Wszystkie pola: Zhou, S. M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Embedded Solitons and Conservation Law with $χ^{(2)}$ and $χ^{(3)}$ Nonlinear Susceptibilities
Autorzy:: Savescu, M.
Kara, A.
Kumar, S.
Krishnan, E.
Zaka Ullah, M.
Moshokoa, S.
Zhou, Qin
Biswas, A.
Powiązania:: https://bibliotekanauki.pl/articles/1398312.pdf
Data publikacji:: 2017-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: solitons
χ^{(2)}
conservation laws
Opis:: This paper studies embedded solitons that are confined to continuous spectrum, with $χ^{(2)}$ and $χ^{(3)}$ nonlinear susceptibilities. Bright and singular soliton solutions are obtained by the method of undetermined coefficients. Subsequently, the Lie symmetry analysis and mapping method retrieves additional solutions to the model such as shock waves, singular solitons, cnoidal waves, and several others. Finally, a conservation law for this model is secured through the Lie symmetry analysis.
Źródło:: Acta Physica Polonica A; 2017, 131, 2; 297-303
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer
Autorzy:: Prucnal, S.
Jiao, F.
Reichel, D.
Zhao, K.
Cornelius, S.
Turek, M.
Pyszniak, K.
Drozdziel, A.
Skorupa, W.
Helm, M.
Zhou, S.
Powiązania:: https://bibliotekanauki.pl/articles/1199248.pdf
Data publikacji:: 2014-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 88.40.jn
61.72.Cc
78.55.Hx
Opis:: Copper indium gallium diselenide (CIGS) becomes more significant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the final efficiency of the solar cell. An influence of the post-deposition millisecond range flash lamp annealing on the optical and microstructural properties of the CIGS films was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that flash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after flash lamp annealing the degradation of the photoluminescence is significantly suppressed and the absolute absorption in the wavelength range of 200-1200 nm increases by 25%.
Źródło:: Acta Physica Polonica A; 2014, 125, 6; 1404-1407
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing
Autorzy:: Prucnal, S.
Turek, M.
Gao, K.
Zhou, S.
Pyszniak, K.
Droździel, A.
Żuk, J.
Skorupa, W.
Powiązania:: https://bibliotekanauki.pl/articles/1400484.pdf
Data publikacji:: 2013-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.30.Fs
78.67.Hc
81.05.Ea
81.07.Ta
81.15.Lm
Opis:: Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in $SiO_2$ and $Si_3N_4$ made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
Źródło:: Acta Physica Polonica A; 2013, 123, 5; 935-938
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Charge Carrier Dynamics in $Ga_{1-x}Mn_{x}As$ Studied by Resistance Noise Spectroscopy
Autorzy:: Lonsky, M.
Teschabai-Oglu, J.
Pierz, K.
Sievers, S.
Schumacher, H.
Yuan, Y.
Böttger, R.
Zhou, S.
Müller, J.
Powiązania:: https://bibliotekanauki.pl/articles/1397018.pdf
Data publikacji:: 2018-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Pp
73.50.Td
73.50.-h
73.61.-r
64.60.ah
61.72.-y
Opis:: We report on electronic transport measurements of the magnetic semiconductor Ga_{1-x}Mn_{x}As, whereby the defect landscape in various metallic thin films (x=6%) was tuned by He-ion irradiation. Changes in the distribution of activation energies, which strongly determine the low-frequency 1/f-type resistance noise characteristics, were observed after irradiation and can be explained by deep-level traps residing in the As sublattice. Various other kinds of crystalline defects such as, for instance, Mn interstitials, which possibly form nanoscale magnetic clusters with a fluctuating spin orientation, also contribute to the 1/f noise and can give rise to random telegraph signals, which were observed in films with x=7%. In addition, we neither find evidence for a magnetic polaron percolation nor any features in the noise near the Curie temperature.
Źródło:: Acta Physica Polonica A; 2018, 133, 3; 520-522
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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