Wszystkie pola: sitarek, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures
Autorzy:: Jezierski, K.
Sitarek, P.
Misiewicz, J.
Panek, M.
Ściana, B.
Korbutowicz, R.
Tłaczała, M.
Powiązania:: https://bibliotekanauki.pl/articles/1933782.pdf
Data publikacji:: 1995-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.-a
71.35.+z
Opis:: Photoreflectance spectra were measured at room temperature for energies in the vicinity of the E$\text{}_{0}$ critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Depending on the doping concentration the existence of two photoreflectance subsignals was observed; the first one arises from the surface space charge region while the second one from the interface region. The decomposition of photoreflectance spectrum into surface and interface subsignals was based on the photoreflectance measurements carried out for different wavelengths of the laser pump beam.
Źródło:: Acta Physica Polonica A; 1995, 88, 4; 751-754
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Light-Induced Modification of 3D Photonic Band Structure Detected by Means of PhotoreflectionD
Autorzy:: Kapitonov, A. M.
Kachan, S. M.
Ponyavina, A. N.
Gaponenko, S. V.
Bogomolov, V. N.
Prokofiev, A. V.
Sitarek, P.
Misiewicz, J.
Powiązania:: https://bibliotekanauki.pl/articles/1995551.pdf
Data publikacji:: 1999-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.70.Qs
42.70.Gi
Opis:: Porous synthetic opal possessing a three-dimensional photonic band structure of semimetallic type was impregnated with polycrystalline CdS. The photonic stop band in (111) direction was examined by means of photoreflection technique. Under cw laser excitation of semiconductor inclusions the reflectance of the system changes indicating a modification of photonic band structure. A possible mechanism is discussed. Numerical simulations within the framework of quasicrystalline approximation are given.
Źródło:: Acta Physica Polonica A; 1999, 95, 3; 335-342
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Optical Transitions between Confined and Unconfined States in p-Type Asymmetric GaAs/InGaAs/AlGaAs QW Structures
Autorzy:: Sitarek, P.
Ryczko, K.
Misiewicz, J.
Reuter, D.
Wieck, A.
Powiązania:: https://bibliotekanauki.pl/articles/1492827.pdf
Data publikacji:: 2011-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.Pz
78.66.Fd
78.67.De
Opis:: We present contactless surface photovoltage spectroscopy and photoreflectance studies of 10 nm wide, p-type doped asymmetric GaAs/InGaAs/AlGaAs quantum well structures. The MBE grown structures differ in spacer thickness between the quantum well and the reservoir of holes. The doping causes that quantum well is placed in electric field. The surface photovoltage spectroscopy measurements gave us detailed information about the optical transitions between confined states and between confined and unconfined states. The comparison of experimental and numerical analysis allows us to identify all features present in the surface photovoltage spectroscopy and photoreflectance spectra. It has been found that spacer layer thickness has significant influence on surface photovoltage spectroscopy spectra.
Źródło:: Acta Physica Polonica A; 2011, 120, 5; 849-851
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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