
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Jump Mechanism of Electric Conduction in n-Type Silicon Implanted with $Ne^{++}$ Neon Ions
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1504000.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the results of research on alternating-current electrical conduction in phosphorus-doped silicon, strongly defected by the implantation of $Ne^{++}$ neon ions. An analysis of electrical properties recorded at the annealing temperature of $T_{a}$ = 373 K and affected by the changes of testing temperature ranging from 253 K to 368 K as well as frequency from 50 Hz to 5 MHz has been discussed. The obtained results have confirmed the occurrence of two conduction mechanisms in strongly defected semiconductors: the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 122-124
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1382904.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the outcome of the research on alternating-current electric conduction in silicon doped with boron, phosphorus, and antimony of resistivities ρ=0.01 Ω cm and ρ=10 Ω cm, strongly defected by the implantation of $Ne^{+}$ ions (D=1.5 × $10^{14}$ $cm^{-2}$, E=100 keV). On the basis of results obtained for samples annealed at the temperature $T_{a}$=598 K and measured at the testing temperature $T_{p}$=298 K and frequency f=1 MHz it was possible to carry out an analysis of mechanisms of electric conduction depending on the type and concentration of dopant. Obtained results confirmed the occurrence of hopping conductivity mechanism in strongly defected semiconductors, which is typical for high frequency values.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1392-1395
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Multiple Exciton Generation in InAs Nanocrystals
Autorzy:
Kowalski, P.
Machnikowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1811947.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Bf
73.22.Dj
Opis:
We study a simple theoretical model of multiple exciton generation by a single high-energy photon absorbed in an InAs nanocrystal. We calculate the Coulomb matrix element for the electron-trion coupling in an InAs nanocrystal and show that due to the resulting coupling between single-pair and two-pair states the latter becomes weakly optically active.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1187-1192
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Model of Nonlinear Operation of a Waveguide Laser with Gaussian Output Mirror
Autorzy:
Witoński, P.
Szczepański, P.
Powiązania:
https://bibliotekanauki.pl/articles/2008298.pdf
Data publikacji:
1999-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.60.Da
42.60.Lh
Opis:
We present an approximate analysis of the nonlinear operation of the hollow-waveguide laser with Gaussian reflectivity profile output mirror, including gain saturation and longitudinal- as well as transverse-field distribution of the laser mode. The model presented is general and can be applied to the study of an arbitrary configuration of the waveguide laser. In particular, the laser characteristics show the influence of the position of the output mirror and the Gaussian mirror parameter on the power efficiency of the laser system. It was shown that optimal position of the output mirror, which provides maximal power efficiency (with other parameters constant), depends on output power level and the mirror reflectivity coefficient.
Źródło:
Acta Physica Polonica A; 1999, 95, 5; 843-858
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interlayer Coupling in EuS-Based Superlattices (Dependence on the Energy Structure of Non-Magnetic Layer)
Autorzy:
Sankowski, P.
Kacman, P.
Powiązania:
https://bibliotekanauki.pl/articles/2036031.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Ak
68.65.Cd
Opis:
The interlayer coupling between ferromagnetic EuS layers separated by spacer layers of diamagnetic insulators, YbSe and SrS, is studied within a 3D tight-binding model. The dependencies of the coupling strength on the energy structure of the spacer, on strains resulting from the lattice mismatch between the superlattice constituents, as well as on an applied hydrostatic pressure and lattice deformations, are presented. The sign and the range of the obtained coupling agree with the behavior of magnetic correlations observed recently in neutron reflectivity spectra of EuS/YbSe superlattices.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 621-628
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 1985

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