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Wyszukujesz frazę "holes" wg kryterium: Wszystkie pola

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    Wyświetlanie 1-10 z 10
    Tytuł:
    Disentanglement and Black Holes: Information Problem
    Autorzy:
    Radosz, A.
    Gusin, P.
    Roszak, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033709.pdf
    Data publikacji:
    2017-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    04.70.Dy
    03.65.Ud
    Opis:
    One of the possible ways of formulation of an information loss paradox refers to an entanglement of the two particles created in a vicinity of an event horizon. Evolution of the entangled particles and an interaction with their own environments should lead to a decay of the entanglement. However obvious, such a perspective appears to be too naive in this case.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 1; 132-134
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Semiconductor Spintronics: Role of the Valence-Band Holes
    Autorzy:
    Dargys, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041626.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Jv
    73.40.Gk
    78.55.-m
    79.90.+b
    Opis:
    Two aspects related to valence-band hole spin are considered: spin surfaces in p-type semiconductors and flipping of the hole spin by an ultrashort electric field pulse. It is shown that heavy, light, and split-off holes have different spin surfaces. In general, the shape of the surface in real semiconductors may depend on the hole wave vector direction and magnitude. The concept of spin surface is used to explain very strong anisotropy of hole spin injection efficiency observed recently in ferromagnetic-semiconductor structures and in optimizing ultrafast spin switching. It was shown that, of all spin flipping mechanisms, the most effective one is associated with hole transfer between different spin surfaces in high electric fields. The less effective mechanisms are related to valence band warping and nonparabolicity. Examples of the hole spin flipping dynamics and the discussion on ultrafast control of spin in semiconductors by π-type electrical pulses are presented.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 46-55
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nonlinear Zeeman Splitting of Holes in Doped GaAs Heterostructures
    Autorzy:
    Kubisa, M.
    Ryczko, K.
    Jadczak, J.
    Bryja, L.
    Misiewicz, J.
    Potemski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047934.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.75.-c
    Opis:
    Polarization-resolved photoluminescence from two-dimensional GaAs/GaAlAs heterostructures doped with acceptors was studied in high magnetic fields. Measurements were carried out in low temperatures up to 2 K and magnetic field up to 21 T. Experiments performed in the Faraday configuration enabled to resolve hole states with different spin orientation. We observed a nonlinear behavior of valence-band g factor in strong magnetic fields. To explain obtained results, a detailed theoretical calculation was carried out based on the Luttinger model for valence-band states. We examined the spin splitting of hole levels under the influence of both external magnetic field and built-in electric field existing in doped heterostructures. Changes of hole g factor with the width of the structure and the density of two-dimensional carriers are discussed.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 609-611
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Application of Intrinsic Quantized Flux of Electrons and Holes in Josephson Junctions
    Autorzy:
    Saglam, Z.
    Boyacioglu, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1029958.pdf
    Data publikacji:
    2018-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    intrinsic flux of electron and hole
    quantum flux
    superconductivity
    Josephson junction
    Opis:
    The aim of this study is to investigate the influence of spin degrees of freedom on the flux quantization in a 2D Josephson junction. One of the most important properties of the Josephson structures is the total quantum flux which can be related to the phase difference across the junction. For example the sign of the phase difference controls the direction of the Josephson current while the magnitude of the phase difference affect the critical current itself. So far in literature to calculate the total quantum flux in the Josephson structures only the flux of the external magnetic field (and hence the external vector potential) has been considered but the intrinsic quantum flux of correlated electrons and holes have not been taken into account. We have recently calculated the intrinsic quantized magnetic flux of electrons and holes. We showed that depending on the spin orientations, the spin contribution to the quantized intrinsic flux of a correlated electron is equal to (Φ_{int}=±(g*Φ_{0})/2). Here g* is the effective Landé g-factor and Φ_{0} is the unit of flux (fluxoid). In the present study we calculate the above mentioned phase differences across the junction considering the intrinsic quantum flux of electrons and holes. For electrons the additional flux contribution will be: ΔΦ_{int}=±(g_{e}*Φ_{0})/2 and for holes, the related contribution will be: ΔΦ_{int}=±(g_{h}*Φ_{0})/2. We show that, for both charge carriers, the effective Landé g-factors (g_{e}*,g_{h}*), take only even integer values such as (0,2,4,...). The present calculations can be easily extended to the intrinsic Josephson junctions as well. We found that flux contribution to the total flux due to spin is very important and it is in fact ±Φ_{0}/2 depending on the spin up and down cases or the ground state.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 5; 1129-1132
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Rashba Spin-Orbit Coupling on the Spin Polarization of Holes in Two-Dimensional GaMnAs Magnetic Semiconductors
    Autorzy:
    Stagraczyński, S.
    Dugaev, V.
    Berakdar, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1032428.pdf
    Data publikacji:
    2017-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    Magnetization
    Rashba spin-orbit coupling
    Opis:
    We consider the effect of the Rashba spin-orbital coupling in two-dimensional GaAs semiconductor heavily doped with Mn, on the spin polarization of holes. Due to the strong internal spin-orbit interaction in GaAs, the spin of a hole is not a good quantum number but the hole in some energy state has a certain mean value of spin, which can be strongly affected by the Rashba spin-orbital interaction related to the substrate for 2D material.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 1; 189-192
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electric Field Enhanced Emission of Holes from the Double Donor Level of the EL2 Defect in GaAs
    Autorzy:
    Mąkosa, A.
    Wosiński, T.
    Szkiełko, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923805.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    61.70.-r
    Opis:
    Strong electric-field enhancement of the thermal emission rate of holes from the doubly ionized charge state of the EL2 defect was revealed with the deep-level transient spectroscopy in p-type GaAs and analyzed in a model of phonon-assisted tunnel effect. Similar dependence observed for the electric field directions parallel to three main crystallographic axes suggests tetrahedral symmetry of the defect which is consistent with its identification as the arsenic antisite.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 813-816
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermoelectric Power of $MgB_2$ Single Crystals Doped with Holes and Electrons
    Autorzy:
    Oganisian, K.
    Rogacki, K.
    Sulkowski, C.
    Zhigadlo, N.
    Katrych, S.
    Karpinski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812320.pdf
    Data publikacji:
    2008-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.25.Fy
    74.70.Ad
    74.62.Dh
    Opis:
    The thermoelectric power of $MgB_2$ single crystals, non-substituted, single-substituted with C, and co-substituted with C and Li, was investigated in the temperature range from 10 to 300 K. Both the in-plane $(S_ab)$ and the out-of-plane $(S_c)$ thermoelectric powers are positive for non-substituted crystals and both $S_{ab}$ and $S_c$ change a sign for crystals doped with electrons when C is substituted for B in the amount larger than 6 at.%. The substitution of C, which supplies electrons mainly into the σ band, reduces the thermoelectric power anisotropy, most likely by increasing the interband scattering. When Li is additionally co-substituted for Mg, $S_ab$ remains unchanged but $S_c$ increases substantially. The Li substitution donates holes into the π band rather than into the σ band and in this way modifies the π band properties, including the possible increase in the intraband scattering.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 1; 191-195
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Shake-Up Processes in Photoluminescence of Two-Dimensional Holes in a High Magnetic Field
    Autorzy:
    Wójs, A.
    Bryja, L.
    Misiewicz, J.
    Potemski, M.
    Reuter, D.
    Wieck, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047047.pdf
    Data publikacji:
    2006-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.Cc
    71.35.Ji
    73.21.Fg
    Opis:
    Recombination of excitons and positive trions is studied by two-beam photoluminescence of a two-dimensional hole gas in a high magnetic field. The singlet, dark-triplet and bright-triplet states of a free trion are resolved, and their binding energies are determined. Recombination of acceptor-bound trions is also detected, including a low-energy cyclotron replica, corresponding to a hole shake-up process. Identification of all these different transitions was possible by analysis of optical selection rules and the comparison of experimental spectra with realistic numerical calculations.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 3; 429-435
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interacting Electrons and Holes in Quasi-2D Quantum Dots in Strong Magnetic Fields
    Autorzy:
    Hawrylak, P.
    Sheng, W.
    Cheng, S.-J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038355.pdf
    Data publikacji:
    2004-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.-b
    83.35.-p
    73.21.La
    71.35.Ji
    78.67.Hc
    Opis:
    Theory of optical properties of interacting electrons and holes in quasi-2D quantum dots in strong magnetic fields is discussed. In two dimensions and the lowest Landau level, hidden symmetries control the interaction of the interacting system with light. By confining electrons and holes into quantum dots hidden symmetries can be removed and the excitation spectrum of electrons and excitons can be observed. We discuss a theory electronic and of excitonic quantum Hall droplets at a filling factorν=2. For an excitonic quantum Hall droplet the characteristic emission spectra are predicted to be related to the total spin of electron and hole configurations. For the electronic droplet the excitation spectrum of the droplet can be mapped out by measuring the emission for increasing number of electrons.
    Źródło:
    Acta Physica Polonica A; 2004, 106, 3; 403-412
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures
    Autorzy:
    Grigelionis, I.
    Fobelets, K.
    Vincent, B.
    Mitard, J.
    De Jaeger, B.
    Simoen, E.
    Hoffman, T.
    Yavorskiy, D.
    Łusakowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492960.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.My
    85.30.Tv
    Opis:
    We investigated magnetoresistance of p-type Ge-on-Si metal-oxide-semiconductor field-effect transistors in order to determine the hole mobility μ as a function of the gate polarization $(V_{G})$. Measurements were carried out at 4.2 K and magnetic fields up to 10 T. The signal measured was proportional to the derivative of the transistor resistance with respect to $V_{G}$. To determine the hole mobility we developed a method to treat the measured signal which is based on a numerical solution of a differential equation resulting from the theoretical description of the experimental procedure. As a result, we obtained a non-monotonic $μ(V_{G})$ dependence which is a characteristic feature of the carrier transport in gated two-dimensional structures.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 933-935
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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